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1. 发明申请

WO99005675A1 DATA STORAGE ON A STORAGE MEDIUM 审中-公开
标题翻译： INFORMATIONSSPEICHRUNG存储媒介
公开(公告)号：WO99005675A1
公开(公告)日：1999-02-04
申请号：PCT/EP1998/004471
申请日：1998-07-18
IPC分类号： G11B5/00 , G11B5/09 , G11B7/0045 , G11B7/005 , G11B7/0055 , G11B7/013 , G11B9/00 , G11B11/105 , G11B11/11 , G11B20/14 , G11B7/00
CPC分类号： G11B11/10528 , G11B5/00 , G11B5/09 , G11B7/00451 , G11B7/00455 , G11B7/005 , G11B7/0055 , G11B7/24085 , G11B9/00 , G11B11/10504 , G11B11/10517 , G11B11/11 , G11B20/1496
摘要： The invention relates to a method for inscribing a storage medium (1) with digital data using high-energy radiation (4). The surface of the storage medium (1) can be divided into a plurality of systematically arranged storage locations (8, 9) and one storage location (8, 9) constitutes the smallest storage unit available to the system. The power transmitted onto a storage location (8, 9) by means of the high-energy radiation (4) is varied in more than two discrete power stages.
摘要翻译：本发明涉及一种通过高能辐射（4），其中所述存储介质（1）成多个系统的布置的存储位置中的所述表面（8,9）可被划分，并且其中存储器位置的装置描述的存储介质（1）的数字信息（8 ，9）是最小的到系统中可用的存储器单元，所述（通过高能辐射4）的一个位置（8手段，9）导致电力传输在两个以上的分立的功率电平是变化的。

2. 发明申请

WO01075894A2 QUANTUM MAGNETIC MEMORY 审中-公开
标题翻译：量子磁记忆
公开(公告)号：WO01075894A2
公开(公告)日：2001-10-11
申请号：PCT/US2001/008080
申请日：2001-03-13
IPC分类号： G11B5/00 , G11B11/11 , G11B11/115 , G11C11/16 , H01F10/32 , G11C
CPC分类号： B82Y25/00 , G11B5/00 , G11B11/11 , G11B11/115 , G11B2005/0002 , G11C11/16 , H01F10/32
摘要： A system for storing data on a magnetic medium (140) using spin polarized electron beams is provided. The system includes a source (110) of spin polarized electrons and a storage medium (140) disposed a selected distance from the source. The storage medium has a plurality of storage locations (160), each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system (120) directs the source of spin polarized electrons to one of the plurality of storage locations.
摘要翻译：提供一种使用自旋极化电子束在磁介质（140）上存储数据的系统。该系统包括自旋极化电子源（110）和设置在离源极选择距离处的存储介质（140）。存储介质具有多个存储位置（160），每个存储位置包括夹在半金属材料的第一和第二层之间的磁性材料层。所得到的夹层结构形成自旋相关电子阱，其增加第一自旋态中的束电子与第二自旋态的靶电子之间的耦合。电子光学系统（120）将自旋极化电子源引导到多个存储位置中的一个。

3. 发明申请

WO02084647A3 ANTIFERROMAGNETIC LAYER SYSTEM AND METHODS FOR MAGNETICALLY STORING DATA IN ANTIFERROMAGNETIC LAYER SYSTEMS OF THE LIKE 审中-公开
标题翻译：反铁磁层系统和用于这种反铁磁层系统中的磁数据存储的方法
公开(公告)号：WO02084647A3
公开(公告)日：2003-07-31
申请号：PCT/DE0201301
申请日：2002-04-05
申请人： LEIBNIZ INST FUER FESTKOERPER , DE HAAS OLIVER , SCHAEFER RUDOLF , SCHNEIDER CLAUS
发明人： DE HAAS OLIVER , SCHAEFER RUDOLF , SCHNEIDER CLAUS
IPC分类号： G11B5/00 , G11B5/02 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/738 , G11B5/74 , G11B7/135 , G11B9/00 , G11B11/10 , G11B11/105 , H01F10/14 , H01F10/26 , H01F10/32 , H01F41/30 , G11B5/012 , G11B5/851 , G11B5/852 , G11B11/11
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/65 , G11B5/66 , G11B5/74 , G11B7/1387 , G11B9/1409 , G11B11/10504 , G11B11/10515 , G11B11/10532 , G11B11/10584 , G11B11/10586 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , H01F10/3218 , H01F41/302 , Y10T428/32
摘要： The invention is used in the field of materials engineering and relates to antiferromagnetic layer systems as well as to methods for magnetically storing data that can be used, for example, in computer hard disks. The aim of the invention consists of providing an antiferromagnetic layer system and methods with which a specific writing and reading of information is made possible in antiferromagnetic layer systems of the aforementioned type. To this end, an antiferromagnetic layer system is provided, which consists of at least one ferromagnetic (1) and of at least one antiferromagnetic layer (2), whereby the Curie temperature of the ferromagnetic layer material is greater than the blocking temperature of the antiferromagnetic layer material. In addition, the ferromagnetic and antiferromagnetic layer(s) are coupled to one another at least with regard to their magnetization configurations by means of exchange anisotropy effects, and the layer thickness of the antiferromagnetic layer(s) is a function of the operating temperature of the employed antiferromagnetic layer system, whereby the layer thicknesses also increase with increasing operating temperatures.
摘要翻译：其中本发明涉及材料技术领域，涉及反铁磁性层的系统和方法用于磁存储数据，这是，例如，在计算机硬盘对于本发明的使用können.Die目的通过装置提供的反铁磁性层系统和方法的选择性写入和在这样的反铁磁性层系统ist.Gelöst可能的对象读出信息通过由至少一个铁磁1和至少一个反铁磁性层2，其中，材料的上面的反铁磁层的材料的阻塞温度的铁磁性层的居里温度是在反铁磁性层系统，并铁磁层和反铁磁层至少相对于它们的磁化构型通过交换各向异性效应耦合在一起，并且在d 反铁磁层的层厚度是所用反铁磁层系统的工作温度的函数，层厚也随着工作温度的增加而增加。

4. 发明申请

WO99017286A1 NON-MECHANICAL RECORDING AND RETRIEVAL APPARATUS 审中-公开
标题翻译：非机械记录和检索装置
公开(公告)号：WO99017286A1
公开(公告)日：1999-04-08
申请号：PCT/US1998/020436
申请日：1998-09-30
IPC分类号： G11B7/00 , G11B9/10 , G11B11/11 , G11B11/115
CPC分类号： G11B9/10 , G11B7/00 , G11B11/11 , G11B11/115
摘要： A recording device is disclosed. The recording device (10) generates an electron beam (17) which selectively exposes portions of an electron-sensitive and/or UV light-sensitive film (28) to thereby record digital data on the film. A retrieval device is also disclosed. The retrieval device (100) selectively directs a generated electron beam (117) towards a predefined point on a target (131). The target is simultaneously exposed to a light pattern formed by shining UV light through exposed portions of an electron-sensitive and/or UV light-sensitive film (28) to thereby develop an output signal representative of digital data stored on the film at a location corresponding to the predefined point on the target.
摘要翻译：公开了一种记录装置。记录装置（10）产生电子束（17），其选择性地暴露电子敏感膜和/或UV感光膜（28）的部分，从而将数字数据记录在胶片上。还公开了检索装置。检索装置（100）选择性地将产生的电子束（117）引导到目标（131）上的预定点。目标同时暴露于通过照射紫外光通过电子敏感和/或UV感光膜（28）的暴露部分形成的光图案，从而在位置处形成表示存储在胶片上的数字数据的输出信号对应于目标上的预定义点。

5. 发明申请

WO02084647A8 ANTIFERROMAGNETIC LAYER SYSTEM AND METHODS FOR MAGNETICALLY STORING DATA IN ANTIFERROMAGNETIC LAYER SYSTEMS OF THE LIKE 审中-公开
标题翻译：反铁磁层体系和方法，此类反铁磁性层系统的磁性数据存储
公开(公告)号：WO02084647A8
公开(公告)日：2003-09-12
申请号：PCT/DE0201301
申请日：2002-04-05
申请人： LEIBNIZ INST FUER FESTKOERPER , DE HAAS OLIVER , SCHAEFER RUDOLF , SCHNEIDER CLAUS
发明人： DE HAAS OLIVER , SCHAEFER RUDOLF , SCHNEIDER CLAUS
IPC分类号： G11B5/00 , G11B5/02 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/738 , G11B5/74 , G11B7/135 , G11B9/00 , G11B11/10 , G11B11/105 , H01F10/14 , H01F10/26 , H01F10/32 , H01F41/30 , G11B5/012 , G11B5/851 , G11B5/852 , G11B11/11
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/00 , G11B5/65 , G11B5/66 , G11B5/74 , G11B7/1387 , G11B9/1409 , G11B11/10504 , G11B11/10515 , G11B11/10532 , G11B11/10584 , G11B11/10586 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , H01F10/3218 , H01F41/302 , Y10T428/32
摘要： The invention is used in the field of materials engineering and relates to antiferromagnetic layer systems as well as to methods for magnetically storing data that can be used, for example, in computer hard disks. The aim of the invention consists of providing an antiferromagnetic layer system and methods with which a specific writing and reading of information is made possible in antiferromagnetic layer systems of the aforementioned type. To this end, an antiferromagnetic layer system is provided, which consists of at least one ferromagnetic (1) and of at least one antiferromagnetic layer (2), whereby the Curie temperature of the ferromagnetic layer material is greater than the blocking temperature of the antiferromagnetic layer material. In addition, the ferromagnetic and antiferromagnetic layer(s) are coupled to one another at least with regard to their magnetization configurations by means of exchange anisotropy effects, and the layer thickness of the antiferromagnetic layer(s) is a function of the operating temperature of the employed antiferromagnetic layer system, whereby the layer thicknesses also increase with increasing operating temperatures.
摘要翻译：其中本发明涉及材料技术领域，涉及反铁磁性层的系统和方法用于磁存储数据，这是，例如，在计算机硬盘对于本发明的使用können.Die目的通过装置提供的反铁磁性层系统和方法的选择性写入和在这样的反铁磁性层系统ist.Gelöst可能的对象读出信息通过由至少一个铁磁1和至少一个反铁磁性层2，其中，材料的上面的反铁磁层的材料的阻塞温度的铁磁性层的居里温度是在反铁磁性层系统，并铁磁和反铁磁层由Austauschanisotropieeffekte彼此至少相对于它们的磁化配置耦合，并且其中D EM反铁磁性层的层厚度为采用的反铁磁性层系统的操作温度，由此，随着操作温度下，层厚度也增加的函数。

6. 发明申请

WO0175894A3 QUANTUM MAGNETIC MEMORY 审中-公开
标题翻译：量子磁记忆
公开(公告)号：WO0175894A3
公开(公告)日：2002-04-18
申请号：PCT/US0108080
申请日：2001-03-13
申请人： INTEL CORP , HANNAH ERIC C , BROWN MICHAEL A
发明人： HANNAH ERIC C , BROWN MICHAEL A
IPC分类号： G11B5/00 , G11B11/11 , G11B11/115 , G11C11/16 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/00 , G11B11/11 , G11B11/115 , G11B2005/0002 , G11C11/16 , H01F10/32
摘要： A system for storing data on a magnetic medium (140) using spin polarized electron beams is provided. The system includes a source (110) of spin polarized electrons and a storage medium (140) disposed a selected distance from the source. The storage medium has a plurality of storage locations (160), each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system (120) directs the source of spin polarized electrons to one of the plurality of storage locations.
摘要翻译：提供一种使用自旋极化电子束在磁介质（140）上存储数据的系统。该系统包括自旋极化电子源（110）和设置在离源极选择距离处的存储介质（140）。存储介质具有多个存储位置（160），每个存储位置包括夹在半金属材料的第一和第二层之间的磁性材料层。所得到的夹层结构形成自旋相关电子阱，其增加第一自旋态中的束电子与第二自旋态的靶电子之间的耦合。电子光学系统（120）将自旋极化电子源引导到多个存储位置中的一个。

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