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    • 2. 发明授权
    • Magnetic storage device using ferromagnetic tunnel junction element
    • 使用铁磁隧道结元件的磁存储装置
    • US07542335B2
    • 2009-06-02
    • US10530271
    • 2003-09-18
    • Hiroshi YoshiharaKatsutoshi MoriyamaHironobu MoriNobumichi Okazaki
    • Hiroshi YoshiharaKatsutoshi MoriyamaHironobu MoriNobumichi Okazaki
    • G11C11/14
    • H01L27/222
    • It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data.In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
    • 提供互补式磁存储装置的任务是通过精确地执行写入存储数据来提高可靠性。 因此,在本发明中,在第一铁磁隧道结元件和第二铁磁隧道结元件中分别存储相互相反的存储数据的互补型磁存储器件中,第一铁磁隧道结元件和第二铁磁 隧道结元件相邻地形成在半导体衬底上,第一写入线如线圈缠绕在第一铁磁隧道结元件周围,同时第二写入线缠绕在第二铁磁隧道结元件上,如线圈,另外, 第一写入线的卷绕方向和第二写入线的卷绕方向相反。
    • 4. 发明授权
    • Magnetic storage apparatus using ferromagnetic tunnel junction device
    • 磁存储装置采用铁磁隧道连接装置
    • US07239539B2
    • 2007-07-03
    • US10508259
    • 2003-03-17
    • Katsutoshi MoriyamaHironobu Mori
    • Katsutoshi MoriyamaHironobu Mori
    • G11C11/00
    • G11C11/15G11C11/16
    • A magnetic storage apparatus capable of performing storage data to a ferromagnetic tunnel junction device surely and with a low electric consumption. In the present invention, a magnetic storage apparatus using a ferromagnetic tunnel junction device configured so as to perform writing of storage data into the ferromagnetic tunnel junction device by applying writing magnetic force on the ferromagnetic tunnel junction device and to perform reading of storage data written in the ferromagnetic tunnel junction device by detecting a resistance value of the ferromagnetic tunnel junction device is provided, wherein it is configured to be able to change the magnitude of the writing magnetic force.
    • 一种磁性存储装置,其能够确实地以低的电力消耗向铁磁隧道结装置执行存储数据。 在本发明中,使用铁磁隧道结装置的磁存储装置,通过在铁磁隧道结装置上施加写入磁力,将存储数据写入到铁磁隧道结装置中,并执行写入的存储数据的读取, 提供了通过检测铁磁隧道结装置的电阻值的铁磁隧道结装置,其中它被配置为能够改变写入磁力的大小。
    • 7. 发明授权
    • Composite storage circuit and semiconductor device having the same
    • 复合存储电路及具有相同的半导体器件
    • US07385845B2
    • 2008-06-10
    • US10503442
    • 2003-02-07
    • Katsutoshi MoriyamaHironobu MoriHisanobu Tsukazaki
    • Katsutoshi MoriyamaHironobu MoriHisanobu Tsukazaki
    • G11C16/04
    • G11C11/005G11C14/00
    • The object of the present invention is to provide a composite storage circuit capable of executing a writing operation and reading operation at high speed, and as the result of that, a semiconductor apparatus capable of realizing an instant-on function and an instant-off function is provided. The composite storage circuit is constituted of a volatile storage circuit and a non-volatile storage circuit connected in parallel, and the same information as storage information in the volatile storage circuit is stored in the non-volatile storage circuit. Moreover, as a power supply to the volatile storage circuit decreases, storage information in the volatile storage circuit is written in the non-volatile storage circuit. Further, after a power failure or a decreased power supply, storage information from the non-volatile storage circuit is returned to the volatile storage circuit upon restarting power feeding. Further, a semiconductor apparatus is constituted by having the composite storage circuit described above.
    • 本发明的目的是提供一种能够高速执行写入操作和读取操作的复合存储电路,其结果是能够实现瞬时启动功能和瞬时功能的半导体装置 被提供。 复合存储电路由并联连接的易失性存储电路和非易失性存储电路构成,并且与易失性存储电路中的存储信息相同的信息存储在非易失性存储电路中。 此外,随着向易失性存储电路的电源减少,易失性存储电路中的存储信息被写入非易失性存储电路中。 此外,在电源故障或电力供应减少之后,在重新启动供电时,来自非易失性存储电路的存储信息返回到易失性存储电路。 此外,通过具有上述复合存储电路构成半导体装置。
    • 10. 发明申请
    • GAME DEVICE, CONTROL METHOD FOR GAME DEVICE, PROGRAM, AND INFORMATION STORAGE MEDIUM
    • 游戏设备,游戏设备的控制方法,程序和信息存储介质
    • US20100240428A1
    • 2010-09-23
    • US12740733
    • 2008-09-19
    • Hironobu Mori
    • Hironobu Mori
    • A63F9/24
    • A63F13/812A63F13/10A63F13/2145A63F13/26A63F13/56A63F13/577A63F2300/1075A63F2300/64A63F2300/643A63F2300/6607A63F2300/8011
    • TO provide a game device which can allow a user to feel that an operation subject character loses its balance in a case where the operation subject character hits a moving object in such a state where the operation subject player character is located at a position comparatively far from the moving object in a sport game in which the operation subject character hits the moving object according to a predetermined operation by the user. Determination means (92a) determines whether or not the moving object is positioned in a decision area which is set based on a position of the operation subject character in a case where the predetermined operation is performed. Operation-subject-character control means (92b) causes the operation subject character to hit the moving object in a case where it is determined that the moving object is positioned in the decision area. Decision area control means (92c) controls a size of the decision area after the moving object is hit, based on a position of the moving object at a reference time based on at least one of a time at which the predetermined operation is performed and a time at which the operation subject character hits the moving object.
    • 提供一种游戏装置,其能够使操作对象角色在操作对象角色位于相对较远的位置的状态下触摸运动对象的情况下感觉到操作对象角色失去平衡 运动游戏中的运动对象,其中操作对象角色根据用户的预定操作来撞击移动对象。 确定装置(92a)确定移动物体是否位于在执行预定操作的情况下基于操作对象角色的位置设置的判定区域。 操作对象字符控制装置(92b)在确定移动对象位于判定区域的情况下使操作对象角色撞击移动对象。 决定区域控制装置(92c)基于运动对象在基准时刻的位置,基于执行预定操作的时间中的至少一个来控​​制移动对象被击中之后的判定区域的大小,以及 操作对象角色击中移动对象的时间。