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1. 发明授权

US06805808B2 Method for separating chips from diamond wafer 失效
标题翻译：从金刚石晶片分离芯片的方法
公开(公告)号：US06805808B2
公开(公告)日：2004-10-19
申请号：US10129925
申请日：2002-05-13
申请人： Satoshi Fujii , Noboru Gotou , Tomoki Uemura , Toshiaki Saka , Katsuhiro Itakura
发明人： Satoshi Fujii , Noboru Gotou , Tomoki Uemura , Toshiaki Saka , Katsuhiro Itakura
IPC分类号： H01L21301
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/30 , B23K2103/50
摘要： A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.

2. 发明授权

US06713941B2 Surface acoustic wave element 有权
标题翻译：表面声波元件
公开(公告)号：US06713941B2
公开(公告)日：2004-03-30
申请号：US10204454
申请日：2002-08-21
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.
摘要翻译：一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波（SAW）器件。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 3.2pi（tz /λ）和kh2 = 3.2pi（ts / lambda），其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。

3. 发明授权

US06984918B1 Saw device 失效
标题翻译：锯装置
公开(公告)号：US06984918B1
公开(公告)日：2006-01-10
申请号：US10089804
申请日：2000-10-04
申请人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L41/04 , H03H9/145
CPC分类号： H03H9/02582 , H03H9/02574
摘要： The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.
摘要翻译：本发明提供一种表面声波装置，其包括金刚石，其工作频率在几百MHz至几十GHz的范围内，并且能够在高频下操作。本发明的声表面波器件包括金刚石层或基底层和金刚石层，ZnO压电层，叉指式换能器和短路电极层，其特征在于（2pi.H /λ< M 3）在3.0至10.0的范围内，其中ZnO层的厚度为H，声表面波的波长为λM。

4. 发明授权

US06469416B1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06469416B1
公开(公告)日：2002-10-22
申请号：US09959954
申请日：2001-11-13
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/02582
摘要： A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
摘要翻译：提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波（SAW）装置。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 5.2pi（tz / lambd）和kh2 = 5.2pi（ts / lambd），其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。

5. 发明申请

US20050089700A1 Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction 审中-公开
标题翻译：焊接膜制造方法，配有焊料膜的散热器，以及半导体器件和散热器结
公开(公告)号：US20050089700A1
公开(公告)日：2005-04-28
申请号：US10709305
申请日：2004-04-28
申请人： Katsuhiro Itakura , Yukifumi Chiba , Satoshi Fujii
发明人： Katsuhiro Itakura , Yukifumi Chiba , Satoshi Fujii
IPC分类号： H01L21/52 , B23K35/00 , B23K35/02 , B23K35/14 , B23K35/26 , C23C30/00 , H01L23/373 , H01L23/40 , H01L23/488 , H01S5/02 , C23C16/00 , B32B15/04
CPC分类号： H01L23/488 , B23K35/001 , B23K35/0238 , B23K35/262 , B23K2101/40 , H01L23/3736 , H01L2924/0002 , H01S5/02272 , Y10T428/31678 , H01L2924/00
摘要： The solder film manufacturing method has a step for laminating a plurality of unit layers, each unit layer formed by laminating a plurality of layers including layers of only Zn, Bi or Sn, or layers of alloys of two of the metals Zn, Bi and Sn. This manufacturing method also preferably also has a step for forming an Sn layer as the top surface layer. A heat sink has a solder film manufactured by this process. A solder junction connects a semiconductor device characterized by having a semiconductor element mounted on this heat sink with a heat sink having this solder film.
摘要翻译：焊锡膜的制造方法具有层叠多个单位层的步骤，每个单位层通过层叠多个层而形成，所述多个层包括仅Zn，Bi或Sn的两层或两种金属Zn，Bi和Sn的合金层。该制造方法还优选还具有形成作为顶表面层的Sn层的步骤。散热器具有通过该工艺制造的焊料膜。焊接点连接半导体器件，其特征在于具有安装在该散热器上的半导体元件和具有该焊料膜的散热器。

6. 发明授权

US06642813B1 Surface acoustic wave device utilizing a ZnO layer and a diamond layer 有权
标题翻译：使用ZnO层和金刚石层的声表面波器件
公开(公告)号：US06642813B1
公开(公告)日：2003-11-04
申请号：US10089816
申请日：2002-04-04
申请人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H03H964
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.
摘要翻译：具有金刚石的表面声波（SAW）器件，其具有高效率，并且可以在高频，特别是9.5至10.5GHz的频率下操作。 SAW器件包括单独形成或形成在衬底上的金刚石层，ZnO压电层，叉指式换能器（IDT）和根据需要的短路电极。 SAW器件具有其中ZnO层的厚度，SAW的谐波的波长和IDT的线宽落在特定范围内的结构。利用这种结构，通过利用SAW的第三或第五谐波，在10GHz频带的高频范围内获得大的机电耦合系数。

7. 发明申请

US20060057404A9 Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction 审中-公开
标题翻译：焊接膜制造方法，配有焊料膜的散热器，以及半导体器件和散热器结
公开(公告)号：US20060057404A9
公开(公告)日：2006-03-16
申请号：US10709305
申请日：2004-04-28
申请人： Katsuhiro Itakura , Yukifumi Chiba , Satoshi Fujii
发明人： Katsuhiro Itakura , Yukifumi Chiba , Satoshi Fujii
IPC分类号： C23C16/00 , B32B15/04
CPC分类号： H01L23/488 , B23K35/001 , B23K35/0238 , B23K35/262 , B23K2101/40 , H01L23/3736 , H01L2924/0002 , H01S5/02272 , Y10T428/31678 , H01L2924/00
摘要： The solder film manufacturing method has a step for laminating a plurality of unit layers, each unit layer formed by laminating a plurality of layers including layers of only Zn, Bi or Sn, or layers of alloys of two of the metals Zn, Bi and Sn. This manufacturing method also preferably also has a step for forming an Sn layer as the top surface layer. A heat sink has a solder film manufactured by this process. A solder junction connects a semiconductor device characterized by having a semiconductor element mounted on this heat sink with a heat sink having this solder film.
摘要翻译：焊锡膜的制造方法具有层叠多个单位层的步骤，每个单位层通过层叠多个层而形成，所述多个层包括仅Zn，Bi或Sn的两层或两种金属Zn，Bi和Sn的合金层。该制造方法还优选还具有形成作为顶表面层的Sn层的步骤。散热器具有通过该工艺制造的焊料膜。焊接点连接半导体器件，其特征在于具有安装在该散热器上的半导体元件和具有该焊料膜的散热器。

8. 发明授权

US07576303B2 Wafer holder, and wafer prober provided therewith 有权
标题翻译：晶片支架，以及提供的晶圆探针
公开(公告)号：US07576303B2
公开(公告)日：2009-08-18
申请号：US11701417
申请日：2007-02-02
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： G01R31/2865 , H01L21/68757
摘要： A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity K1 and a Young's modulus Y1; the support member has a thermal conductivity K2 and a Young's modulus Y2; and the stand has a thermal conductivity K3 and a Young's modulus Y3. K1>K2 and K1>K3; and Y3>Y1 and Y3>Y2.
摘要翻译：提供了具有高刚性和增强的隔热效果的晶片保持器，其允许提高位置精度和加热均匀性，快速加热和冷却的芯片，以及降低的制造成本，以及晶片探测器装置，其上安装晶片保持架。本发明的晶片保持器包括用于安装晶片的卡盘顶部，用于支撑卡盘顶部的支撑构件和用于支撑支撑构件的支架。卡盘顶部具有导热系数K1和杨氏模量Y1; 支撑构件具有热传导率K2和杨氏模量Y2; 并且支架具有热导率K3和杨氏模量Y3。 K1> K2和K1> K3; Y3> Y1和Y3> Y2。

9. 发明申请

US20090045829A1 Wafer holder for wafer prober and wafer prober equipped with same 审中-公开
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US20090045829A1
公开(公告)日：2009-02-19
申请号：US11496019
申请日：2006-07-31
申请人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/26 , H05B3/68
CPC分类号： G01R31/2865 , G01R31/2875
摘要： It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith.A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.
摘要翻译：本发明的目的是提供一种高度刚性的晶片探针晶片保持器，并且增加隔热效果，从而提高位置精度，热均匀性以及芯片温度升高和冷却速度，以及晶片探测器装备的装置。本发明的晶片保持器包括安装晶片的卡盘顶部和支撑卡盘顶部的支撑构件，其中设置有限制构件，该限制构件覆盖卡盘顶部和支撑构件之间的界面。通过用限制构件覆盖卡盘顶部和支撑构件之间的间隙，可以通过防止外部空气通过间隙流入支撑构件而提高隔热效果，并且如果冷却至温度低于室温。

10. 发明申请

US20070029740A1 Body for keeping a wafer, method of manufacturing the same and device using the same 审中-公开
标题翻译：用于保持晶片的本体，其制造方法以及使用其的装置
公开(公告)号：US20070029740A1
公开(公告)日：2007-02-08
申请号：US11482101
申请日：2006-07-07
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata , Akira Mikumo
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata , Akira Mikumo
IPC分类号： B23B31/30
CPC分类号： H01L21/67109 , H01L21/67103 , Y10T279/11
摘要： A wafer holding body for placing a semiconductor wafer, a method of manufacturing the same, and an device using the wafer holding body are provided, wherein a channel is formed in the wafer holding body.
摘要翻译：提供了一种用于放置半导体晶片的晶片保持体，其制造方法和使用该晶片保持体的器件，其中在晶片保持体中形成沟道。

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