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1. 发明申请

WO2019164614A1 CONDUCTIVE BEAM OPTICS FOR REDUCING PARTICLES IN ION IMPLANTER 审中-公开
公开(公告)号：WO2019164614A1
公开(公告)日：2019-08-29
申请号：PCT/US2019/014536
申请日：2019-01-22
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANG, Shengwu , SINCLAIR, Frank , LIKHANSKII, Alexandre , CAMPBELL, Christopher , LINDBERG, Robert C.
IPC分类号： H01J37/147 , H01J37/317
摘要： Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

2. 发明申请

WO2016040006A1 CONTROL OF ION ANGULAR DISTRIBUTION OF ION BEAMS WITH HIDDEN DEFLECTION ELECTRODE 审中-公开
标题翻译：用隐形偏转电极控制离子束的离子角分布
公开(公告)号：WO2016040006A1
公开(公告)日：2016-03-17
申请号：PCT/US2015/047356
申请日：2015-08-28
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： BILOIU, Costel , KURUNCZI, Peter , ROCKWELL, Tyler , CAMPBELL, Christopher , SINGH, Vikram , RADOVANOV, Svetlana
IPC分类号： H01J37/32
CPC分类号： H01J37/08 , H01J27/024 , H01J37/3171 , H01J37/32357 , H01J2237/061 , H01J2237/30472
摘要： A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.
摘要翻译：一种处理设备可以包括：提取板，沿着等离子体室的一侧布置，所述抽出板具有第一和第二孔，以及在第一和第二孔之间的中间部分，第一和第二孔被构造成限定第一和第二孔当等离子体存在于等离子体室中并且在提取板和基板之间施加提取电压时的第二离子束; 隐藏的偏转电极，设置在等离子体室外部的中间部分附近，并与提取板电隔离; 以及隐藏的偏转电极电源，用于向隐藏的偏转电极施加偏置电压，其中偏置电压被配置为修改离子的平均入射角和/或围绕平均入射角的入射角范围第一和第二离子束。

3. 发明申请

WO2017027165A1 APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND REACTIVE GAS 审中-公开
标题翻译：使用方向等离子体和反应性气体处理基板的设备和技术
公开(公告)号：WO2017027165A1
公开(公告)日：2017-02-16
申请号：PCT/US2016/042497
申请日：2016-07-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIANG, Shurong , BILOIU, Costel , GILCHRIST, Glen F. R. , SINGH, Vikram , CAMPBELL, Christopher , HERTEL, Richard , KONTOS, Alexander , SFERLAZZO, Piero , CHEN, Tsung-Liang
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/3213 , H01L21/02
CPC分类号： H05H1/24 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J2237/327 , H01L21/3065 , H01L21/308 , H01L22/12 , H01L22/20
摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
摘要翻译：一种处理基材的设备。该装置可以包括反应气体源，其具有布置在处理室中的反应气体出口，反应气体出口将第一反应气体引导到基底; 等离子体室，其耦合到所述处理室并且包括提取板，所述提取板具有沿着第一方向延伸的提取孔，所述提取孔设置在所述处理室内并且可沿着与所述反应气体源相对的第一位置和与所述第一方向垂直的第二方向面向提取孔的第二位置; 以及设置在所述反应气体出口和所述提取孔之间的气体限流器，所述气体流量限制器在至少所述等离子体室和衬底台之间限定差分泵送通道。

4. 发明申请

WO2019164615A1 CONDUCTIVE BEAM OPTIC CONTAINING INTERNAL HEATING ELEMENT 审中-公开
公开(公告)号：WO2019164615A1
公开(公告)日：2019-08-29
申请号：PCT/US2019/014541
申请日：2019-01-22
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANG, Shengwu , SINCLAIR, Frank , LIKHANSKII, Alexandre , CAMPBELL, Christopher , LINDBERG, Robert C. , HERMANSON, Eric D.
IPC分类号： H01J37/147 , H01J37/317
摘要： Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

5. 发明申请

WO2017019312A1 APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY 审中-公开
标题翻译：使用方向等离子体和使用化学物质点处理基板的设备和技术
公开(公告)号：WO2017019312A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/042261
申请日：2016-07-14
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LIANG, Shurong , BILOIU, Costel , GILCHRIST, Glen , SINGH, Vikram , CAMPBELL, Christopher , HERTEL, Richard , KONTOS, Alexander C.
IPC分类号： H01L21/3065 , H05H1/46 , H01L21/02 , H01L21/3213
CPC分类号： H01J37/3053 , C23F4/00 , H01J37/08 , H01J37/1471
摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.
摘要翻译：在一个实施例中，用于处理衬底的设备可以包括提取板，以从等离子体室提取等离子体束并将等离子体束引导到衬底。等离子体束可以包括相对于衬底的平面的垂直线形成非零入射角的离子; 以及设置在所述等离子体室外部的气体出口系统，所述气体出口系统耦合到气体源并被布置成将从所述气体源接收的反应性气体输送到所述衬底，其中所述反应气体不通过所述等离子体室。

6. 发明申请

WO2015061105A1 APPARATUS TO CONTROL AN ION BEAM 审中-公开
标题翻译：控制离子束的装置
公开(公告)号：WO2015061105A1
公开(公告)日：2015-04-30
申请号：PCT/US2014/060696
申请日：2014-10-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： PURSER, Kenneth H. , CAMPBELL, Christopher , SINCLAIR, Frank , LINDBERG, Robert C. , OLSON, Joseph C.
IPC分类号： H01J37/317
CPC分类号： H01J37/1475 , H01J37/317 , H01J37/3171 , H01J2237/30472
摘要： An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.
摘要翻译：控制离子束的装置包括扫描器，其配置成第一状态以扫描离子束，其中扫描器输出离子束作为发散离子束; 准直器，被配置为沿着准直器的一侧接收发散的离子束并且将发散离子束作为准直的离子束输出; 光束调节部件，其靠近准直仪的一侧延伸; 以及控制器，被配置为当所述扫描仪处于所述第一状态时向所述光束调整部件发送第一信号，以将所述发散离子束的离子轨迹从第一组轨迹调整到第二组轨迹。

7. 发明申请

WO2015061104A1 DUAL STAGE SCANNER FOR ION BEAM CONTROL 审中-公开
标题翻译：用于离子束控制的双级扫描仪
公开(公告)号：WO2015061104A1
公开(公告)日：2015-04-30
申请号：PCT/US2014/060692
申请日：2014-10-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： PURSER, Kenneth H. , CAMPBELL, Christopher , SINCLAIR, Frank , LINDBERG, Robert C. , OLSON, Joseph C.
IPC分类号： H01J37/317
CPC分类号： H01J37/1475 , H01J37/3171
摘要： An ion beam scanner includes a first scanner stage having a first opening to transmit an ion beam, the first scanner stage to generate, responsive to a first oscillating deflection signal, a first oscillating deflecting field within the first opening; a second scanner stage disposed downstream of the first scanner stage and having a second opening to transmit the ion beam, the second scanner stage to generate, responsive to a second oscillating deflection signal, a second oscillating deflecting field within the second opening that is opposite in direction to the first oscillating deflecting field, and a scan controller to synchronize the first oscillating deflection signal and second oscillating deflection signal to generate a plurality of ion trajectories when the scanned ion beam exits the second stage that define a common focal point.
摘要翻译：离子束扫描器包括具有第一开口以传输离子束的第一扫描器台，所述第一扫描仪台响应第一振荡偏转信号产生第一开口内的第一振荡偏转场; 第二扫描台，其设置在所述第一扫描台的下游，并具有用于透射所述离子束的第二开口，所述第二扫描仪台响应于第二振荡偏转信号，产生所述第二开口内的第二振荡偏转场，方向到第一振荡偏转场，以及扫描控制器，当扫描的离子束离开定义公共焦点的第二阶段时，使第一振荡偏转信号和第二振荡偏转信号同步以产生多个离子轨迹。

8. 发明申请

WO2015061101A1 DUAL MODE ION IMPLANTER 审中-公开
标题翻译：双模离合器
公开(公告)号：WO2015061101A1
公开(公告)日：2015-04-30
申请号：PCT/US2014/060687
申请日：2014-10-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： PURSER, Kenneth H. , CAMPBELL, Christopher , SINCLAIR, Frank , LINDBERG, Robert C. , OLSON, Joseph C.
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J2237/0455 , H01J2237/30483
摘要： A system for dual mode operation in an ion implanter may include a movable beam blocker to adjust beam width of an ion beam in a first direction perpendicular to a first local direction of propagation of the ion beam. The system may further include a scanner to scan the ion beam in a second direction perpendicular to a second local direction of propagation of the ion beam when in a first state and to transmit the ion beam unperturbed in a second state; and mode selector to send a set of signals to the movable beam blocker and to the scanner in order to adjust the width of the ion beam and state of the scanner in concert.
摘要翻译：用于离子注入机中的双模式操作的系统可以包括可移动束阻挡器，以在垂直于离子束的第一局部传播方向的第一方向上调节离子束的束宽度。该系统可以进一步包括扫描仪，当处于第一状态时，扫描仪沿垂直于离子束的第二局部传播方向的第二方向扫描离子束，并且在第二状态下传输不受扰动的离子束; 以及模式选择器，用于向可移动光束阻挡器和扫描器发送一组信号，以便调整离子束的宽度和扫描仪的状态。

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