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1. 发明申请

WO2013062617A1 HIGH DENSITY MOLECULAR MEMORY STORAGE WITH READ AND WRITE CAPABILITES 审中-公开
标题翻译：具有读和写能力的高密度分子存储器存储
公开(公告)号：WO2013062617A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/029624
申请日：2012-03-19
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , VENKATARAMAN, Karthik , MOODERA, Jagadeesh, S.
发明人： VENKATARAMAN, Karthik , MOODERA, Jagadeesh, S.
IPC分类号： G11B5/02 , G11B9/04 , G11B9/14 , G11B5/62 , G11C11/16 , H01F10/00 , G11B5/74
CPC分类号： G11B5/02 , G11B5/64 , G11B5/65 , G11B5/746 , G11B9/04 , G11B9/149 , G11B2005/0002 , G11C11/161 , G11C11/1675 , G11C13/0014 , H01F10/005 , H01F10/3254 , H01F41/325
摘要： A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical π-dimer layer structure.
摘要翻译：提供了一种存储元件，其包括具有一个或多个铁磁材料的铁磁（FM）层。一个或多个第一分子层位于FM层上，其中一个或多个第一分子层和FM层之间的电荷转移和界面化学在一个或多个第一分子层中诱导磁矩。磁矩存储在作为保留或写入一个或多个第一分子层的位信息的一个或多个第一分子层中。一个或多个自旋过滤层位于一个或多个第一分子层上。一个或多个自旋过滤器层定位在一个或多个自旋过滤器层上以形成物理或化学的二聚体 - 二聚体层结构。

2. 发明申请

WO2004032157A1 SUPPRESSION OF THERMAL NOISE USING SPIN TRANSFER IN MAGNETORESISTIVE ELEMENTS 审中-公开
标题翻译：使用电磁元件中的旋转传递来抑制热噪声
公开(公告)号：WO2004032157A1
公开(公告)日：2004-04-15
申请号：PCT/US2003/029913
申请日：2003-09-25
申请人： SEAGATE TECHNOLOGY LLC
发明人： COVINGTON, Mark, W.
IPC分类号： H01F10/32
CPC分类号： B82Y25/00 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F10/329 , H01F41/325
摘要： A system and method of reducing noise due to thermally activated spin waves in a magnetoresistive (MR) element 30 is disclosed. The MR element 30 includes a free layer 32, a reference layer 36, and a spacer layer 34, the spacer layer 34 being positioned between the free layer 32 and the reference layer 36. To reduce noise, a magnetization of the reference layer 36 is pinned in a fixed direction. A spin polarized current perpendicular to a plane of the free layer 32, reference layer 36, and spacer layer 34 is subsequently produced such that the current exerts a spin momentum transfer torque on localized electron spins to reduce noise due to thermally activated spin waves. The spin momentum transfer torque opposes the intrinsic damping of the free layer 32, thereby reducing noise in the MR element 30.
摘要翻译：公开了一种在磁阻（MR）元件30中降低由热激活自旋波引起的噪声的系统和方法。 MR元件30包括自由层32，参考层36和间隔层34，间隔层34位于自由层32和参考层36之间。为了降低噪声，参考层36的磁化是固定在固定的方向。随后产生垂直于自由层32，参考层36和间隔层34的平面的自旋极化电流，使得电流在局部电子自旋上施加自旋动量传递扭矩，以减少由于热激活的自旋波引起的噪声。自旋动量传递扭矩与自由层32的固有阻尼相反，从而降低MR元件30中的噪声。

3. 发明申请

WO2002078021A1 MAGNETORESISTIVE SPIN-VALVE SENSOR AND READ HEAD 审中-公开
标题翻译：磁力传感器和读取头
公开(公告)号：WO2002078021A1
公开(公告)日：2002-10-03
申请号：PCT/JP2001/009447
申请日：2001-10-26
申请人： FUJITSU LIMITED , HONG, Jongill , KANAI, Hitoshi , KANE, Junichi , NOMA, Kenji
发明人： HONG, Jongill , KANAI, Hitoshi , KANE, Junichi , NOMA, Kenji
IPC分类号： H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F41/325 , Y10T428/1121 , Y10T428/1164 , Y10T428/1193
摘要： A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.
摘要翻译：磁阻自旋阀传感器被构造为包括磁性层，由金属氧化物制成的镜面层，由Au，Cu，AuCu，AgCu，AuAgCu或其合金制成的背层，并且介于磁性层和镜面并且与背层相对设置的与镜面层相邻的金属层，并且由改善磁阻自旋阀传感器的GMR性能的金属制成。

4. 发明申请

WO2014051943A1 PERPENDICULAR MTJ STACKS INCLUDING MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER 审中-公开
标题翻译：包括磁性各向异性增强层和结晶障碍层
公开(公告)号：WO2014051943A1
公开(公告)日：2014-04-03
申请号：PCT/US2013/058092
申请日：2013-09-04
申请人： INTEL CORPORATION
发明人： OGUZ, Kaan , DOCZY, Mark L. , DOYLE, Brian , SHAH, Uday , KENCKE, David L. , GOLIZADEH MOJARAD, Roksana , CHAU, Robert S.
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/18 , H01F10/1933 , H01F10/3254 , H01F10/3286 , H01F41/325 , H01L27/226 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
摘要翻译：适用于自旋转移转矩存储器（STTM）器件的磁隧道结（MTJ）包括垂直磁性层和通过结晶阻挡层与自由磁性层分离的一个或多个各向异性增强层。在实施方案中，各向异性增强层改善了自由磁性层的垂直取向，而结晶势垒改善了隧道磁阻（TMR）比，同时自由磁层的晶体结构与隧穿层的结构更好地对准。

5. 发明申请

WO2014036101A1 METAL PROTECTION LAYER OVER SIN ENCAPSULATION FOR SPIN-TORQUE MRAM DEVICE APPLICATIONS 审中-公开
标题翻译：金属保护层用于旋转扭矩MRAM器件的应用
公开(公告)号：WO2014036101A1
公开(公告)日：2014-03-06
申请号：PCT/US2013/057018
申请日：2013-08-28
申请人： HEADWAY TECHNOLOGIES, INC.
发明人： HUANG, Kenlin , CHIN, Yuan-Tung , ZHONG, Tom , TORNG, Chyu-Jiuh
IPC分类号： H01F10/32 , H01F41/30 , H01F41/32 , G01R33/09 , G11C11/16 , H01L43/12
CPC分类号： G01R33/098 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F41/308 , H01F41/325 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the processing by a metal overlayer, preferably of Ta, Al, TiN, TaN or W. A sequence of low pressure plasma etches, using Oxygen, Cl 2 , BCl 3 and C 2 H 4 chemistries provide selectivity of the metal overlayer to various oxide layers and to the photo- resist hard masks used in patterning and metal layer and thereby allow the formation of bit lines while maintaining the integrity of the SiN layer.
摘要翻译：通过SiN的防氧化封装层，在随后的工艺（例如位线形成）中图案化和保护磁性薄膜沉积物免于氧化。然后，SiN层在金属覆盖层，优选Ta，Al，TiN，TaN或W的处理过程中自身受到保护。使用氧气，Cl2，BCl3和C2H4化学物质的低压等离子体蚀刻序列提供金属覆层的选择性到各种氧化物层和用于图案化和金属层中的光致抗蚀剂硬掩模，从而允许形成位线，同时保持SiN层的完整性。

6. 发明申请

WO2012141643A1 SPIN-FILTER AND DETECTOR COMPRISING THE SAME 审中-公开
标题翻译：旋转过滤器和包括它的检测器
公开(公告)号：WO2012141643A1
公开(公告)日：2012-10-18
申请号：PCT/SE2012/050318
申请日：2012-03-22
申请人： TJERNBERG, Oscar
发明人： TJERNBERG, Oscar
IPC分类号： H01F10/00 , B82Y10/00 , B82Y25/00 , G01R33/09 , H01L29/66
CPC分类号： G01R33/1284 , B82Y10/00 , H01F41/32 , H01F41/325
摘要： A spin-filter for detection of angular momentum of electrons, wherein the spin-filter (1) comprises a substrate (10), provided with at least one membrane layer (12) having a first surface (11) and having a plurality of membranes (12n) coated with a magnetic thin-film (14), wherein the membranes (12n) comprises pores (13) having a magnetic thin-film (14) for transmission of electrons.
摘要翻译：一种用于检测电子角动量的自旋滤波器，其中所述自旋滤光器（1）包括衬底（10），所述衬底具有至少一个具有第一表面（11）并具有多个膜的膜层（12）（12n），其中膜（12n）包括具有用于透射电子的磁性薄膜（14）的孔（13）。

7. 发明申请

WO2006063007A2 METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：提供高纹理磁阻元件和磁记忆的方法和系统
公开(公告)号：WO2006063007A2
公开(公告)日：2006-06-15
申请号：PCT/US2005044180
申请日：2005-12-06
申请人： GRANDIS INC , PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
发明人： PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许穿过间隔层的隧穿。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

8. 发明申请

WO2002077657A1 MAGNETORESISTIVE SPIN-VALVE SENSOR AND MAGNETIC STORAGE APPARATUS 审中-公开
标题翻译：磁阻式传感器和磁性储存装置
公开(公告)号：WO2002077657A1
公开(公告)日：2002-10-03
申请号：PCT/JP2001/002261
申请日：2001-03-22
申请人： FUJITSU LIMITED , HONG, Jongill , KANAI, Hitoshi , KANE, Junichi , NOMA, Kenji
发明人： HONG, Jongill , KANAI, Hitoshi , KANE, Junichi , NOMA, Kenji
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F41/325 , Y10T428/1121 , Y10T428/1164 , Y10T428/1193
摘要： A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer.
摘要翻译：磁阻自旋阀传感器被构造为包括磁性层，由金属氧化物制成的镜面层，由Au，Cu或其合金构成的背层，并且介于磁性层和镜面层之间，金属层邻近镜面层设置，与背层相对。

9. 发明申请

WO00063715A1 SPIN VALVE SENSOR WITH SPECULAR ELECTRON SCATTERING IN FREE LAYER 审中-公开
标题翻译：旋转阀传感器，具有自由层中的电子散射
公开(公告)号：WO00063715A1
公开(公告)日：2000-10-26
申请号：PCT/US1999/020151
申请日：1999-09-02
IPC分类号： G01R33/09 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , H01F41/325
摘要： A spin valve sensor (70) is disclosed, comprising a ferromagnetic free layer (76), a ferromagnetic pinned layer (80), a layer of non-ferromagnetic material (78) positioned between the free layer (76) and the pinned layer (80), and an antiferromagnetic pinning layer (82) positioned adjacent to the pinned layer (80) such that the pinning layer (82) is in direct contact with the pinned layer (80). The free layer (76) comprises a multi-layer stack including a non-magnetic insulating spacer (96) positioned between a first and a second ferromagnetic sublayer (94 and 98). The non-magnetic insulating spacer (96) provides a specular electron scattering effect. The first and the second ferromagnetic sublayers (94 and 98) each have passive end regions separated by a central active region. The spin valve sensor (70) further includes bias means (86 and 88) positioned between the first and the second ferromagnetic sublayers (94 and 98) in the passive end regions. The bias means (86 and 88) produces a longitudinal bias in the passive end regions of a level sufficient to maintain the active central region of the ferromagnetic sublayers (94 and 98) in a single domain state.
摘要翻译：公开了一种自旋阀传感器（70），其包括铁磁性自由层（76），铁磁性钉扎层（80），位于自由层（76）和被钉扎层（80）之间的非铁磁材料层 80）和与钉扎层（80）相邻定位的反铁磁钉扎层（82），使得钉扎层（82）与钉扎层（80）直接接触。自由层（76）包括多层堆叠，其包括位于第一和第二铁磁性子层（94和98）之间的非磁性绝缘间隔物（96）。非磁性绝缘间隔物（96）提供镜面电子散射效应。第一和第二铁磁子层（94和98）各自具有被中心有源区分隔的被动端区域。自旋阀传感器（70）还包括位于无源端区域中的第一和第二铁磁子层（94和98）之间的偏置装置（86和88）。偏置装置（86和88）在被动端部区域中产生足以将铁磁子层（94和98）的活性中心区域维持在单一畴状态的水平面上的纵向偏压。

10. 发明申请

WO2015156727A1 SPIN OSCILLATOR DEVICE 审中-公开
标题翻译：旋转振荡器装置
公开(公告)号：WO2015156727A1
公开(公告)日：2015-10-15
申请号：PCT/SE2015/050410
申请日：2015-04-02
申请人： ÅKERMAN, Johan
发明人： ÅKERMAN, Johan
IPC分类号： H03B15/00 , G11C11/16 , H01F10/32 , H01L29/82
CPC分类号： H03B15/006 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01F10/3286 , H01F41/325 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H03L7/26
摘要： The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and magnetic droplet-skyrmions and report on their rich dynamical properties. Micromagnetic simulations identify the conditions necessary to nucleate and drive droplet-skyrmions over a wide range of currents and fields. Micromagnetic simulations also demonstrate how droplets and droplet-skyrmions can be used as skyrmion injectiors and detectors in skyrmion-based magnetic memories. The droplet-skyrmion can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, skyrmionics, and PMA-based domain-wall devices.
摘要翻译：本发明涉及在具有垂直磁各向异性（PMA）的磁性薄膜上使用纳米接触下的自旋转移转矩，提供了耗散的磁滴孤子和磁滴飞溅的产生，并报告了它们的丰富的动力特性。微电磁模拟确定了在宽范围的电流和场下成核和驱动液滴飞行所需的条件。微磁场模拟还证明了如何使用液滴和液滴滴定作为基于天线的磁存储器中的天线注入和检测器。可以使用电场和磁场来控制液滴滴定，并且预计可以应用于自旋电子学，磁学，电磁学和基于PMA的畴壁设备。

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