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1. 发明申请

WO2014180751A1 LIGHT GUIDING FOR VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER 审中-公开
标题翻译：垂直外腔表面发射激光光指导
公开(公告)号：WO2014180751A1
公开(公告)日：2014-11-13
申请号：PCT/EP2014/059022
申请日：2014-05-04
申请人： CAMLIN TECHNOLOGIES (SWITZERLAND) LIMITED
发明人： FELDER, Ferdinand , FILL, Matthias , ZOGG, Hans , DEBERNARDI, Pierluigi
IPC分类号： H01S5/183 , H01S5/32 , H01S5/04 , H01S5/14 , H01S5/42
CPC分类号： H01S5/18308 , H01S5/041 , H01S5/14 , H01S5/18344 , H01S5/18397 , H01S5/3222 , H01S5/423 , H01S5/426 , H01S2301/166 , H01S2301/176
摘要： The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n 2 ) - At least part of said mesa (24) has a first refractive index (n 1 ) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2) - Said first refractive index (n 1 ) is higher than said second refractive index (n 2 ) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI semiconductor gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.
摘要翻译：本发明涉及一种用于垂直发射激光器件的有源增益层堆叠（21），所述有源增益层堆叠（21）包括半导体材料，其中所述半导体材料被构造成使得其形成至少一个台面（24）在垂直方向上延伸。至少部分地围绕所述台面（24）的横向相邻区域（25）具有第二折射率（n 2） - 所述台面（24）的至少一部分具有第一折射率（n 1）和所述第一折射率与台面（24）的所述部分横向相邻的相邻区域（25）具有第二折射率（n 2） - 所述第一折射率（n 1）高于所述第二折射率（n 2），横向的直径选择所述台面（24），使得有源增益层叠层（21）中的横向约束因子增加。本发明还涉及一种包括这种堆叠的激光装置，还涉及这种堆叠的操作方法，以及制造这种叠层的方法。 VECSEL包括在下反射镜上生长的IV-VI半导体增益材料和外腔镜。多个台面（22）可以在单个基板（23）上生长。通过周围材料（25）的较低折射率来改善单一横向模式操作来防止反引导。

2. 发明申请

WO2011116917A1 SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：WO2011116917A1
公开(公告)日：2011-09-29
申请号：PCT/EP2011/001380
申请日：2011-03-21
申请人： ETH ZURICH , FELDER, Ferdinand , RAHIM, Mohamed , FILL, Matthias , ARNILD, Martin , ZOGG, Hans
发明人： FELDER, Ferdinand , RAHIM, Mohamed , FILL, Matthias , ARNILD, Martin , ZOGG, Hans
IPC分类号： H01S5/183 , H01S5/14 , H01S5/30
CPC分类号： H01S5/041 , B82Y20/00 , H01L33/005 , H01S5/0014 , H01S5/14 , H01S5/18397 , H01S5/3222 , H01S5/3426
摘要： A VECSEL-type surface-emitting semiconductor laser device is manufactured by providing a first component part (10) comprising a layered first mirror (12), providing a second component part (20) comprising a layered active region (22), permanently joining the second component part to the first component part to form an integral unit, and arranging a second mirror (32) so as to form an optical cavity containing the active region. This method of manufacture enables production at lower cost and enables greater flexibility in the choice of materials for the mirrors and the active region as well as for the substrates on which the first mirror and the active region are deposited, as compared to traditional monolithic epitaxy methods. Preferably, the laser device is a IV-VI-type VECSEL emitting in the mid-IR range of the electromagnetic spectrum.
摘要翻译：通过提供包括层状第一反射镜（12）的第一部件（10）来制造VECSEL型表面发射半导体激光器件，提供包括层叠有源区域（22）的第二部件（20），永久地连接第二组分部分，以形成整体单元，并且布置第二反射镜以形成包含有源区的光学腔。与传统的单片外延方法相比，这种制造方法能够以更低的成本实现生产，并且在反射镜和有源区以及沉积有第一反射镜和有源区的基板的选择上具有更大的灵活性。优选地，激光装置是在电磁光谱的中红外范围内发射的IV-VI型VECSEL。

3. 发明申请

WO2005076976A2 [110] ORIENTED GROUP IV-VI SEMICONDUCTOR STRUCTURE, AND METHOD FOR MAKING AND USING THE SAME 审中-公开
标题翻译： [110]面向IV-VI族半导体结构及其制造和使用方法
公开(公告)号：WO2005076976A2
公开(公告)日：2005-08-25
申请号：PCT/US2005003756
申请日：2005-02-04
申请人： ZHISHENG SHI , UNIV BOARD OF REGENTS
发明人： ZHISHENG SHI
IPC分类号： H01L29/00 , H01L47/00 , H01S5/32
CPC分类号： H01S5/3222 , H01L31/0324
摘要： A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-IV material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to t he lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.
摘要翻译：一种用于制造器件的生长和制造IV-VI族半导体结构的方法。在一个实施方案中，通过本发明的方法制备的IV-VI族半导体结构包括在[110]的选定取向上生长的IV-IV族材料。制造的器件可以是激光，检测器，太阳能电池，热电冷却器件等。由于能量简并性的降低和低的缺陷密度，根据本方法制造的激光器件将具有低阈值。在[110]取向上的生长也允许半导体结构在不同的衬底上外延生长，这可以改善热耗散并因此增加激光器件的工作温度。

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