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    • 6. 发明申请
    • ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES
    • 人造电子使用纳米结构
    • WO2006110162A2
    • 2006-10-19
    • PCT/US2005/029122
    • 2005-08-16
    • NANOSYS, INC.STUMBO, DavidEMPEDOCLES, SteveLEON, FranciscoPARCE, J. Wallace
    • STUMBO, DavidEMPEDOCLES, SteveLEON, FranciscoPARCE, J. Wallace
    • H05B37/00
    • H01L29/0665B82Y10/00B82Y30/00G11C2213/16G11C2213/81H01L29/0673H01L29/4908H01L51/0537Y10S977/743Y10S977/745Y10S977/762Y10S977/813Y10S977/936
    • Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ration, orientation and density of the nanostructures. Additionally, a controllabe artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).
    • 公开了使用纳米结构的人造电介质,例如纳米线。 在实施例中,公开了使用其他纳米结构的人造电介质,例如纳米棒,纳米管或纳米带等。 人造电介质包括具有嵌入电介质材料内的多个纳米线(或其他纳米结构)的电介质材料。 使用纳米结构的人造电介质可以实现非常高的介电常数。 可以通过改变纳米结构的长度,直径,载流子密度,形状,方面比例,取向和密度来调节介电常数。 此外,公开了一种使用纳米结构的可控制人造电介质,例如纳米线,其中可以通过向可控的人造电介质施加电场来动态地调整介电常数。 各种电子器件可以使用具有纳米结构的人造电介质来提高性能。 示例性器件包括电容器薄膜晶体管,其他类型的薄膜电子器件,微带器件,表面声波(SAW)滤波器,其它类型的滤波器和雷达衰减材料(RAM)。