专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2014179677A1 EXTENDED LIFETIME ION SOURCE 审中-公开
标题翻译：延伸的生命之源
公开(公告)号：WO2014179677A1
公开(公告)日：2014-11-06
申请号：PCT/US2014/036558
申请日：2014-05-02
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： BILOIU, Costel , SPORLEDER, David P. , SCHEUER, Jay , BASSOM, Neil J.
IPC分类号： H01J37/08 , H01J27/02 , H01L21/425
CPC分类号： C23F4/00 , H01J27/08 , H01J37/08 , H01J37/3053 , H01J2237/022 , H01J2237/3341
摘要： An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber.
摘要翻译：离子源包括离子源室，设置在离子源室内的并且被配置为发射电子以产生电弧等离子体的阴极，以及构造成将电子排斥回到电弧等离子体中的反射器。离子源室和阴极可以包括难熔金属。离子源室还包括被配置为向离子源室提供卤素物质的气体源。反应性插入物与卤素物质相互作用，以在离子源室内的难熔金属材料的小于第二蚀刻速率的第一组操作条件下产生耐热金属材料在离子源室内的第一蚀刻速率当反应性插入物未设置在离子源室内时，在第一组操作条件下。

2. 发明申请

WO2019125599A1 DYNAMIC TEMPERATURE CONTROL OF AN ION SOURCE 审中-公开
公开(公告)号：WO2019125599A1
公开(公告)日：2019-06-27
申请号：PCT/US2018/057321
申请日：2018-10-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： PEREL, Alexander S. , SPORLEDER, David P. , MCLAUGHLIN, Adam M. , CHANEY, Craig R. , BASSOM, Neil J.
IPC分类号： H01J37/08 , H01J27/18
摘要： A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

3. 发明申请

WO2018004880A1 VAPORIZER FOR ION SOURCE 审中-公开
标题翻译：离子源蒸发器
公开(公告)号：WO2018004880A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/034005
申请日：2017-05-23
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANEY, Craig R. , SPORLEDER, David P.
IPC分类号： H01J27/02 , H01J37/08
摘要： A vaporizer with several novel features to prevent vapor condensation and the clogging of the nozzle is disclosed. The vaporizer is designed such that there is an increase in temperature along the path that the vapor travels as it flows from the crucible to the arc chamber. The vaporizer uses a nested architecture, where the crucible is installed within an outer housing. Vapor leaving the crucible exits through an aperture and travels along the volume between the crucible and the outer housing to the nozzle, where it flows to the arc chamber. In certain embodiments, the aperture in the crucible is disposed at a location where liquid in the crucible cannot reach the aperture.
摘要翻译：公开了一种蒸发器，其具有若干新颖特征以防止蒸气冷凝和喷嘴堵塞。蒸发器被设计成当蒸汽从坩埚流向电弧室时沿着蒸汽行进的路径温度增加。蒸发器采用嵌套式结构，坩埚安装在外壳内。离开坩埚的蒸汽通过一个孔流出，并沿着坩埚和外壳之间的体积流到喷嘴，在那里它流向电弧室。在某些实施例中，坩埚中的孔布置在坩埚中的液体不能到达孔的位置处。

4. 发明申请

WO2017131895A1 DUAL MATERIAL REPELLER 审中-公开
标题翻译：双材料驱动器
公开(公告)号：WO2017131895A1
公开(公告)日：2017-08-03
申请号：PCT/US2016/067548
申请日：2016-12-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LEE, William Davis , PEREL, Alexander S. , SPORLEDER, David P.
IPC分类号： H01J27/02 , H01J27/20
CPC分类号： H01J27/022 , H01J27/205
摘要： The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. The repeller includes a repeller head, which may be a disc shaped component, and a stem to support the head. The repeller head is made from a conductive material having a higher thermal conductivity than the stem. In this way, the temperature of the repeller head is maintained at a higher temperature than would otherwise be possible. The higher temperature limits the build-up of material on the repeller head, which improves the performance of the IHC ion source. In certain embodiments, the repeller head and the stem are connected using a press fit. Differences in the coefficient of thermal expansion of the repeller head and the stem may cause the press fit to become tighter at higher temperatures.
摘要翻译： IHC离子源包括在相对端具有阴极和排斥极的离子源室。排斥器由两个分立的部分组成，每个部分包含不同的材料。排斥器包括排斥器头，排斥器头可以是盘状组件，以及支撑头的杆。排斥头由具有比杆的导热率高的导电材料制成。通过这种方式，推斥头的温度保持在比其他情况下更高的温度。较高的温度限制了排斥头上材料的积聚，这提高了IHC离子源的性能。在某些实施例中，推斥头和杆使用压配合连接。排斥器头部和杆部的热膨胀系数的差异可能导致压配合在更高的温度下变得更紧密。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式