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1. 发明申请

WO2012091908A3 METHOD AND APPARATUS FOR CONTROLLING AN ELECTROSTATIC LENS ABOUT A CENTRAL RAY TRAJECTORY OF AN ION BEAM 审中-公开
公开(公告)号：WO2012091908A3
公开(公告)日：2012-07-05
申请号：PCT/US2011/064413
申请日：2011-12-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , RADOVANOV, Svetlana , KELLERMAN, Peter, L. , SINCLAIR, Frank , LINDBERG, Robert, C.
发明人： RADOVANOV, Svetlana , KELLERMAN, Peter, L. , SINCLAIR, Frank , LINDBERG, Robert, C.
IPC分类号： H01J37/12 , H01J37/15 , H01J37/317
摘要： A method of controlling deflection of a charged particle beam in an electrostatic lens (700) includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes (714, 716) disposed at unadjusted positions (L1) that are symmetric with respect to the central ray trajectory (702) with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes (716) is arranged at adjusted positions (L2) that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.

2. 发明申请

WO2009064871A2 TECHNIQUES FOR MEASURING AND CONTROLLING ION BEAM ANGLE AND DENSITY UNIFORMITY 审中-公开
标题翻译：测量和控制离子束角度和密度均匀性的技术
公开(公告)号：WO2009064871A2
公开(公告)日：2009-05-22
申请号：PCT/US2008/083386
申请日：2008-11-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KELLERMAN, Peter, L. , PURSER, Kenneth , RADOVANOV, Svetlana , SINCLAIR, Frank , SLOCUM, John , BENVENISTE, Victor, M.
发明人： KELLERMAN, Peter, L. , PURSER, Kenneth , RADOVANOV, Svetlana , SINCLAIR, Frank , SLOCUM, John , BENVENISTE, Victor, M.
IPC分类号： H01L21/265 , H01L21/66
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/024 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/30472 , H01J2237/31703
摘要： Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.
摘要翻译：公开了用于测量和控制离子束角度和密度均匀性的技术。在一个特定的示例性实施例中，可以将这些技术实现为用于测量和控制离子束角度和密度均匀性的装置。该设备可以包括具有开口，杯子和杯子后部的至少一个收集器的测量组件。该设备还可以包括致动器，以沿着致动路径移动测量组件以扫描离子束以测量和控制离子束均匀性。

3. 发明申请

WO2011060258A1 SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM 审中-公开
标题翻译：用于操纵离子束的系统和方法
公开(公告)号：WO2011060258A1
公开(公告)日：2011-05-19
申请号：PCT/US2010/056531
申请日：2010-11-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINCLAIR, Frank , BENVENISTE, Victor, M. , RADOVANOV, Svetlana , BUFF, James, S.
发明人： SINCLAIR, Frank , BENVENISTE, Victor, M. , RADOVANOV, Svetlana , BUFF, James, S.
IPC分类号： H01J37/153 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/153 , H01J2237/1532
摘要： A system for manipulating an ion beam (104) having a principal axis (7) Includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first (in 808 or 810) and a second current (in 808 or 810), respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third (in 812 or 814) and a fourth (in 814 or 812, respectively) current, respectively, A lens gap (306) Is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force (F5, F6) on the ion beam about its principal axis.
摘要翻译：一种用于操纵具有主轴线（7）的离子束（104）的系统包括具有第一和第二线圈的上部构件，该第一和第二线圈通常设置在上部构件的不同区域中，并且被配置为相互独立地导通第一（在808或810）和第二电流（在808或810中）。下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为彼此独立地导通第三（在812或814）和第四（在814或812中））电流，分别在上部构件和下部构件之间限定透镜间隙（306），并且构造成透射离子束，其中第一至第四电流产生施加旋转力（F5，F6）的45度四极场，在其主轴上的离子束上。

4. 发明申请

WO2012091851A2 SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM 审中-公开
标题翻译：用于生产质量分析离子束的系统和方法
公开(公告)号：WO2012091851A2
公开(公告)日：2012-07-05
申请号：PCT/US2011/063095
申请日：2011-12-02
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , BENVENISTE, Victor, M. , SINCLAIR, Frank , RADOVANOV, Svetlana , KOO, Bon, Woong
发明人： BENVENISTE, Victor, M. , SINCLAIR, Frank , RADOVANOV, Svetlana , KOO, Bon, Woong
IPC分类号： H01J37/317 , H01J37/08 , H01J27/02
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/20 , H01J49/30 , H01J2237/055 , H01J2237/057 , H01J2237/20221
摘要： An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with, respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.
摘要翻译：植入系统包括具有一组孔口的离子提取板，其被配置为从离子源提取离子以形成多个子束。磁分析器被配置为提供磁场，以在大体上垂直于子束的主轴的第一方向上偏转子束中的离子。质量分析板包括一组孔，其中具有第一质量/荷率的第一离子种类通过质量分析板传输，具有第二质量/荷重比的第二离子种被质量分析板阻挡。工件保持器构造成在垂直于第一方向的第二方向上相对于质量分析板移动，其中透过质量分析板的离子图案在衬底处沿着第一方向形成连续的离子束电流。

5. 发明申请

WO2011082163A1 SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 审中-公开
标题翻译：控制抛光静电镜中带电粒子束的偏移的系统和方法
公开(公告)号：WO2011082163A1
公开(公告)日：2011-07-07
申请号：PCT/US2010/062225
申请日：2010-12-28
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KELLERMAN, Peter, L. , SINCLAIR, Frank , BENVENISTE, Victor, M. , LU, Jun
发明人： KELLERMAN, Peter, L. , SINCLAIR, Frank , BENVENISTE, Victor, M. , LU, Jun
IPC分类号： H01J37/12 , H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/decleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of "virtual knobs" that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine timing of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括分级偏转/去晶化透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调整施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括光束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的精细定时，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度的同时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

6. 发明申请

WO2011139407A1 REMOVING A SHEET FROM THE SURFACE OF A MELT USING ELASTICITY AND BUOYANCY 审中-公开
标题翻译：使用弹性和波纹从表面去除表面
公开(公告)号：WO2011139407A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/027209
申请日：2011-03-04
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KELLERMAN, Peter, L. , SUN, Dawei , MACINTOSH, Brian, H. , SINCLAIR, Frank , HELENBROOK, Brian , HARVEY, David, S.
发明人： KELLERMAN, Peter, L. , SUN, Dawei , MACINTOSH, Brian, H. , SINCLAIR, Frank , HELENBROOK, Brian , HARVEY, David, S.
IPC分类号： C30B11/00 , C30B29/06
CPC分类号： C30B15/00 , C30B11/007 , C30B15/06 , C30B15/20 , C30B15/22 , C30B29/06
摘要： Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.
摘要翻译：公开了与片材生产相关的实施例。将材料的熔体冷却以在熔体上形成材料片。片材形成在第一片材高度的第一区域中。片材被翻译成第二区域，使得其具有高于第一片材高度的第二片材高度。然后将片材与熔体分离。种子晶片可以用于形成片材。

7. 发明申请

WO2010077418A1 TECHNIQUES FOR INDEPENDENTLY CONTROLLING DEFLECTION, DECELERATION, AND FOCUS OF AN ION BEAM 审中-公开
标题翻译：用于独立控制离子束的偏转，减弱和聚焦的技术
公开(公告)号：WO2010077418A1
公开(公告)日：2010-07-08
申请号：PCT/US2009/062031
申请日：2009-10-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , KELLERMAN, Peter, L. , RADOVANOV, Svetlana , SINCLAIR, Frank , BENVENISTE, Victor, M.
发明人： KELLERMAN, Peter, L. , RADOVANOV, Svetlana , SINCLAIR, Frank , BENVENISTE, Victor, M.
IPC分类号： H01L21/265
CPC分类号： H01J37/1471 , H01J37/12 , H01J37/3171
摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied a long the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
摘要翻译：公开了用于独立地控制离子束的偏转，减速和聚焦的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。在上部电极组和下部电极组之间的电位差也可以改变长的中心射线轨迹，以反映沿着中心射线轨迹的每个点的离子束的能量，以独立地控制偏转，减速和离子束的焦点。

8. 发明申请

WO2012112991A1 TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION 审中-公开
标题翻译：限制故障电流传输的技术
公开(公告)号：WO2012112991A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025901
申请日：2012-02-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINCLAIR, Frank , DORAI, Rajesh
发明人： SINCLAIR, Frank , DORAI, Rajesh
IPC分类号： H02H9/02 , H01F38/02
CPC分类号： H02H9/021 , H01F38/023
摘要： A technique for limiting fault current transmission is disclosed, in one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy: axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current, in some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil.
摘要翻译：在一个特定的示例性实施例中，公开了一种用于限制故障电流传输的技术，该技术可以用包括具有至少第一容易轴和硬轴的磁芯的故障电流限制器来实现; 以及缠绕在芯上的第一线圈，构造成承载电流的第一线圈在一些实施例中可以使芯的容易轴与由通过第一线圈传输的电流产生的H场对准。

9. 发明申请

WO2011139587A1 SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION BEAM GENERATION 审中-公开
标题翻译：用于高密度宽度RIBBON离子束生成的小形状因子等离子体源
公开(公告)号：WO2011139587A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/033457
申请日：2011-04-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , BILOIU, Costel , SCHEUER, Jay , OLSON, Joseph , SINCLAIR, Frank , DISTASO, Daniel
发明人： BILOIU, Costel , SCHEUER, Jay , OLSON, Joseph , SINCLAIR, Frank , DISTASO, Daniel
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H05H1/30
摘要： An ion source (200), capable of generating high - density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width (w), which is the dimension along which the beam is extracted, is greater than its height (h). The depth (d) of the source may be defined to maximize energy transfer from the antenna (203) to the plasma. In a further embodiment, a multicusp magnetic field (210, 211, 212) surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
摘要翻译：公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源（200）。与常规ICP源相反，本公开描述了不是圆柱形的ICP源。相反，源被限定为使得其宽度（w）（其是提取梁的尺寸）大于其高度（h）。可以定义源的深度（d）以最大化从天线（203）到等离子体的能量传递。在另一实施例中，围绕ICP源的多谐振磁场（210,211,212）用于进一步增加电流密度并提高所提取的离子束的均匀性。离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

10. 发明申请

WO2011126919A1 APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW 审中-公开
标题翻译：用于控制RF离子源窗口温度的装置
公开(公告)号：WO2011126919A1
公开(公告)日：2011-10-13
申请号：PCT/US2011/030729
申请日：2011-03-31
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINCLAIR, Frank , BILOIU, Costel , KOO, Bon-Woong , BENVENISTE, Victor , PATEL, Shardul
发明人： SINCLAIR, Frank , BILOIU, Costel , KOO, Bon-Woong , BENVENISTE, Victor , PATEL, Shardul
IPC分类号： H01J37/32
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source (10) utilizing a heating/RF - shielding element (20) for controlling the temperature of an RF window (30) and to act m an RF shielding element for the RF Ion source (10). When the heating/RF shielding element (20) is in a heating mode. It suppresses formation of unwanted deposits on the RF window (30) which negatively impacts the transfer of RF energy from an RF antenna (15) to a plasma chamber. When the heating/RF - shielding element (20) is in a shielding mode, it provides an electrostatic shielding for the RF ion source (10).
摘要翻译： RF离子源（10），其利用加热/ RF屏蔽元件（20）来控制RF窗口（30）的温度并且用于RF离子源（10）的RF屏蔽元件。当加热/ RF屏蔽元件（20）处于加热模式时。它抑制在RF窗口（30）上形成不需要的沉积物，这对RF能量从RF天线（15）到等离子体室的传输产生负面影响。当加热/ RF屏蔽元件（20）处于屏蔽模式时，它为RF离子源（10）提供静电屏蔽。

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