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    • 2. 发明申请
    • SELECTIVE METAL/METAL OXIDE ETCH PROCESS
    • 选择性金属/金属氧化物蚀刻工艺
    • WO2015108842A1
    • 2015-07-23
    • PCT/US2015/011130
    • 2015-01-13
    • SACHEM, INC.
    • VERMEULEN, PaulALLEN, Craig
    • C23F1/34C23F1/36C23F1/38H01L21/3213
    • H01L21/44C23F1/34C23F1/36C23F1/38H01L21/32134H01L29/45H01L29/66969H01L29/7869
    • The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate comprising a layer of oxide semiconductor and a layer comprising molybdenum or titanium on the layer of oxide semiconductor; preparing the substrate by applying a photoresist layer over the layer comprising molybdenum or titanium, and then patterning and developing the photoresist layer to form an exposed portion of the layer comprising molybdenum or titanium; providing a composition comprising ammonia or ammonium hydroxide, a quaternary ammonium hydroxide and a peroxide; and applying the composition to the exposed portion for a time sufficient to etch and remove the exposed portion of the layer comprising molybdenum or titanium, wherein the etching selectively removes the molybdenum or titanium relative to the oxide semiconductor.
    • 本发明提供了一种相对于氧化物半导体膜选择性地蚀刻钼或钛的方法,包括在氧化物半导体层上提供包括氧化物半导体层和包含钼或钛的层的衬底; 通过在包含钼或钛的层上施加光致抗蚀剂层,然后对光致抗蚀剂层进行图案化和显影以形成包含钼或钛的层的暴露部分来制备衬底; 提供包含氨或氢氧化铵,氢氧化季铵和过氧化物的组合物; 以及将组合物施加到暴露部分足以蚀刻和去除包含钼或钛的层的暴露部分的时间,其中蚀刻相对于氧化物半导体选择性地除去钼或钛。
    • 5. 发明申请
    • PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREFOR
    • 光伏器件及其制造方法
    • WO2008102172A1
    • 2008-08-28
    • PCT/GB2008/050108
    • 2008-02-20
    • RUCHAT, David John
    • RUCHAT, David John
    • H01L31/0224H01L31/20C23F1/36
    • C23F1/02C23F1/36H01L31/0468Y02E10/50
    • A method of etching a semiconductor device consisting of a substrate, optionally one or more base electrode layers, a silicon layer, and at least one backside electrode layer is disclosed. The method involves the steps of : applying a resist layer to the backside electrode layer and selectively removing portions thereof to expose discrete areas of the underlying backside electrode layer and etching away both the backside electrode layer and the underlying silicon layer in said discrete areas. The method is characterised in that: i. the resist layer is a polymeric alkalophobe composition, portions thereof being selectively removed by means of an acidic developer; ii. the backside electrode layer(s) are of a material which is resistant to said acidic developer, which is rinsed from the device after developing said portions of said resist layer, and iii. the etching of both said backside electrode layer and said silicon layer is conducted sequentially using the same alkaline etchant. The invention has particular application to the production of photovoltaic cells for generating electricity when exposed to light, and to flat panel displays for generating light when electricity is applied to the active substrate therein.
    • 公开了一种蚀刻由衬底,可选地一个或多个基极电极层,硅层和至少一个背面电极层组成的半导体器件的方法。 该方法包括以下步骤:将抗蚀剂层施加到背面电极层,并选择性地去除其部分以暴露下面的背面电极层的离散区域,并蚀刻掉所述离散区域中的背面电极层和下面的硅层。 该方法的特征在于:i。 抗蚀剂层是聚合物基团组合物,其部分通过酸性显影剂选择性地除去; II。 背面电极层是对所述酸性显影剂具有耐受性的材料,其在显影所述抗蚀剂层的所述部分之后从该器件冲洗,以及iii。 使用相同的碱性蚀刻剂依次进行对所述背面电极层和所述硅层的蚀刻。 本发明特别适用于在暴露于光时产生电力的光伏电池的生产,以及用于在向其中的有源衬底施加电力时产生光的平板显示器。