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1. 发明申请

WO2004107378A2 TUNED BANDWIDTH PHOTOCATHODE FOR TRANSMISSION ELECTRON AFFINITY DEVICES 审中-公开
标题翻译：用于传输电子自动设备的调制带宽光栅
公开(公告)号：WO2004107378A2
公开(公告)日：2004-12-09
申请号：PCT/US2004/011690
申请日：2004-04-15
申请人： ITT MANUFACTURING ENTERPRISES, INC. , SILLMON, Roger, S. , SMITH, Arlynn, Walter , BENZ, Rudy, G.
发明人： SILLMON, Roger, S. , SMITH, Arlynn, Walter , BENZ, Rudy, G.
IPC分类号： H01J1/00
CPC分类号： H01J31/506 , H01J1/34 , H01J9/12 , H01J43/08
摘要： A photocathode includes a first layer having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.
摘要翻译：光电阴极包括具有用于提供短于或等于第一波长的波长的光的吸收的第一能带隙的第一层，具有用于提供长于第一波长的波长的光的透射的第二能带隙的第二层，以及具有用于提供第一波长和第二波长之间的波长的光的吸收的第三能带隙的第三层。第一波长比第二波长短。第一层，第二层和第三层依次位于光电阴极的输入和输出侧之间。

2. 发明申请

WO2005057608A2 DEVICE AND METHOD FOR FABRICATION OF MICROCHANNEL PLATES USING A MEGA-BOULE WAFER 审中-公开
标题翻译：使用MEGA-BOULE WAFER制造微通道板的装置和方法
公开(公告)号：WO2005057608A2
公开(公告)日：2005-06-23
申请号：PCT/US2004/040220
申请日：2004-12-02
申请人： ITT MANUFACTURING ENTERPRISES, INC. , SMITH, Arlynn, Walter , VRESCAK, Warren, D. , DeVOE, Nelson, Christopher , ROSINE, Steve, David , SMITH, William, Allen
发明人： SMITH, Arlynn, Walter , VRESCAK, Warren, D. , DeVOE, Nelson, Christopher , ROSINE, Steve, David , SMITH, William, Allen
IPC分类号： H01J43/00
CPC分类号： H01J43/246 , H01J9/125
摘要： The present invention provides a mega-boule for use in fabricating microchannel plates (MCPs). The mega-boule includes a cross-sectional surface having at least first, second and third areas, each area occupying a distinct portion of the cross-sectional surface. The first and second areas include a plurality of optical fibers, transversely oriented to the cross-sectional surface, each optical fiber having a cladding formed of non-etchable material and a core formed of etchable material. The third area is disposed interstitially between and surrounding the first and second areas, and includes non-etchable material.
摘要翻译：本发明提供用于制造微通道板（MCP）的大型毛坯。大型毛坯包括具有至少第一，第二和第三区域的横截面，每个区域占据横截面的不同部分。第一和第二区域包括横向定向到横截面的多个光纤，每个光纤具有由不可蚀刻材料形成的包层和由可蚀刻材料形成的芯。第三区域布置在第一和第二区域之间且围绕第一区域和第二区域之间并且包括不可蚀刻的材料。

3. 发明申请

WO2005057603A2 SURFACE STRUCTURES FOR HALO REDUCTION IN ELECTRON BOMBARDED DEVICES 审中-公开
标题翻译：电子元件中HALO还原的表面结构
公开(公告)号：WO2005057603A2
公开(公告)日：2005-06-23
申请号：PCT/US2004/040222
申请日：2004-12-02
申请人： ITT MANUFACTURING ENTERPRISES, INC. , SMITH, Arlynn, Walter
发明人： SMITH, Arlynn, Walter
IPC分类号： H01J
CPC分类号： H01J29/085 , H01J31/507 , H01J2231/50073 , H01J2231/50078
摘要： An electron sensing device includes a cathode for providing a source of electrons, and an anode disposed opposite to the cathode for receiving electrons emitted from the cathode. The anode includes a textured surface for reducing halo in the output signal of the electron sensing device. The textured surface may include either pits or inverted pyramids.
摘要翻译：电子感测装置包括用于提供电子源的阴极和与阴极相对设置的用于接收从阴极发射的电子的阳极。阳极包括用于减少电子感测装置的输出信号中的光晕的纹理表面。纹理表面可以包括凹坑或倒棱锥。

4. 发明申请

WO2004088702A2 IMAGE INTENSIFIER AND ELECTRON MULTIPLIER THEREFOR 审中-公开
标题翻译：图像增强器和电子乘法器
公开(公告)号：WO2004088702A2
公开(公告)日：2004-10-14
申请号：PCT/US2004/009140
申请日：2004-03-25
申请人： ITT MANUFACTURING ENTERPRISES, INC. , SMITH, Arlynn, Walter
发明人： SMITH, Arlynn, Walter
IPC分类号： H01J1/00
CPC分类号： H01J43/10 , H01J1/32 , H01J31/506
摘要： An image intensifier and electron multiplier therefor is disclosed. Photons of an image impinge a photo-cathode that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure. The semiconductor structure has an input surface for receiving electrons and an emission surface for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.
摘要翻译：公开了一种图像增强器及其电子倍增器。图像的光子撞击将光子转换成电子的光阴极。电子倍增器将来自光阴极的电子乘以产生增加数量的电子。传感器捕获增加的电子数以产生增强的图像。电子倍增器是含有半导体结构的电子轰击装置（EBD）。半导体结构具有用于接收电子的输入表面和用于通过增加数量的电子的发射表面。半导体结构被掺杂以将电子流通过半导体结构引导到发射表面上的发射区域。

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