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1. 发明申请

WO2008073734A3 MAGNETIC MONITORING OF A FARADAY CUP FOR AN ION IMPLANTER 审中-公开
标题翻译：用于离子植入物的微型杯的磁性监测
公开(公告)号：WO2008073734A3
公开(公告)日：2008-08-07
申请号：PCT/US2007086240
申请日：2007-12-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , DZENGELESKI JOSEPH P , EVANS MORGAN D , SCHEUER JAY THOMAS , SHETTY ASHWIN , SWENSON KENNETH
发明人： DZENGELESKI JOSEPH P , EVANS MORGAN D , SCHEUER JAY THOMAS , SHETTY ASHWIN , SWENSON KENNETH
IPC分类号： H01J37/244 , G01R19/00 , H01J37/317
CPC分类号： G01R33/07 , B82Y25/00 , G01R19/0061 , G01R33/093 , H01J37/244 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24535 , H01J2237/24564 , H01J2237/304 , H01J2237/31703
摘要： This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.
摘要翻译：本公开提供了用于离子注入机的法拉第杯的磁监测方法。在本公开中，存在位于真空室内的真空室和法拉第杯。法拉第杯配置成在离子束进入真空室的路径内移动。位于真空室周围的磁性监测器被配置为将与法拉第杯相关的磁场与杂散磁场区分开。

2. 发明申请

WO2008136858A3 TECHNIQUES FOR REMOVING MOLECULAR FRAGMENTS FROM AN ION IMPLANTER 审中-公开
标题翻译：从离子植入物中去除分子碎片的技术
公开(公告)号：WO2008136858A3
公开(公告)日：2009-04-30
申请号：PCT/US2007084102
申请日：2007-11-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
发明人： HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
IPC分类号： H01J7/18 , C01B3/00 , H01J27/02 , H01J37/317
CPC分类号： C23C14/48 , C01B3/0026 , C01B3/0031 , C01B3/0036 , C01B3/0047 , C01B3/0068 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/31705 , Y02E60/327
摘要： Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.
摘要翻译：公开了从离子注入机去除分子碎片的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于从离子注入机去除分子碎片的装置。该装置可以包括配置成耦合到离子源室并且将进料材料供应到离子源室的供给机构。该装置还可以包括放置在进料材料的流动路径中的一种或多种吸氢材料，以防止进料中至少一部分含氢分子碎片进入离子源室。

3. 发明申请

WO2009120845A2 TECHNIQUES FOR IMPROVED UNIFORMITY TUNING IN AN ION IMPLANTER SYSTEM 审中-公开
标题翻译：在离子植入系统中改进均匀调谐的技术
公开(公告)号：WO2009120845A2
公开(公告)日：2009-10-01
申请号：PCT/US2009038366
申请日：2009-03-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , EVANS MORGAN D
发明人： EVANS MORGAN D
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/304 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/30483 , H01J2237/31703
摘要： Techniques for uniformity tuning in an ion implanter system are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise measuring a first ion beam current density profile along an ion beam path. The method may further comprise measuring a second ion beam current density profile along the ion beam path. In addition, the method may comprise determining a third ion beam current density profile along the ion beam path based at least in part on the first ion beam current density profile and the second ion beam current density profile.
摘要翻译：公开了用于离子注入机系统中均匀性调谐的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子束均匀性调谐的方法。该方法可以包括在离子注入机系统中产生离子束。该方法还可以包括沿离子束路径测量第一离子束电流密度分布。该方法还可以包括沿离子束路径测量第二离子束电流密度分布。另外，该方法可以包括至少部分地基于第一离子束电流密度分布和第二离子束电流密度分布来确定离子束路径的第三离子束电流密度分布。

4. 发明申请

WO2007145953A3 ION BEAM CURRENT UNIFORMITY MONITOR, ION IPLANTER AND RELATED METHOD 审中-公开
标题翻译：离子束电流均匀性监测器，离子IPLANTER及相关方法
公开(公告)号：WO2007145953A3
公开(公告)日：2008-03-13
申请号：PCT/US2007013251
申请日：2007-06-05
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , CALLAHAN WILLIAM G , EVANS MORGAN D , GAMMEL GEORGE M , HUSSEY NORMAN E , NORRIS GREGG A , OLSON JOSEPH C
发明人： CALLAHAN WILLIAM G , EVANS MORGAN D , GAMMEL GEORGE M , HUSSEY NORMAN E , NORRIS GREGG A , OLSON JOSEPH C
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/31703
摘要： An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor (15) includes an ion beam current measurer including a plurality of measuring devices (17) for measuring a current of an ion beam (12) at a plurality of locations; and a controller (18) for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
摘要翻译：公开了一种离子束电流均匀性监测器，离子注入机及相关方法。在一个实施例中，离子束电流均匀性监测器（15）包括离子束电流测量器，其包括用于测量多个位置处的离子束（12）的电流的多个测量装置（17）以及用于通过离子束电流测量器基于离子束电流测量来维持离子束电流均匀性的控制器（18）。

5. 发明申请

WO2004025701A3 LOAD LOCK OPTIMIZATION METHOD AND SYSTEM 审中-公开
标题翻译：负载优化方法和系统
公开(公告)号：WO2004025701A3
公开(公告)日：2005-01-27
申请号：PCT/US0328213
申请日：2003-09-10
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , EVANS MORGAN D
发明人： EVANS MORGAN D
IPC分类号： B65G49/00 , G05B19/418 , H01L21/265 , H01L21/677 , G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32291 , G05B2219/45032 , Y02P90/20
摘要： A method and system of optimizing a state change can include isolating a load at a first state, such as a wafer cassette, a wafer photoresist, a prosthetic device, or other device to be implanted, in a load lock of a wafer implanter, and bringing the load from the first state to a lock set point state, such as by pumping down the load lock to vacuum. The load may then be exposed to an environment at a second state, such as in an implant chamber with conditions desirable for implanting, that may be disturbed by the exposing, and the second state may then re-established. The time to re-establish the second state may be optimized as a function of the time to reach the lock set point state. For the implanter, the time to first implant may be optimized as a function of pump down time.
摘要翻译：优化状态变化的方法和系统可以包括在晶片植入机的负载锁定中将第一状态的负载（例如晶片盒，晶片光刻胶，假体装置或待植入的其它装置）隔离，以及将负载从第一状态转移到锁定设定点状态，例如通过将负载锁定泵送到真空。然后可以将负载暴露于处于第二状态的环境中，例如在具有可能被植入的条件的植入室中，其可被曝光所干扰，然后可以重新建立第二状态。可以根据达到锁定设定点状态的时间的函数优化重新建立第二状态的时间。对于注入机，首次植入的时间可以作为抽空时间的函数进行优化。

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