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1. 发明申请

WO2012156858A3 DEVICE AND PROCESS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES 审中-公开
标题翻译：用于液体处理成形文章的装置和方法
公开(公告)号：WO2012156858A3
公开(公告)日：2015-08-13
申请号：PCT/IB2012052239
申请日：2012-05-04
申请人： LAM RES AG , LAM RES CORP , PUGGL MICHAEL , AUFEGGER CHRISTIAN , HOHENWARTER KARL-HEINZ
发明人： PUGGL MICHAEL , AUFEGGER CHRISTIAN , HOHENWARTER KARL-HEINZ
IPC分类号： H01L21/67
CPC分类号： H01L21/68721 , H01L21/6715 , Y10T29/49998 , Y10T279/20
摘要： A spin chuck and a process of operating the same display improved resistance to backsplash by provision of a media collecting ring mounted on the spin chuck. The media collecting ring surrounds a wafer to be processed and includes a radially-inwardly extending upper portion having an obliquely-angled downwardly-facing surface positioned above an upper surface of a wafer held in the device. The device moreover includes a stationary chamber surrounding the spin chuck equipped with at least two superposed collecting baffles. During treatment, liquid collected by the media collecting ring is preferably discharged radially outwardly through a series of holes formed in the ring, so as to pass between a pair of the superposed collecting baffles of the chamber.
摘要翻译：旋转卡盘和操作相同显示器的过程通过提供安装在旋转卡盘上的介质收集环来提高对后挡板的抵抗力。介质收集环围绕要处理的晶片，并且包括径向向内延伸的上部，其具有位于装置中保持的晶片的上表面上方的倾斜向下的面向表面。该装置还包括围绕旋转卡盘的固定室，其配备有至少两个重叠的收集挡板。在处理期间，介质收集环收集的液体优选通过形成在环中的一系列孔径向向外排出，以便在室的一对叠置收集挡板之间通过。

2. 发明申请

WO2013070472A3 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：WO2013070472A3
公开(公告)日：2015-06-11
申请号：PCT/US2012062867
申请日：2012-10-31
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
IPC分类号： C23C14/34
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

3. 发明申请

WO2013035019A3 APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES 审中-公开
标题翻译：用于处理波浪形文章表面的装置
公开(公告)号：WO2013035019A3
公开(公告)日：2014-10-30
申请号：PCT/IB2012054440
申请日：2012-08-29
申请人： LAM RES AG , LAM RES CORP , TSCHINDERLE ULRICH , GLEISSNER ANDREAS , WIRNSBERGER THOMAS , OBWEGER RAINER
发明人： TSCHINDERLE ULRICH , GLEISSNER ANDREAS , WIRNSBERGER THOMAS , OBWEGER RAINER
IPC分类号： H01L21/20 , H01L21/683 , H01L21/687
CPC分类号： H01L21/68785 , H01L21/67023 , H01L21/67051 , H01L21/6708 , H01L21/6719 , Y10T279/3493
摘要： A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.
摘要翻译：用于处理晶片状制品的装置包括封闭的处理室。封闭的处理室包括提供气密外壳的外壳，位于封闭的处理室内的适于在其上保持晶片成形制品的旋转卡盘以及设置在所述封闭处理室内的内盖。内盖可以在第一位置和第二位置之间移动，在第一位置，旋转卡盘与封闭的处理室的外壁连通;第二位置，其中内盖密封靠近旋转卡盘的封闭处理室的内表面，以限定一个气密的内部处理室。

4. 发明申请

WO2013098702A3 MIXED MODE PULSING ETCHING IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：等离子体处理系统中的混合模式脉冲蚀刻
公开(公告)号：WO2013098702A3
公开(公告)日：2014-01-09
申请号：PCT/IB2012057385
申请日：2012-12-17
申请人： LAM RES CORP , LAM RES AG
发明人： JACOBS KANARIK KEREN
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32449 , H01J2237/334
摘要： A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method, steps a plurality of times.
摘要翻译：一种在腔室中处理衬底的方法，其具有至少一个等离子体产生源，用于将反应气体提供到腔室的内部区域中的反应气体源，以及用于将非反应性气体提供到内部的非反应性气体源区域。该方法包括执行混合模式脉冲（MMP）制备阶段，包括将活性气体流入内部区域并形成第一等离子体以处理设置在工件保持器上的基底。该方法还包括执行MMP反应相，包括将至少非反应性气体流入内部区域，以及形成第二等离子体以处理该基底，在MMP反应阶段期间，第二等离子体由反应气流形成，在MMP制备期间小于反应气流。执行该方法，步骤多次。

5. 发明申请

WO2013151804A8 INSTALLATION FIXTURE FOR ELASTOMER BANDS AND METHODS OF USING THE SAME 审中-公开
标题翻译：弹性体的安装方式及其使用方法
公开(公告)号：WO2013151804A8
公开(公告)日：2013-12-19
申请号：PCT/US2013033436
申请日：2013-03-22
申请人： LAM RES CORP
发明人： NEWTON NEAL
IPC分类号： H01L21/50
CPC分类号： H01J37/32495 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/68721 , H01L21/68735 , H01L21/68785 , Y10T29/4987 , Y10T29/53657 , Y10T29/53722
摘要： A method of installing an elastomer band as a protective edge seal around a portion of a semiconductor substrate support used for supporting a semiconductor substrate in a plasma processing chamber, which includes expanding an elastomer band into a circular shape having a diameter greater than a diameter of a mounting groove within the substrate support; clamping the elastomer band in the expanded shape between a base ring and a clamp ring; placing the elastomer band over the substrate support in the expanded shape; and releasing the elastomer band from between the base and clamp rings, which contracts the elastomer band into the mounting groove of the substrate support.
摘要翻译：将用于在等离子体处理室中支撑半导体衬底的用于支撑半导体衬底的半导体衬底支架的一部分周围安装弹性体带作为保护性边缘密封的方法，其包括将弹性体带扩展为直径大于衬底支撑件内的安装槽; 将弹性体带在扩张形状的基座环和夹紧环之间夹紧; 将弹性体带放置在基板支撑件上方的展开形状中; 并从基座和夹紧环之间释放弹性体带，弹性带将弹性体带收缩到基板支撑件的安装槽中。

6. 发明申请

WO2012154454A2 MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL 审中-公开
标题翻译：减少水分上的硅化物形成
公开(公告)号：WO2012154454A2
公开(公告)日：2012-11-15
申请号：PCT/US2012036018
申请日：2012-05-01
申请人： LAM RES CORP , FISCHER ANDREAS , BASS WILLIAM SCOTT
发明人： FISCHER ANDREAS , BASS WILLIAM SCOTT
IPC分类号： H01L21/3065
CPC分类号： H01L21/02274 , H01L21/28097 , H01L21/28518 , H01L29/517
摘要： A method for preventing formation of metal silicide material on a wafer bevel is provided, where the wafer bevel surrounds a central region of the wafer. The wafer is placed in bevel plasma processing chamber. A protective layer is deposited on the wafer bevel. The wafer is removed from the bevel plasma processing chamber. A metal layer is deposited over at least part of the central region of the wafer, wherein part of the metal layer is deposited over the protective layer. Semiconductor devices are formed while preventing metal silicide formation on the wafer bevel.
摘要翻译：提供了一种用于防止在晶片斜面上形成金属硅化物材料的方法，其中晶片斜面围绕晶片的中心区域。将晶片放置在斜面等离子体处理室中。保护层沉积在晶片斜面上。从斜面等离子体处理室移除晶片。金属层沉积在晶片的中心区域的至少一部分上，其中金属层的一部分沉积在保护层上。形成半导体器件，同时防止在晶片斜面上形成金属硅化物。

7. 发明申请

WO2012039744A3 PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体加工釜的等离子体配料环组件
公开(公告)号：WO2012039744A3
公开(公告)日：2012-08-23
申请号：PCT/US2011001501
申请日：2011-08-25
申请人： LAM RES CORP , DE LA LLERA ANTHONY , CARMAN DAVID , TAYLOR TRAVIS R , ULLAL SAURABH J , SINGH HARMEET
发明人： DE LA LLERA ANTHONY , CARMAN DAVID , TAYLOR TRAVIS R , ULLAL SAURABH J , SINGH HARMEET
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件。组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。间隔套环绕悬挂架的下部并且安装在衣架孔的下部。垫圈安装在衣架的扩大头部和下环的下表面之间。间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

8. 发明申请

WO2012030382A3 SHOWERHEAD ELECTRODE 审中-公开
标题翻译：喷头电极
公开(公告)号：WO2012030382A3
公开(公告)日：2012-08-23
申请号：PCT/US2011001500
申请日：2011-08-25
申请人： LAM RES CORP , DE LA LLERA ANTHONY , MANKIDY PRATIK , KELLOGG MICHAEL C , DHINDSA RAJINDER
发明人： DE LA LLERA ANTHONY , MANKIDY PRATIK , KELLOGG MICHAEL C , DHINDSA RAJINDER
IPC分类号： H01L21/3065 , H01L21/205 , H05H1/46
CPC分类号： H01R13/20
摘要： Abstract A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.
摘要翻译：摘要在等离子体反应室中用于蚀刻半导体衬底的喷头电极，衬垫组件及其组件提供了改进的气体喷射孔图案，定位精度和减少的翘曲，这导致等离子体处理速率的均匀性提高。将内部电极和垫圈组装到支撑构件上的方法包括同时接合凸轮锁。

9. 发明申请

WO2012036923A3 METHODS FOR CONTROLLING PLASMA CONSTITUENT FLUX AND DEPOSITION DURING SEMICONDUCTOR FABRICATION AND APPARATUS FOR IMPLEMENTING THE SAME 审中-公开
标题翻译：用于控制半导体制造期间等离子体成分通量和沉积的方法以及实现该方法的装置
公开(公告)号：WO2012036923A3
公开(公告)日：2012-05-31
申请号：PCT/US2011050379
申请日：2011-09-02
申请人： LAM RES CORP , DHINDSA RAJINDER
发明人： DHINDSA RAJINDER
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , C23F1/08 , G05B19/418 , G05B2219/45031 , G05B2219/45212 , H01J37/32935 , H01L21/31116 , H01L21/31144 , H01L21/67248
摘要： A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time- dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.
摘要翻译：确定在等离子体处理期间施加的时间依赖的衬底温度。基于在给定时间对等离子体成分的粘着系数的控制来确定在任何给定时间的时间依赖的衬底温度。还确定了在等离子体处理期间将施加的上部等离子体边界与衬底之间的时间依赖性温度差。基于在给定时间控制指向衬底的等离子体成分的通量来确定在任何给定时间的随时间变化的温差。取决于时间的衬底温度和时间依赖的温度差以适合由定义的温度控制装置使用的数字格式存储并连接到上部等离子体边界和衬底的直接温度控制。还提供了用于在等离子体处理期间实现上部等离子体边界和衬底温度控制的系统。

10. 发明申请

WO2011146108A3 MOVABLE CHAMBER LINER PLASMA CONFINEMENT SCREEN COMBINATION FOR PLASMA PROCESSING APPARATUSES 审中-公开
标题翻译：可移动的室内等离子体处理装置的屏幕组合
公开(公告)号：WO2011146108A3
公开(公告)日：2012-04-05
申请号：PCT/US2011000857
申请日：2011-05-13
申请人： LAM RES CORP , BROWN DANNY , SHARPLESS LEONARD
发明人： BROWN DANNY , SHARPLESS LEONARD
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , B23K20/122 , H01J37/32495 , H01J37/32623 , Y10T29/49117 , Y10T29/49826 , Y10T29/49888
摘要： A movable symmetric chamber liner in a plasma reaction chamber, for protecting the plasma reaction chamber, enhancing the plasma density and uniformity, and reducing process gas consumption, comprising a cylindrical wall, a bottom wall with a plurality of openings, a raised inner rim with an embedded heater, heater contacts, and RF ground return contacts. The chamber liner is moved by actuators between an upper position at which substrates can be transferred into and out of the chamber, and a lower position at which substrate are processed in the chamber. The actuators also provide electrical connection to the heater and RF ground return contacts.
摘要翻译：在等离子体反应室中的可移动的对称室衬套，用于保护等离子体反应室，增强等离子体密度和均匀性，并减少工艺气体消耗，包括圆柱形壁，具有多个开口的底壁，嵌入式加热器，加热器触点和RF接地返回触点。腔室衬垫由致动器在衬底可以被转移到腔室中的上部位置和在腔室中被处理衬底的下部位置之间移动。致动器还提供与加热器和RF接地返回触点的电连接。

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