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1. 发明申请

WO2017196792A1 COMPACT LASER SOURCE WITH WAVELENGTH STABILIZED OUTPUT 审中-公开
标题翻译：具有波长稳定输出的紧凑型激光光源
公开(公告)号：WO2017196792A1
公开(公告)日：2017-11-16
申请号：PCT/US2017/031671
申请日：2017-05-09
申请人： II-VI INCORPORATED
发明人： ZAYER, Nadhum Kadhum
IPC分类号： H01S3/136 , G02B6/02
CPC分类号： H01S3/108 , G02B6/0208 , G02B6/4201 , G02B6/424 , G02B6/4248 , G02B6/4251 , G02B6/4256 , G02B6/4257 , G02B6/4269 , G02B6/4277 , H01S3/067 , H01S5/02216 , H01S5/02252 , H01S5/02284 , H01S5/0287 , H01S5/0687 , H01S5/101 , H01S5/1085 , H01S5/1212 , H01S5/141 , H01S5/146
摘要： A compact, wavelength-stabilized laser source is provided by utilizing a specialty gain element (i.e., formed to include a curved waveguide topology), where a separate wavelength stabilization component (for example, a fiber Bragg grating (FBG)) is used one of the mirrors for the laser cavity. That is, the FBG takes the place of the physical "front facet" of the gain element, and functions to define the laser cavity in the first instance, while also utilizing the grating structure to impart the desired wavelength stability to the output from the packaged laser source. As a result, the FBG is disposed within the same package used to house the gain element and provides a wavelength-stabilized laser source in a compact form.
摘要翻译：通过利用专用增益元件（即，形成为包括弯曲的波导拓扑）来提供紧凑的波长稳定的激光源，其中单独的波长稳定部件（例如光纤布拉格光栅（FBG））被用于激光腔的一个反射镜。也就是说，FBG代替物理“前端面” 并且起到首先限定激光腔的作用，同时还利用光栅结构将期望的波长稳定性赋予来自封装激光源的输出。因此，FBG被放置在用于容纳增益元件的相同封装内，并以紧凑的形式提供波长稳定的激光源。

2. 发明申请

WO2017143021A1 IMMOBILIZED SELENIUM, A METHOD OF MAKING, AND USES OF IMMOBILIZED SELENIUM IN A RECHARGEABLE BATTERY 审中-公开
标题翻译：固定硒，可再充电电池中固定硒的制备方法和使用方法
公开(公告)号：WO2017143021A1
公开(公告)日：2017-08-24
申请号：PCT/US2017/018110
申请日：2017-02-16
申请人： II-VI INCORPORATED , INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES
发明人： EISSLER, Elgin E. , XU, Wenqing , LI, Xiaoming , ZHANG, Yancheng , PATKAR, Shailesh , BARBAROSSA, Giovanni , GUO, Yuguo , ZHANG, Shuaifeng , YIN, Yaxia
IPC分类号： H01M4/36 , H01M4/38 , H01M4/134 , H01M10/052 , H01M10/058 , H01M2/14 , C01B32/10
CPC分类号： H01M10/052 , H01M4/13 , H01M4/133 , H01M4/136 , H01M4/364 , H01M4/38 , H01M4/625
摘要： An immobilized selenium body, made from carbon and selenium and optionally sulfur, makes selenium more stable, requiring a higher temperature or an increase in kinetic energy for selenium to escape from the immobilized selenium body and enter a gas system, as compared to selenium alone. Immobilized selenium localized in a carbon skeleton can be utilized in a rechargeable battery. Immobilization of the selenium can impart compression stress on both the carbon skeleton and the selenium. Such compression stress enhances the electrical conductivity in the carbon skeleton and among the selenium particles and creates an interface for electrons to be delivered and or harvested in use of the battery. A rechargeable battery made from immobilized selenium can be charged or discharged at a faster rate over conventional batteries and can demonstrate excellent cycling stability.
摘要翻译：由碳和硒以及可选的硫制成的固定化的硒体使得硒更稳定，需要更高的温度或者增加动能以使硒从固定的硒体中逸出并进入气体系统，与硒相比。位于碳骨架中的固定化硒可用于可充电电池。硒的固定可以在碳骨架和硒两者上施加压缩应力。这种压缩应力增强了碳骨架中和硒粒子之间的电导率，并且在使用电池时产生电子被输送和/或收获的界面。由固定硒制成的可充电电池可以比传统电池更快的速度进行充电或放电，并且可以表现出优异的循环稳定性。

3. 发明申请

WO2016154090A1 FLEXIBLE STRUCTURED OPTICAL MODULES 审中-公开
标题翻译：柔性结构光学模块
公开(公告)号：WO2016154090A1
公开(公告)日：2016-09-29
申请号：PCT/US2016/023364
申请日：2016-03-21
申请人： II-VI INCORPORATED
发明人： MCCLEAN, Ian, Peter , GURUSAMI, Aravanan , SMART, Richard , GARRETT, Mark, H. , FILIPOWICZ, Mark
IPC分类号： G02B6/35 , G02B6/30 , G03B1/10
CPC分类号： G02B6/3608 , G02B6/421 , G02B6/4292 , G02B6/43
摘要： Optical modules as used in various types of communication systems are formed to include a flexible substrate to support various optical, electronic, and opto-electronic module components in a manner that can accommodate various packaging constraints. The flexible substrate is formed of a polyimide film is known to exhibit excellent electrical isolation properties, even though the films are generally relatively thin (on the order of 10-100 μηΐ5, in most cases). The flexible polyimide film is sized to accommodate the constraints of a given package "footprint"; more particularly, sized to fit an open 'floor area' within package, allowing for a populated film to be placed around various other "fixed-in-place" elements. The polyimide film is easily cut and trimmed to exhibit whatever topology is convenient, while providing enough surface area to support the affixed components and associated optical fiber traces.
摘要翻译：在各种通信系统中使用的光学模块被形成为包括柔性基板，以可以适应各种封装约束的方式支持各种光学，电子和光电模块部件。即使膜通常较薄（大多数情况下为10-100μm），已知聚酰亚胺膜形成的柔性基板表现出优异的电绝缘性能。柔性聚酰亚胺膜的尺寸适应于给定封装“封面”的限制; 更具体地，尺寸适合于包装内的开放的“地板区域”，允许将人造薄膜放置在各种其他“固定就位”元件周围。聚酰亚胺薄膜易于切割和修整，以显示出任何方便的拓扑结构，同时提供足够的表面积来支撑固定的组件和相关的光纤迹线。

4. 发明申请

WO2016126787A1 COMPOSITE SUBSTRATE WITH ALTERNATING PATTERN OF DIAMOND AND METAL OR METAL ALLOY 审中-公开
标题翻译：具有金刚石和金属或金属合金的替代图案的复合基板
公开(公告)号：WO2016126787A1
公开(公告)日：2016-08-11
申请号：PCT/US2016/016316
申请日：2016-02-03
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , LIU, Chao , BARBAROSSA, Giovanni , EISSLER, Elgin, E. , ANDERSON, Thomas, E. , KRAISINGER, Charles, J. , LICHTENSTEIN, Norbert
IPC分类号： H01L21/3213
CPC分类号： H01L23/3732 , H01L23/3736 , H01L23/49838 , H01L23/49866 , H01L23/49894 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/83 , H01L25/0655 , H01L33/641 , H01L33/642 , H01L2224/16227 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/40139 , H01L2224/40151 , H01L2224/73263 , H01L2224/83424 , H01L2224/83438 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83463 , H01L2224/83466 , H01L2224/83469 , H01L2224/8347 , H01L2224/83471 , H01L2224/83479 , H01L2224/8348 , H01L2224/83484 , H01L2224/83493 , H01L2224/83801 , H01L2224/83851 , H01L2924/00014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/014 , H01L2924/01006 , H01L2924/0781 , H01L2924/01014 , H01L2924/01072 , H01L2924/01074 , H01L2224/37099
摘要： A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.
摘要翻译：复合基板包括电绝缘部分，片，层或片段和导电部分，片，层或片段的交替图案的副安装座基板，以及用于支撑电绝缘部分的交替图案和电绝缘部分的电极导电部分。具有P-N结的有源器件可以安装在副安装座基板上。电绝缘部分，片，层或片段可以由金刚石形成，而导电部分，片，层或片段可以由金属或金属合金形成。

5. 发明申请

WO2009003100A1 FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW 审中-公开
标题翻译：具有低WARP和BOW的SIC基板的制造
公开(公告)号：WO2009003100A1
公开(公告)日：2008-12-31
申请号：PCT/US2008/068342
申请日：2008-06-26
申请人： II-VI INCORPORATED , WU, Ping , ZWIEBACK, Ilya , GUPTA, Avinesh, K. , SEMENAS, Edward
发明人： WU, Ping , ZWIEBACK, Ilya , GUPTA, Avinesh, K. , SEMENAS, Edward
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/002 , C30B23/066 , C30B33/02
摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.
摘要翻译：制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在比SiC单晶的稍后生长部分的温度低。一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

6. 发明申请

WO2006099003A1 SIGNAL DISCRIMINATOR FOR RADIATION DETECTION SYSTEM AND METHOD 审中-公开
标题翻译：用于辐射检测系统和方法的信号辨识器
公开(公告)号：WO2006099003A1
公开(公告)日：2006-09-21
申请号：PCT/US2006/008331
申请日：2006-03-07
申请人： II-VI INCORPORATED , VYDRIN, Viatcheslav , DAVIS, Robert, K. , RUNDLE, David, S.
发明人： VYDRIN, Viatcheslav , DAVIS, Robert, K. , RUNDLE, David, S.
IPC分类号： G01T1/17
CPC分类号： G01T1/17
摘要： A radiation detection system is operative for converting (1 , 2) a radiation event into an electrical signal having an amplitude related t the energy of said radiation event, converting (3, 6) at least a portion of the electrical signal into a count value related to the amplitude of the electrical signal and determining (5) the energy of the radiation event from the count value.
摘要翻译：辐射检测系统用于将（1,2）辐射事件转换成具有与所述辐射事件的能量相关的振幅的电信号，将至少一部分电信号转换（3,6）为计数值与电信号的振幅相关，并从计数值确定（5）辐射事件的能量。

7. 发明申请

WO2006081532A1 RADIATION DETECTOR CRYSTAL AND METHOD OF FORMATION THEREOF 审中-公开
标题翻译：辐射检测器晶体及其形成方法
公开(公告)号：WO2006081532A1
公开(公告)日：2006-08-03
申请号：PCT/US2006/003152
申请日：2006-01-27
申请人： II-VI INCORPORATED , SZELES, Csaba , CAMERON, Scott, E. , MATTERA, Vincent, D., Jr. , CHAKRABARTI, Utpal, K.
发明人： SZELES, Csaba , CAMERON, Scott, E. , MATTERA, Vincent, D., Jr. , CHAKRABARTI, Utpal, K.
IPC分类号： G01T1/24 , B05D3/06
CPC分类号： H01L31/08 , H01L31/03042 , Y02E10/544 , Y02P70/521
摘要： A radiation detector crystal is made from CdxZn1 -xTe, where 0 ≤x ≤l; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.
摘要翻译：辐射检测器晶体由CdxZn1-xTe制成，其中0 = x = 1; 元素周期表第三列或第七列的元素，理想地为约1至10,000原子数十亿的浓度; 并且使用常规的晶体生长法，例如Bridgman，元素钌（Ru），元素锇（Os）或Ru和Os的组合，理想地为约1至10,000原子百分比的浓度。方法，梯度冻结法，电动态梯度冷冻法，所谓呼气加热法或气相输送法。该晶体可以用作辐射检测装置的辐射检测元件，该辐射检测元件被配置成检测并处理但不限于X射线和伽马射线事件。

8. 发明申请

WO2005099388A2 CHEMICAL-MECHANICAL POLISHING OF SIC SURFACES USING HYDROGEN PEROIXDE OR OZONATED WATER SOLUTIONS IN COMBINATION WITH COLLOIDAL ABRASIVE 审中-公开
标题翻译：使用氢化奥昔克或臭氧水解决方案与胶体磨料组合的SIC表面的化学机械抛光
公开(公告)号：WO2005099388A2
公开(公告)日：2005-10-27
申请号：PCT/US2005/011693
申请日：2005-04-06
申请人： II-VI INCORPORATED , KERR, Thomas, M. , MARTIN, Christopher, T. , STEPKO, Walter, R., M. , ANDERSON, Thomas, E.
发明人： KERR, Thomas, M. , MARTIN, Christopher, T. , STEPKO, Walter, R., M. , ANDERSON, Thomas, E.
IPC分类号： C09G1/02 , H01L21/04 , H01L21/306
CPC分类号： C09G1/02 , H01L21/02024 , H01L29/66068
摘要： A process is taught for producing a smooth, damage-free surface on a SiC wafer, suitable for subsequent epitaxial film growth or ion implantation and semiconductor device fabrication. The process uses certain oxygenated solutions in combination with a colloidal abrasive in order to remove material from the wafer surface in a controlled manner. Hydrogen peroxide with or without ozonated water, in combination with colloidal silica or alumina (or alternatively, in combination with HF to affect the oxide removal) is the preferred embodiment of the invention. The invention also provides a means to monitor the sub-surface damage depth and extent since it initially reveals this damage though the higher oxidation rate and the associated higher removal rate.
摘要翻译：教导了一种在SiC晶片上产生光滑，无损伤表面的方法，适用于随后的外延膜生长或离子注入和半导体器件制造。该方法使用某些含氧溶液与胶态研磨剂组合以便以受控的方式从晶片表面去除材料。含有或不含臭氧化水的过氧化氢与胶体二氧化硅或氧化铝组合（或者与HF组合以影响氧化物去除）是本发明的优选实施方案。本发明还提供了一种监测次表面损伤深度和程度的方法，因为它最初通过较高的氧化速率和相关的更高的去除速率揭示了这种损伤。

9. 发明申请

WO2016073233A1 HIGHLY TWINNED, ORIENTED POLYCRYSTALLINE DIAMOND FILM AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：高双面，方向的多晶金刚石薄膜及其制造方法
公开(公告)号：WO2016073233A1
公开(公告)日：2016-05-12
申请号：PCT/US2015/057339
申请日：2015-10-26
申请人： II-VI INCORPORATED
发明人： XU, Wen-Qing , LIU, Chao , KRAISINGER, Charles, Jr. , TANNER, Charles, D. , CURRIER, Ian , SABENS, David , EISSLER, Elgin, E. , ANDERSON, Thomas, E.
IPC分类号： C01B31/06 , C23C16/27 , B23B27/20 , B23B51/00 , B23C5/16
CPC分类号： C30B28/14 , C01B32/25 , C30B29/04 , C30B29/605 , H01B1/04
摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction > 70% of the total number of diamond crystallites forming the polycrystalline diamond film.
摘要翻译：在CVD反应器中的多晶金刚石膜的化学气相沉积（CVD）生长方法中，将气态氢气和气态烃的气体混合物引入到CVD反应器中。由气体混合物形成的等离子体保持在设置在CVD反应器中的导电基板的表面上方，并使多晶金刚石膜在导电基板的表面上生长。多晶金刚石膜的中心处的温度T在多晶金刚石膜的生长期间被控制。 CVD生长的多晶金刚石膜包括金刚石微晶，其可以具有沿[110]金刚石晶格方向的取向百分比>形成多晶金刚石膜的金刚石微晶的总数的70％。

10. 发明申请

WO2010111473A1 SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS 审中-公开
标题翻译： SIC单晶沉积生长方法和装置
公开(公告)号：WO2010111473A1
公开(公告)日：2010-09-30
申请号：PCT/US2010/028636
申请日：2010-03-25
申请人： II-VI INCORPORATED , GUPTA, Avinash, K. , ZWIEBACK, Ilya , SEMENAS, Edward , GETKIN, Marcus, L. , FLYNN, Patrick, D.
发明人： GUPTA, Avinash, K. , ZWIEBACK, Ilya , SEMENAS, Edward , GETKIN, Marcus, L. , FLYNN, Patrick, D.
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/005
摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
摘要翻译：物理蒸汽输送生长系统包括装载有SiC源材料的生长室和间隔开的SiC晶种，以及设置在生长室中至少部分透气的外壳。该包络将生长室分成包括SiC源材料的源室和包括SiC晶种的结晶室。外壳由在SiC晶种在结晶室中的SiC单晶的升华生长期间产生的蒸汽反应的材料形成，以产生在SiC生长期间作为C的额外来源的C轴承蒸气单晶在SiC晶种上。

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