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1. 发明申请

WO2004088702A2 IMAGE INTENSIFIER AND ELECTRON MULTIPLIER THEREFOR 审中-公开
标题翻译：图像增强器和电子乘法器
公开(公告)号：WO2004088702A2
公开(公告)日：2004-10-14
申请号：PCT/US2004/009140
申请日：2004-03-25
申请人： ITT MANUFACTURING ENTERPRISES, INC. , SMITH, Arlynn, Walter
发明人： SMITH, Arlynn, Walter
IPC分类号： H01J1/00
CPC分类号： H01J43/10 , H01J1/32 , H01J31/506
摘要： An image intensifier and electron multiplier therefor is disclosed. Photons of an image impinge a photo-cathode that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure. The semiconductor structure has an input surface for receiving electrons and an emission surface for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.
摘要翻译：公开了一种图像增强器及其电子倍增器。图像的光子撞击将光子转换成电子的光阴极。电子倍增器将来自光阴极的电子乘以产生增加数量的电子。传感器捕获增加的电子数以产生增强的图像。电子倍增器是含有半导体结构的电子轰击装置（EBD）。半导体结构具有用于接收电子的输入表面和用于通过增加数量的电子的发射表面。半导体结构被掺杂以将电子流通过半导体结构引导到发射表面上的发射区域。

2. 发明申请

WO2011149351A1 AN ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE 审中-公开
标题翻译：在使用电子扩散的电子管中使用电子制造结构，如使用通过电子扩散提供的真空管，使用这种电子扩散结构
公开(公告)号：WO2011149351A1
公开(公告)日：2011-12-01
申请号：PCT/NL2011/050372
申请日：2011-05-27
申请人： PHOTONIS FRANCE SAS , NÜTZEL, Gert , LAVOUTE, Pascal , JACKMAN, Richard
发明人： NÜTZEL, Gert , LAVOUTE, Pascal , JACKMAN, Richard
IPC分类号： H01J31/50 , H01J40/06 , H01J1/32
CPC分类号： H01J43/04 , H01J1/32 , H01J31/48 , H01J31/506 , H01J43/16
摘要： The invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying and to an vacuum tube using electron multiplying provided with such an electron multiplying structure. According to the invention an electron multiplying structure is proposed for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows.
摘要翻译：本发明涉及一种在使用电子倍增的真空管中使用的电子倍增结构和使用具有这种电子倍增结构的电子倍增管的真空管。根据本发明，提出了一种在使用电子倍增的真空管中使用的电子倍增结构，该电子倍增结构包括用于与真空管的入口相对置的输入面，与真空管的检测表面面对关系，其中电子倍增结构至少由邻近检测窗的半导体材料层组成。

3. 发明申请

WO99004413A1 NIGHT VISION DEVICE HAVING AN IMAGE INTENSIFIER TUBE 审中-公开
标题翻译：具有图像增强器管的夜视设备
公开(公告)号：WO99004413A1
公开(公告)日：1999-01-28
申请号：PCT/US1998/015117
申请日：1998-07-15
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/14 , H01J43/00 , H01L31/18
CPC分类号： H01J31/506 , H01J1/34 , H01J29/38 , H01J2201/3423
摘要： A night vision device (10) includes an image intensifier tube (14) which includes a photocathode (22) responsive both to white light and to infrared light to release photoelectrons. The photocathode (22) is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.
摘要翻译：夜视装置（10）包括图像增强管（14），其包括响应白光和红外光以释放光电子的光电阴极（22）。光电阴极（22）对980nm波长的红外光特别敏感，具有期望的光谱响应特性。

4. 发明申请

WO2004088702A3 IMAGE INTENSIFIER AND ELECTRON MULTIPLIER THEREFOR 审中-公开
标题翻译：图像增强器和电子乘法器
公开(公告)号：WO2004088702A3
公开(公告)日：2005-03-03
申请号：PCT/US2004009140
申请日：2004-03-25
申请人： ITT MFG ENTERPRISES INC , SMITH ARLYNN WALTER
发明人： SMITH ARLYNN WALTER
IPC分类号： H01J1/32 , H01J31/50 , H01J43/10 , H01J43/22
CPC分类号： H01J43/10 , H01J1/32 , H01J31/506
摘要： An image intensifier (300) and electron multiplier (312) therefor is disclosed. Photons (308) of an image impinge a photo-cathode (306) that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor (304) captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure (320). The semiconductor structure has an input surface (320a) for receiving electrons and an emission surface (320b) for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.
摘要翻译：公开了一种图像增强器（300）和电子倍增器（312）。图像的光子（308）撞击将光子转换成电子的光阴极（306）。电子倍增器将来自光阴极的电子乘以产生增加数量的电子。传感器（304）捕获增加数量的电子以产生增强的图像。电子倍增器是含有半导体结构（320）的电子轰击装置（EBD）。半导体结构具有用于接收电子的输入表面（320a）和用于使更多数量的电子通过的发射表面（320b）。半导体结构被掺杂以将电子流通过半导体结构引导到发射表面上的发射区域。

5. 发明申请

WO2003077271A1 透過型2次電子面及び電子管审中-公开
标题翻译：发射型二次电子表面和电子管
公开(公告)号：WO2003077271A1
公开(公告)日：2003-09-18
申请号：PCT/JP2003/001992
申请日：2003-02-24
申请人：浜松ホトニクス株式会社 , 新垣実 , 内山昌一 , 菅博文
发明人：新垣実 , 内山昌一 , 菅博文
IPC分类号： H01J1/32
CPC分类号： H01J31/50 , H01J1/32 , H01J29/023 , H01J29/482 , H01J31/506 , H01J43/22
摘要： A transmitting type secondary electron surface comprising a secondary electron discharge layer (1) formed of diamond or a material mainly containing diamond, a support frame (21) for reinforcing the mechanical strength of the secondary electron discharge layer (1), a first electrode (31) provided for the incident surface of the secondary electron discharge layer (1), and a second electrode (32) provided for the outgoing surface of the secondary electron discharge layer (1). Voltage is applied between the incident surface and the outgoing surface of the secondary electron discharge layer (1) to form an electric field inside the secondary electron discharge layer (1). When primary electrons are incident to form secondary electrons inside the secondary electron discharge layer (1), secondary electrons are accelerated in an outgoing direction by the electric field formed inside the secondary electron discharge layer (1) to be discharged to the outside of a transmitting type secondary electron surface. Accordingly, a transmitting type secondary electron surface capable of efficiently emitting secondary electrons as a result of incident primary electrons, and an electron tube using it are realized.
摘要翻译：一种透射型二次电子表面，包括由金刚石形成的二次电子放电层（1）或主要含有金刚石的材料，用于增强二次电子放电层（1）的机械强度的支撑框架（21），第一电极设置在二次电子放电层（1）的入射面上的第一电极（31）和设置在二次电子放电层（1）的出射面的第二电极（32）。在二次电子放电层（1）的入射面和出射面之间施加电压，在二次电子放电层（1）的内部形成电场。当一次电子入射以在二次电子放电层（1）内形成二次电子时，二次电子通过形成在二次电子放电层（1）内部的电场在出射方向上被加速，以被放电到发射型二次电子表面。因此，实现了能够有效地发射作为入射的一次电子的结果的二次电子的透射型二次电子表面和使用它的电子管。

6. 发明申请

WO00002227A1 X-RAY IMAGE DETECTOR 审中-公开
标题翻译： X射线图像检测器
公开(公告)号：WO00002227A1
公开(公告)日：2000-01-13
申请号：PCT/JP1999/003555
申请日：1999-07-01
IPC分类号： H01J31/50
CPC分类号： H01J31/507 , H01J31/506 , H01J2231/50031 , H01J2231/50036 , H01J2231/50063 , H01J2231/50094
摘要： An X-ray image detector has a structure in which an input fluorescence surface (8) and an output fluorescent surface (17) are arranged in parallel with a predetermined spacing (1). An electron multiplier tube (13) is arranged between the input fluorescence surface (8) and the output fluorescent surface (17). The electron multiplier tube has a structure in which metallic plates (14) of a predetermined thickness having a plurality of holes alternate with insulating members (15) of a predetermined thickness having slits for passing photoelectrons (E) passing through the holes. In addition, the X-ray image detector includes an image sensor (3) that produces image signals from image information obtained through an output window (18).
摘要翻译： X射线图像检测器具有输入荧光面（8）和输出荧光面（17）以规定间隔（1）平行排列的结构。电子倍增管（13）设置在输入荧光表面（8）和输出荧光表面（17）之间。电子倍增管具有这样的结构，其中具有多个孔的预定厚度的金属板（14）与预定厚度的绝缘构件（15）交替，具有用于通过穿过孔的光电子（E）的狭缝。此外，X射线图像检测器包括从通过输出窗口（18）获得的图像信息产生图像信号的图像传感器（3）。

7. 发明申请

WO2004107378A3 TUNED BANDWIDTH PHOTOCATHODE FOR TRANSMISSION ELECTRON AFFINITY DEVICES 审中-公开
标题翻译：用于传输电子自动设备的调制带宽光栅
公开(公告)号：WO2004107378A3
公开(公告)日：2005-03-24
申请号：PCT/US2004011690
申请日：2004-04-15
申请人： ITT MFG ENTERPRISES INC , SILLMON ROGER S , SMITH ARLYNN WALTER , BENZ RUDY G
发明人： SILLMON ROGER S , SMITH ARLYNN WALTER , BENZ RUDY G
IPC分类号： H01J1/00 , H01J9/12 , H01J31/50 , H01J40/06 , H01J43/08 , H01L21/00 , H01L27/146 , H01L29/12
CPC分类号： H01J31/506 , H01J1/34 , H01J9/12 , H01J43/08
摘要： A photocathode includes a first layer (52) having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer (53) having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.
摘要翻译：光电阴极包括具有第一能带隙的第一层（52），用于提供短于或等于第一波长的波长的光的吸收;具有用于提供波长的光的透射的第二能带隙的第二层（53）以及具有第三能带隙的第三层，用于提供在第一波长和第二波长之间的波长的光的吸收。第一波长比第二波长短。第一层，第二层和第三层依次位于光电阴极的输入和输出侧之间。

8. 发明申请

WO2004107378A2 TUNED BANDWIDTH PHOTOCATHODE FOR TRANSMISSION ELECTRON AFFINITY DEVICES 审中-公开
标题翻译：用于传输电子自动设备的调制带宽光栅
公开(公告)号：WO2004107378A2
公开(公告)日：2004-12-09
申请号：PCT/US2004/011690
申请日：2004-04-15
申请人： ITT MANUFACTURING ENTERPRISES, INC. , SILLMON, Roger, S. , SMITH, Arlynn, Walter , BENZ, Rudy, G.
发明人： SILLMON, Roger, S. , SMITH, Arlynn, Walter , BENZ, Rudy, G.
IPC分类号： H01J1/00
CPC分类号： H01J31/506 , H01J1/34 , H01J9/12 , H01J43/08
摘要： A photocathode includes a first layer having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.
摘要翻译：光电阴极包括具有用于提供短于或等于第一波长的波长的光的吸收的第一能带隙的第一层，具有用于提供长于第一波长的波长的光的透射的第二能带隙的第二层，以及具有用于提供第一波长和第二波长之间的波长的光的吸收的第三能带隙的第三层。第一波长比第二波长短。第一层，第二层和第三层依次位于光电阴极的输入和输出侧之间。

9. 发明申请

WO1994006148A1 X-RAY MICROSCOPE WITH A DIRECT CONVERSION TYPE X-RAY PHOTOCATHODE 审中-公开
标题翻译：具有直接转换型X射线光刻胶的X射线显微镜
公开(公告)号：WO1994006148A1
公开(公告)日：1994-03-17
申请号：PCT/US1993007885
申请日：1993-08-23
申请人： CSL OPTO-ELECTRONICS, INC.
发明人： CSL OPTO-ELECTRONICS, INC. , SHE, Yongzheng , CHEN, Shizheng , CAO, Weilou , SHIH, Yanhua
IPC分类号： H01J31/50
CPC分类号： H01J29/38 , H01J31/506
摘要： A direct conversion X-ray photo-electron cathode has specially designed secondary emission layers which provide high efficiency, low noise, high speed and broad band X-ray photo detection. The X-ray photocathode (7, 8) is integrated with a microchannel plate (9) and an output phosphor display screen (10) to form a panel type X-ray intensifier. The X-ray intensifier is combined with a micro-focus X-ray source to provide a projection type X-ray microscope for use in X-ray microscopic diagnostic applications.
摘要翻译：直接转换X射线光电子阴极具有特殊设计的二次发射层，提供高效，低噪声，高速和宽带X射线光电检测。 X射线光电阴极（7,8）与微通道板（9）和输出磷光体显示屏（10）集成，以形成面板式X射线增强器。 X射线增强器与微焦X射线源组合以提供用于X射线显微诊断应用的投影型X射线显微镜。

10. 发明申请

WO2016104243A1 光電面、光電変換管、イメージインテンシファイア、及び光電子増倍管审中-公开
标题翻译：光电表面，光电转换管，图像增强器和光电管
公开(公告)号：WO2016104243A1
公开(公告)日：2016-06-30
申请号：PCT/JP2015/085037
申请日：2015-12-15
申请人：浜松ホトニクス株式会社
发明人：佐々木　達夫
IPC分类号： H01J1/34 , H01J1/78 , H01J29/38 , H01J31/50 , H01J40/06 , H01J40/16
CPC分类号： H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
摘要：光電面の紫外線帯域における感度を向上させる。光電面１は、紫外線を透過する窓材２と、窓材２に形成され、導電性を有する導電膜３と、導電膜３に形成され、ＭｇＦ２からなる中間膜４と、中間膜４に形成され、ＣｓＴｅからなる光電変換膜６と、を備える。光電面１は、ＭｇＦ２からなる中間膜４を備えるので、紫外線帯域の感度が向上する。
摘要翻译：本发明提高光电表面的紫外线带的灵敏度。光电面1设置有透过紫外线的窗口材料2，形成在窗口材料2中并具有导电性的导电膜3，形成在导电膜3中并包含MgF 2的中间膜4和光电转换膜6 形成在中间膜4中并且包括CsTe。由于光电面1设置有包含MgF 2的中间膜4，所以提高了紫外线带的灵敏度。

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