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1. 发明申请

WO99017286A1 NON-MECHANICAL RECORDING AND RETRIEVAL APPARATUS 审中-公开
标题翻译：非机械记录和检索装置
公开(公告)号：WO99017286A1
公开(公告)日：1999-04-08
申请号：PCT/US1998/020436
申请日：1998-09-30
IPC分类号： G11B7/00 , G11B9/10 , G11B11/11 , G11B11/115
CPC分类号： G11B9/10 , G11B7/00 , G11B11/11 , G11B11/115
摘要： A recording device is disclosed. The recording device (10) generates an electron beam (17) which selectively exposes portions of an electron-sensitive and/or UV light-sensitive film (28) to thereby record digital data on the film. A retrieval device is also disclosed. The retrieval device (100) selectively directs a generated electron beam (117) towards a predefined point on a target (131). The target is simultaneously exposed to a light pattern formed by shining UV light through exposed portions of an electron-sensitive and/or UV light-sensitive film (28) to thereby develop an output signal representative of digital data stored on the film at a location corresponding to the predefined point on the target.
摘要翻译：公开了一种记录装置。记录装置（10）产生电子束（17），其选择性地暴露电子敏感膜和/或UV感光膜（28）的部分，从而将数字数据记录在胶片上。还公开了检索装置。检索装置（100）选择性地将产生的电子束（117）引导到目标（131）上的预定点。目标同时暴露于通过照射紫外光通过电子敏感和/或UV感光膜（28）的暴露部分形成的光图案，从而在位置处形成表示存储在胶片上的数字数据的输出信号对应于目标上的预定义点。

2. 发明申请

WO99005675A1 DATA STORAGE ON A STORAGE MEDIUM 审中-公开
标题翻译： INFORMATIONSSPEICHRUNG存储媒介
公开(公告)号：WO99005675A1
公开(公告)日：1999-02-04
申请号：PCT/EP1998/004471
申请日：1998-07-18
IPC分类号： G11B5/00 , G11B5/09 , G11B7/0045 , G11B7/005 , G11B7/0055 , G11B7/013 , G11B9/00 , G11B11/105 , G11B11/11 , G11B20/14 , G11B7/00
CPC分类号： G11B11/10528 , G11B5/00 , G11B5/09 , G11B7/00451 , G11B7/00455 , G11B7/005 , G11B7/0055 , G11B7/24085 , G11B9/00 , G11B11/10504 , G11B11/10517 , G11B11/11 , G11B20/1496
摘要： The invention relates to a method for inscribing a storage medium (1) with digital data using high-energy radiation (4). The surface of the storage medium (1) can be divided into a plurality of systematically arranged storage locations (8, 9) and one storage location (8, 9) constitutes the smallest storage unit available to the system. The power transmitted onto a storage location (8, 9) by means of the high-energy radiation (4) is varied in more than two discrete power stages.
摘要翻译：本发明涉及一种通过高能辐射（4），其中所述存储介质（1）成多个系统的布置的存储位置中的所述表面（8,9）可被划分，并且其中存储器位置的装置描述的存储介质（1）的数字信息（8 ，9）是最小的到系统中可用的存储器单元，所述（通过高能辐射4）的一个位置（8手段，9）导致电力传输在两个以上的分立的功率电平是变化的。

3. 发明申请

WO01075894A2 QUANTUM MAGNETIC MEMORY 审中-公开
标题翻译：量子磁记忆
公开(公告)号：WO01075894A2
公开(公告)日：2001-10-11
申请号：PCT/US2001/008080
申请日：2001-03-13
IPC分类号： G11B5/00 , G11B11/11 , G11B11/115 , G11C11/16 , H01F10/32 , G11C
CPC分类号： B82Y25/00 , G11B5/00 , G11B11/11 , G11B11/115 , G11B2005/0002 , G11C11/16 , H01F10/32
摘要： A system for storing data on a magnetic medium (140) using spin polarized electron beams is provided. The system includes a source (110) of spin polarized electrons and a storage medium (140) disposed a selected distance from the source. The storage medium has a plurality of storage locations (160), each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system (120) directs the source of spin polarized electrons to one of the plurality of storage locations.
摘要翻译：提供一种使用自旋极化电子束在磁介质（140）上存储数据的系统。该系统包括自旋极化电子源（110）和设置在离源极选择距离处的存储介质（140）。存储介质具有多个存储位置（160），每个存储位置包括夹在半金属材料的第一和第二层之间的磁性材料层。所得到的夹层结构形成自旋相关电子阱，其增加第一自旋态中的束电子与第二自旋态的靶电子之间的耦合。电子光学系统（120）将自旋极化电子源引导到多个存储位置中的一个。

4. 发明申请

WO0175894A3 QUANTUM MAGNETIC MEMORY 审中-公开
标题翻译：量子磁记忆
公开(公告)号：WO0175894A3
公开(公告)日：2002-04-18
申请号：PCT/US0108080
申请日：2001-03-13
申请人： INTEL CORP , HANNAH ERIC C , BROWN MICHAEL A
发明人： HANNAH ERIC C , BROWN MICHAEL A
IPC分类号： G11B5/00 , G11B11/11 , G11B11/115 , G11C11/16 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/00 , G11B11/11 , G11B11/115 , G11B2005/0002 , G11C11/16 , H01F10/32
摘要： A system for storing data on a magnetic medium (140) using spin polarized electron beams is provided. The system includes a source (110) of spin polarized electrons and a storage medium (140) disposed a selected distance from the source. The storage medium has a plurality of storage locations (160), each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system (120) directs the source of spin polarized electrons to one of the plurality of storage locations.
摘要翻译：提供一种使用自旋极化电子束在磁介质（140）上存储数据的系统。该系统包括自旋极化电子源（110）和设置在离源极选择距离处的存储介质（140）。存储介质具有多个存储位置（160），每个存储位置包括夹在半金属材料的第一和第二层之间的磁性材料层。所得到的夹层结构形成自旋相关电子阱，其增加第一自旋态中的束电子与第二自旋态的靶电子之间的耦合。电子光学系统（120）将自旋极化电子源引导到多个存储位置中的一个。

5. 发明申请

WO1996009626A1 METHOD AND APPARATUS FOR STORING DATA USING SPIN-POLARIZED ELECTRONS 审中-公开
标题翻译：使用旋转极化电子存储数据的方法和装置
公开(公告)号：WO1996009626A1
公开(公告)日：1996-03-28
申请号：PCT/US1995011991
申请日：1995-09-21
申请人： TERASTORE, INC.
发明人： TERASTORE, INC. , HURT, Thomas, D. , HALPINE, Scott, A.
IPC分类号： G11B11/10
CPC分类号： G11B5/65 , G11B5/00 , G11B5/64 , G11B5/653 , G11B5/656 , G11B9/10 , G11B11/11 , G11B11/115 , G11B13/045 , G11B19/04 , G11B20/1883 , G11B23/28 , G11C11/02 , G11C11/23 , H01J3/02 , H01J31/60 , H01J2203/0296 , H01J2237/06383
摘要： A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
摘要翻译：一种数据存储装置，包括基板，基板上的数据存储层和自旋极化电子源。数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。在数据存储层中创建数据磁场。数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。通过提供具有电子磁场的自旋极化电子，数据存储在数据存储层中，该电子磁场具有与第一和第二数据值中的一个数据值相对应的极化方向，电子具有波长“特征”的不成对电子数据存储层，其引起材料的磁矩，并将自旋极化电子引导到数据磁场，以将电子磁场的极化方向赋予数据磁场。通过在数据磁场处引导第二波长的自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

6. 发明申请

WO1995020814A1 ULTRA THIN FILM MAGNETIC RECORDING MEDIUM AND RELATED METHOD AND APPARATUS FOR RECORDING AND REPRODUCING USING SPIN-POLARIZED ELECTRONS 审中-公开
标题翻译：超薄薄膜磁记录介质及使用旋转极化电子的记录和再现的相关方法和装置
公开(公告)号：WO1995020814A1
公开(公告)日：1995-08-03
申请号：PCT/US1995001013
申请日：1995-01-26
申请人： TERASTORE, INC.
发明人： TERASTORE, INC. , HURT, Thomas, D. , HALPINE, Scott, A.
IPC分类号： G11B11/10
CPC分类号： G11B5/65 , G11B5/00 , G11B5/64 , G11B5/653 , G11B5/656 , G11B9/10 , G11B11/11 , G11B11/115 , G11B13/045 , G11B19/04 , G11B20/1883 , G11B23/28 , G11C11/02 , G11C11/23 , H01J3/02 , H01J2203/0296 , H01J2237/06383
摘要： A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
摘要翻译：一种数据存储介质，包括形成在基板上的基板和数据存储层。数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。在数据存储层中创建数据磁场。数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到将电子磁场的极化方向赋予数据磁场。通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

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