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1. 发明申请

WO1980000520A1 METHOD OF MAKING THICK FILM FINE PATTERNS 审中-公开
标题翻译：制作薄膜精细图案的方法
公开(公告)号：WO1980000520A1
公开(公告)日：1980-03-20
申请号：PCT/JP1979000228
申请日：1979-08-28
申请人： FUJITSU LTD , WATANABE Y , MATSUO H
发明人： FUJITSU LTD
IPC分类号： H05K03/00
CPC分类号： H01L21/705 , H05K1/092 , H05K3/06 , H05K3/064 , H05K2203/0783
摘要： A method of making thick film fine patterns comprising the steps of: applying paste for forming circuits on an insulated substrate (3), drying the paste, depositing photoresist material (3) on the surface of the paste film (2), the paste being oily whereas the photoresist is aqueous or vice versa, thereby enabling to form circuit patterns by means of photo-etching technique.

2. 发明申请

WO1984003389A1 THICK FILM RESISTOR CIRCUITS 审中-公开
标题翻译：厚膜电阻电路
公开(公告)号：WO1984003389A1
公开(公告)日：1984-08-30
申请号：PCT/US1984000064
申请日：1984-01-19
申请人： AMERICAN TELEPHONE & TELEGRAPH COMPANY
发明人： AMERICAN TELEPHONE & TELEGRAPH COMPANY , BROWN, John, Francis , STANTON, Robert, Michael
IPC分类号： H01C17/06
CPC分类号： H05K1/167 , H01C17/281 , H01L21/705 , H05K1/092 , H05K3/1291 , H05K2203/087 , H05K2203/1126 , H05K2203/1157 , H05K2203/1453
摘要： A method of forming thick film resistor circuits whereby a non-noble metal, such as copper, requiring a reducing atmosphere is included with resistor material requiring an oxidizing atmosphere. A fritless conductor paste (11, 12) with a small percentage of silver is deposited and fired in air at a low temperature. Resistor (13) are then deposited and fired in air. Subsequently, the conductor material (11, 12) is reduced at a sufficiently low temperature so as not to adversely affect the resistors (13).

3. 发明申请

WO1991011307A1 METHOD OF AND MATERIAL FOR FORMING THICK FILMY PATTERN 审中-公开
标题翻译：形成厚膜图案的材料和材料
公开(公告)号：WO1991011307A1
公开(公告)日：1991-08-08
申请号：PCT/JP1991000080
申请日：1991-01-25
申请人： DAI NIPPON INSATSU KABUSHIKI KAISHA , SAKAI, Yorihiko , ONO, Norikatsu , MINEO, Norikazu , MATSUMOTO, Takeshi , FUJII, Hideaki
发明人： DAI NIPPON INSATSU KABUSHIKI KAISHA
IPC分类号： B28B01/30
CPC分类号： H01L21/4867 , G03F7/0017 , H01L21/481 , H01L21/705 , H05K1/0306 , H05K1/092 , H05K3/0079 , H05K3/0082 , H05K3/1258 , H05K2201/0108 , H05K2203/0113 , H05K2203/0568
摘要： Molds (2, 12, 22, 32, 42, 52, and 62) in desired patterns are formed on substrata (1, 11, 21, 31, 41, 51, and 61). Spaces in the molds are filled with ceramic materials (3, 13, 23, 33, 43, 53, and 63). The molds are removed by heating the whole of each substratum so that desired thick filmy patterns may be formed easily but accurately on the substrata. As ceramic materials, an inorganic paste material composed of an inorganic liquid vehicle constituted mainly of water-glass and powdery solid constituent dispersed in said inorganic liquid vehicle is used. Said inorganic paste material can be prevented from being broken because volumetric change thereof is small when dried and sintered.

4. 发明申请

WO1990006041A1 METHOD OF AND APPARATUS FOR DRAWING THICK-FILM 审中-公开
标题翻译：用于绘制薄膜的方法和装置
公开(公告)号：WO1990006041A1
公开(公告)日：1990-05-31
申请号：PCT/JP1985000198
申请日：1985-04-15
申请人： SAEKI, Keiji , KUDO, Shinichi , NAKATSUJI, Hachiro
IPC分类号： H05K03/12
CPC分类号： H05K3/1241 , H01L21/705 , H05K2203/0126
摘要： A method of and an apparatus for drawing a thick-film circuit on a substrate (2) by discharging paste from a nozzle (1), which has a discharge port, onto the substrate (2). Every time a predetermined length of drawing interruption time has elapsed, the paste is discharged from the tank (6) to make waste drawing on a waste drawing element (11). Thus, the clogging of the discharge port of the tank (6) with the paste is prevented, and the operation efficiency and productivity can thereby be improved.

5. 发明申请

WO2015097979A1 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：WO2015097979A1
公开(公告)日：2015-07-02
申请号：PCT/JP2014/005805
申请日：2014-11-19
申请人：パナソニックIPマネジメント株式会社
发明人：平野　博茂 , 手谷　道成 , 浜田　政一 , 垂水　喜明
IPC分类号： H01L21/3205 , C25D5/12 , C25D7/12 , H01L21/28 , H01L21/288 , H01L21/60 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/498 , C25D5/022 , C25D5/12 , C25D7/123 , H01L21/2885 , H01L21/705 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L21/76879 , H01L21/76885 , H01L23/4924 , H01L23/49811 , H01L23/49838 , H01L23/53238 , H01L23/53266 , H01L24/03 , H01L24/05 , H01L2224/02311 , H01L2224/03462 , H01L2224/0347 , H01L2224/03903 , H01L2224/0401 , H01L2224/05007 , H01L2224/05013 , H01L2224/05024 , H01L2224/05027 , H01L2224/05084 , H01L2224/05147 , H01L2224/05155 , H01L2224/05547 , H01L2224/05553 , H01L2224/05564 , H01L2224/05644 , H01L2224/1403 , H01L2224/14155 , H01L2924/00014
摘要：　十分な酸化耐性又はマイグレーション耐性を有する配線を備えた半導体装置を実現できるようにする。半導体基板（１０１）の上に形成された第１の絶縁膜（１２１）と、第１の絶縁膜（１２１）の上に形成された第１の配線（１３１）と、第１の配線（１３１）を覆うように、第１の絶縁膜（１２１）の上に設けられた第２の絶縁膜（１２２）と、第２の絶縁膜（１２２）の上に形成された第２の配線（１３２）とを備えている。第２の絶縁膜（１２２）は、第１の配線（１３１）の上面を露出する第１の開口部（１２２ａ）及び第２の開口部（１２２ｂ）を有している。第２の配線（１３２）は、シード層（１４２）と、シード層（１４２）の全側面を被覆する第１のめっき層（１４５）とを有し、シード層（１４２）は、第２の開口部（１２２ｂ）の周囲には形成されていない。
摘要翻译：提供配备有具有足够的耐氧化性或耐迁移性的布线的半导体器件。该半导体装置配备有形成在半导体基板（101）上的第一绝缘膜（121）。形成在第一绝缘膜（121）上的第一布线（131）设置在第一绝缘膜（121）上以覆盖第一布线（131）的第二绝缘膜（122）; 和形成在第二绝缘膜（122）上的第二布线（132）。第二绝缘膜（122）具有第一开口（122a）和第二开口（122b），第一布线（131）的上表面从该开口露出。第二布线（132）具有种子层（142），覆盖种子层（142）的整个侧面的第一镀层（145）和种子层（142）不形成在第二开口周围（122B）。

6. 发明申请

WO2010109430A3 APPARATUS AND METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：用于制造集成电路的装置和方法
公开(公告)号：WO2010109430A3
公开(公告)日：2011-08-25
申请号：PCT/IB2010051295
申请日：2010-03-24
申请人： KONINKL PHILIPS ELECTRONICS NV , DE WIJS WILLEM-JAN A , VAN DE SANDE MARCUS J
发明人： DE WIJS WILLEM-JAN A , VAN DE SANDE MARCUS J
IPC分类号： H05K3/12
CPC分类号： H01L31/188 , H01L21/705 , H01L31/022425 , H01L31/0512 , H01L31/1864 , H01L31/1876 , H05K3/10 , H05K3/12 , H05K3/1283 , H05K2203/101 , Y02E10/50
摘要： The present invention relates to an apparatus for manufacturing an integrated circuit (10) having a thick film metal layer (14). A layer of metal paste (14) is applied via an application means (24) onto a heat-conducting substrate (12). The metal paste (14) includes metal particles of a predetermined size. An RF generator (16) selectively inductively couples RF energy (18) into the metal paste (14). The predetermined size of the metal particles of the metal paste (14) corresponds to a coupling frequency of the RF energy (18), for heating the metal particles. In this way the metal particles of the metal paste (14) are heated with only a small fraction of the power of conventional processes, and without the need to pre-sinter the metal paste (14).
摘要翻译：本发明涉及一种具有厚膜金属层（14）的集成电路（10）的制造装置。通过施加装置（24）将一层金属浆料（14）施加到导热基底（12）上。金属膏（14）包括预定尺寸的金属颗粒。 RF发生器（16）选择性地将RF能量（18）感应耦合到金属糊（14）中。金属糊料（14）的金属颗粒的预定尺寸对应于RF能量（18）的耦合频率，用于加热金属颗粒。以这种方式，金属浆料（14）的金属颗粒仅以常规方法的一小部分功率加热，而不需要预先烧结金属糊料（14）。

7. 发明申请

WO1990011673A1 METHOD AND DEVICE FOR MAKING INTEGRATED CIRCUITS 审中-公开
标题翻译：用于制造集成电路的方法和装置
公开(公告)号：WO1990011673A1
公开(公告)日：1990-10-04
申请号：PCT/SU1989000207
申请日：1989-08-09
申请人： ZYBIN, Kirill Petrovich , MAXIMOVSKY, Sergei Nikolaevich , RADUTSKY, Grigory Avramovich
IPC分类号： H05K03/12
CPC分类号： H01L21/6715 , H01L21/705 , H01L39/2429 , H05K3/1241 , H05K13/0469 , H05K2203/0126
摘要： A method of making integrated circuits provides for applying on a sublayer (1), according to a predetermined topology, of circuit elements in the form of pluralities (A, B, C, D) of points arranged in a predetermined coordinate system (x/y) and applied in the form of separate drops (2) of liquid application compounds. The pluralities (A, B, C, D) of points constitute the blank elements for the integrated circuit which are then subjected to heat treatment to obtain the desired integrated circuit. A device for implementing the method comprises consecutively located units (9, 10, 11) for application of liquid compounds provided with capillar nozzles (15) and located in a predetermined coordinate system (x/y), and electrically controlled means for selective shots of drops (2) of liquid application compounds through capillar nozzles (15) on a sublayer (1) placed on a unit (7) intended for fastening the sublayer (1) and mounted on a means (8) for moving the unit (7) for fastening the sublayer (1). The device further comprises a control unit (16) connected to electrically controlled means for selective shots of drops (2) and to a voltage pulse generator (21), a unit (12) for the heat treatment of the applied compounds and means (13) for drying the applied compounds which are located between said units.

8. 发明申请

WO2015155662A1 PULSED-MODE DIRECT-WRITE LASER METALLIZATION 审中-公开
标题翻译：脉冲模式直接写激光金属化
公开(公告)号：WO2015155662A1
公开(公告)日：2015-10-15
申请号：PCT/IB2015/052476
申请日：2015-04-05
申请人： ORBOTECH LTD.
发明人： ZENOU, Michael , KOTLER, Zvi , ANKRI, Jonathan , ROTNEMER, Abraham , ERMAK, Oleg
IPC分类号： H01L21/477 , H01L21/4763 , H05K3/02
CPC分类号： H05K3/1283 , H01L21/705 , H05K3/12 , H05K3/38 , H05K2203/107 , H05K2203/1492
摘要： A method for manufacturing includes coating a substrate (22) with a matrix (28) containing a material to be patterned on the substrate. A pattern is fixed in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.
摘要翻译：一种制造方法包括用在衬底上含有要被图案化的材料的基质（28）涂覆衬底（22）。通过使脉冲能量束照射到图案的轨迹上，使图案固定在矩阵中，从而沿着图案使材料粘附到基板上，而不完全烧结图案中的材料。除去残留在固定图案外的基板上的基质，在除去基体之后，将图案中的材料烧结。

9. 发明申请

WO2010109430A2 APPARATUS AND METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：用于制造集成电路的装置和方法
公开(公告)号：WO2010109430A2
公开(公告)日：2010-09-30
申请号：PCT/IB2010/051295
申请日：2010-03-24
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DE WIJS, Willem-Jan, A. , VAN DE SANDE, Marcus, J.
发明人： DE WIJS, Willem-Jan, A. , VAN DE SANDE, Marcus, J.
IPC分类号： H01L21/00 , C23C14/00
CPC分类号： H01L31/188 , H01L21/705 , H01L31/022425 , H01L31/0512 , H01L31/1864 , H01L31/1876 , H05K3/10 , H05K3/12 , H05K3/1283 , H05K2203/101 , Y02E10/50
摘要： The present invention relates to an apparatus for manufacturing an integrated circuit (10) having a thick film metal layer (14). A layer of metal paste (14) is applied via an application means (24) onto a heat-conducting substrate (12). The metal paste (14) includes metal particles of a predetermined size. An RF generator (16) selectively inductively couples RF energy (18) into the metal paste (14). The predetermined size of the metal particles of the metal paste (14) corresponds to a coupling frequency of the RF energy (18), for heating the metal particles. In this way the metal particles of the metal paste (14) are heated with only a small fraction of the power of conventional processes, and without the need to pre-sinter the metal paste (14).
摘要翻译：本发明涉及一种具有厚膜金属层（14）的集成电路（10）的制造装置。通过施加装置（24）将一层金属浆料（14）施加到导热基底（12）上。金属膏（14）包括预定尺寸的金属颗粒。 RF发生器（16）选择性地将RF能量（18）感应耦合到金属糊（14）中。金属糊料（14）的金属颗粒的预定尺寸对应于RF能量（18）的耦合频率，用于加热金属颗粒。以这种方式，金属浆料（14）的金属颗粒仅以常规方法的一小部分功率加热，而不需要预先烧结金属糊料（14）。

10. 发明申请

WO1988002183A1 TRIMMING PASSIVE COMPONENTS BURIED IN MULTILAYER STRUCTURES 审中-公开
标题翻译：在多层结构中修剪被动组件
公开(公告)号：WO1988002183A1
公开(公告)日：1988-03-24
申请号：PCT/US1987001774
申请日：1987-07-27
申请人： HUGHES AIRCRAFT COMPANY
发明人： HUGHES AIRCRAFT COMPANY , POND, Ramona, G. , VITRIOL, William, A. , BROWN, Raymond, L.
IPC分类号： H01L21/70
CPC分类号： H01G4/255 , H01C17/242 , H01L21/705 , H03H3/00 , H05K1/0298 , H05K1/0306 , H05K1/16
摘要： A technique for trimming resistors and other passive circuit components buried in hybrid multilayer circuit structures. For example, resistors (13) are formed between two dielectric layers (11, 19) of a hybrid multilayer circuit structure (10). The multilayer circuit structure with the buried resistors is appropriately processed to provide a fired multilayer circuit structure. Trimming of the buried resistors is accomplished with a laser beam that cuts through dielectric material of the fired circuit structure to selectively remove part of the resistive material of the buried resistors. The values of the buried resistors may be tested with conductive elements (15, 17) that are conductively coupled to the buried resistors. The disclosed technique also contemplates the trimming of other buried passive circuit components such as capacitors, and further contemplates the use of other trimming methods such as abrasive, air jet, or water jet trimming.
摘要翻译：一种用于微调电阻和埋入混合多层电路结构中的其他无源电路元件的技术。例如，电阻器（13）形成在混合多层电路结构（10）的两个电介质层（11,19）之间。适当地处理具有埋入电阻器的多层电路结构以提供烧制的多层电路结构。掩埋电阻器的修整通过切割烧结电路结构的介电材料的激光束来实现，以选择性地去除掩埋电阻器的电阻材料的一部分。可以使用导电耦合到埋入式电阻器的导电元件（15,17）来测试掩埋电阻器的值。所公开的技术还考虑了诸如电容器之类的其它被掩埋的无源电路部件的修整，并且进一步考虑使用其它修整方法，例如磨料，空气喷射或水射流修整。

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