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1. 发明申请

WO2013070472A3 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：WO2013070472A3
公开(公告)日：2015-06-11
申请号：PCT/US2012062867
申请日：2012-10-31
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
IPC分类号： C23C14/34
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

2. 发明申请

WO2008010943A3 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 审中-公开
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：WO2008010943A3
公开(公告)日：2009-04-09
申请号：PCT/US2007015928
申请日：2007-07-13
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

3. 发明申请

WO2006104841B1 METHODS AND APPARATUS FOR DETERMINING THE ENDPOINT OF A CLEANING OR CONDITIONING PROCESS IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于确定等离子体处理系统中的清洁或调节过程的端点的方法和装置
公开(公告)号：WO2006104841B1
公开(公告)日：2008-02-21
申请号：PCT/US2006010576
申请日：2006-03-24
申请人： LAM RES CORP , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
发明人： HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
IPC分类号： B05C11/00 , B05C13/00 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
摘要翻译：公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

4. 发明申请

WO2007001838A3 METHODS AND APPARATUS FOR IGNITING A LOW PRESSURE PLASMA 审中-公开
标题翻译：用于点燃低压等离子体的方法和设备
公开(公告)号：WO2007001838A3
公开(公告)日：2008-07-17
申请号：PCT/US2006023042
申请日：2006-06-13
申请人： LAM RES CORP , HUDSON ERIC , MARAKHTANOV ALEXEI
发明人： HUDSON ERIC , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32009 , H01J37/321
摘要： In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.
摘要翻译：在具有等离子体处理室，至少一个通电电极和点火电极的等离子体处理系统中，公开了一种用于点燃等离子体的方法。该方法包括将衬底引入到等离子体处理室中。该方法还包括使气体混合物流入等离子体处理室; 以点火频率激励点火电极; 并用点火电极从气体混合物中打出等离子体。该方法还包括用目标频率激励至少一个带电电极，其中击打频率大于目标频率; 并在处理等离子体处理室中的衬底的同时使点火电极断电。

5. 发明申请

WO2008008259A2 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
标题翻译：用于控制等离子体潜能的装置和方法
公开(公告)号：WO2008008259A2
公开(公告)日：2008-01-17
申请号：PCT/US2007015509
申请日：2007-07-06
申请人： LAM RES CORP , KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
发明人： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

6. 发明申请

WO2005062885A3 SELECTIVITY CONTROL IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：WO2005062885A3
公开(公告)日：2006-09-28
申请号：PCT/US2004043115
申请日：2004-12-21
申请人： LAM RES CORP , TAKESHITA KENJI , TURMEL ODETTE , KOZAKEVICH FELIX , HUDSON ERIC
发明人： TAKESHITA KENJI , TURMEL ODETTE , KOZAKEVICH FELIX , HUDSON ERIC
IPC分类号： H01L21/311 , H01L21/768 , H01L23/48 , H01L21/302 , H01L21/44
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76811
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate. The bias RF signal has a bias RF frequency of between about 27 MHz and about 75 MHz and a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold or configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号。偏置RF信号具有在约27MHz至约75MHz之间的偏置RF频率以及被配置为使蚀刻特征被蚀刻的偏压RF功率分量，其中衬底的第二层的蚀刻选择性高于预定义的选择性阈值或者被配置为根据预定的蚀刻速率参数和偏置RF频率下的蚀刻轮廓参数来对特征进行蚀刻。

7. 发明申请

WO2010117969A3 MODULATED MULTI-FREQUENCY PROCESSING METHOD 审中-公开
标题翻译：调制多频处理方法
公开(公告)号：WO2010117969A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030019
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
发明人： MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
IPC分类号： H01L21/3065 , H05H1/24 , H05H1/36
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

8. 发明申请

WO2010080421A4 CONTROLLING ION ENERGY DISTRIBUTION IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：控制等离子体处理系统中的离子能量分布
公开(公告)号：WO2010080421A4
公开(公告)日：2010-10-07
申请号：PCT/US2009068186
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , HUDSON ERIC
发明人： FISCHER ANDREAS , HUDSON ERIC
IPC分类号： H05H1/36 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32091
摘要： A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.
摘要翻译：用等离子体处理至少一个衬底的等离子体处理系统。等离子体处理室能够控制离子能量分布。等离子体处理系统可以包括第一电极。等离子体处理系统还包括第二电极，该第二电极不同于第一电极并被配置用于承载衬底。等离子体处理系统还可以包括与第一电极耦合的信号源。当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号，以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

9. 发明申请

WO2006104841A2 METHODS AND APPARATUS FOR DETERMINING THE ENDPOINT OF A CLEANING OR CONDITIONING PROCESS IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于确定等离子体处理系统中的清洁或调节过程的端点的方法和装置
公开(公告)号：WO2006104841A2
公开(公告)日：2006-10-05
申请号：PCT/US2006010576
申请日：2006-03-24
申请人： LAM RES CORP , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
发明人： HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
IPC分类号： C23C16/52 , B05C11/00 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
摘要翻译：公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

10. 发明申请

WO2013036371A2 PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION 审中-公开
标题翻译：双室配置中的脉冲等离子体室
公开(公告)号：WO2013036371A2
公开(公告)日：2013-03-14
申请号：PCT/US2012051460
申请日：2012-08-17
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
IPC分类号： H01L21/3065 , C23F1/08 , H01L21/306
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/32825 , H01J2237/3341 , H01L21/31116 , H01L21/67069
摘要： Systems, methods, and computer programs for processing a semiconductor substrate in a pulsed plasma chamber in a dual chamber configuration are provided. A wafer processing apparatus with a top chamber and a bottom chamber separated by a plate that fluidly connects the top chamber to the bottom chamber includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller is operable to set the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode in the top chamber. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode in the bottom chamber. Further, the system controller is operable to set parameters for the CW controller and the pulse controller to regulate the flow of species from the top chamber to the bottom chamber through the plate during operation of the chamber. The flow of species assists in the negative-ion etching and in neutralizing excessive positive charge on the wafer surface during afterglow in the OFF period, and assists in the re- striking of the plasma in the bottom chamber during the ON period.
摘要翻译：提供了用于在双室配置中处理脉冲等离子体室中的半导体衬底的系统，方法和计算机程序。具有通过将顶部腔室与底部腔室流体连接的板分隔开的顶部腔室和底部腔室的晶片处理装置包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器可操作地设置耦合到顶部室中顶部电极的第一射频（RF）电源的电压和频率。脉冲控制器可操作地为耦合到底部室中的底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。此外，系统控制器可操作以设置CW控制器和脉冲控制器的参数，以调节在室的操作期间物种从顶室到底室通过板的流动。物质的流动有助于负离子蚀刻，并且在关闭期间在余辉期间中和晶片表面上的过量正电荷，并且有助于在接通期间等离子体在底室中的重新打开。

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