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1. 发明申请

WO2008042585A2 MULTI-PURPOSE ELECTROSTATIC LENS FOR AN ION IMPLANTER SYSTEM 审中-公开
标题翻译：用于离子植入系统的多用途静电镜
公开(公告)号：WO2008042585A2
公开(公告)日：2008-04-10
申请号：PCT/US2007078631
申请日：2007-09-17
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BUFF JAMES S , RADOVANOV SVETLANA B , RENAU ANTHONY
发明人： BUFF JAMES S , RADOVANOV SVETLANA B , RENAU ANTHONY
IPC分类号： H01J37/12 , H01J37/317
CPC分类号： H01J37/12 , H01J37/3171 , H01J2237/121
摘要： Multi-purpose electrostatic lens for an ion implanter. The electrostatic lens allows an ion implanter to scan, accelerate, decelerate, expand, compress, focus and parallelize an ion beam. This capability enables the ion implanter to function as either a high precision medium-current ion implanter or as a high-current ion implanter.
摘要翻译：用于离子注入机的多功能静电透镜。静电透镜允许离子注入机扫描，加速，减速，膨胀，压缩，聚焦和并联离子束。该功能使离子注入机能够用作高精度中电流离子注入机或高电流离子注入机。

2. 发明申请

WO2015187639A3 METHOD OF IMPROVING ION BEAM QUALITY IN A NON-MASS-ANALYZED ION IMPLANTATION SYSTEM 审中-公开
标题翻译：提高非质量分析离子注入系统中离子束质量的方法
公开(公告)号：WO2015187639A3
公开(公告)日：2017-05-04
申请号：PCT/US2015033698
申请日：2015-06-02
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
发明人： KOO BON-WOONG , LEAVITT CHRISTOPHER J , FRONTIERO JOHN A , MILLER TIMOTHY J , RADOVANOV SVETLANA B
IPC分类号： H01L21/265
CPC分类号： C23C14/564 , C23C14/14 , C23C14/48 , H01J27/00 , H01J37/3171
摘要： A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.
摘要翻译：公开了一种处理工件的方法，其中等离子体室首先使用调节气体和任选的辅助气体进行涂覆。设置在调节气体容器内的调节气体可以包括期望的掺杂剂物质的氢化物和填充气体，其中填充气体是第4族或第5族元素的氢化物。调节气体容器的其余部分可以包含氢气。在该调节过程之后，将包含氟和期望的掺杂剂物质的原料气引入等离子体室并离子化。然后离子从等离子体腔室中提取出来，并朝工件加速，在那里它们被植入而不用首先进行质量分析。在一些实施例中，期望的掺杂剂物质可以是硼。

3. 发明申请

WO0223583A9 MONITOR SYSTEM AND METHOD FOR SEMICONDUCTOR PROCESSES 审中-公开
标题翻译：用于半导体工艺的监测系统和方法
公开(公告)号：WO0223583A9
公开(公告)日：2004-03-04
申请号：PCT/US0128272
申请日：2001-09-10
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： RADOVANOV SVETLANA B , MACINTOSH EDWARD , AYERS GARY , COREY PHILIP
IPC分类号： H01J37/304 , H01J37/317 , H01L23/58 , H01L21/66
CPC分类号： H01L22/32 , H01J37/304 , H01J37/3171 , H01J37/32935 , H01J2237/0041 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A monitor system and method for characterizing semiconductor processes including ion implantation processes is provided. The system includes a test wafer which has a plurality of sensors formed on its surface. The test wafer may be loaded into the process chamber of a process system and exposed, for example, to an implant. During implantation, electrical signals may be transmitted from the sensor to circuitry external of the chamber to evaluate a variety of ion beam and/or wafer properties. The property data may be displayed in real-time with the implant process so that processing parameters may be adjusted accordingly. The monitor system may be used, in particular, to determine properties related to beam and wafer surface charging which can provide an assessment of the efficiency of beam charge neutralization processes.
摘要翻译：提供了用于表征包括离子注入工艺的半导体工艺的监视器系统和方法。该系统包括在其表面上形成有多个传感器的测试晶片。测试晶片可以被加载到处理系统的处理室中，并且例如暴露于植入物。在植入期间，电信号可以从传感器传输到室外的电路，以评估各种离子束和/或晶片特性。属性数据可以通过植入过程实时显示，从而可以相应地调整处理参数。特别地，可以使用监视器系统来确定与束和晶片表面充电相关的属性，其可以提供束电荷中和过程的效率的评估。

4. 发明申请

WO0223583A2 MONITOR SYSTEM AND METHOD FOR SEMICONDUCTOR PROCESSES 审中-公开
标题翻译：用于半导体工艺的监测系统和方法
公开(公告)号：WO0223583A2
公开(公告)日：2002-03-21
申请号：PCT/US0128272
申请日：2001-09-10
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： RADOVANOV SVETLANA B , MACINTOSH EDWARD , AYERS GARY , COREY PHILIP
IPC分类号： H01J37/304 , H01J37/317 , H01L23/58
CPC分类号： H01L22/32 , H01J37/304 , H01J37/3171 , H01J37/32935 , H01J2237/0041 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A monitor system and method for characterizing semiconductor processes including ion implantation processes is provided. The system includes a test wafer which has a plurality of sensors formed on its surface. The test wafer may be loaded into the process chamber of a process system and exposed, for example, to an implant. During implantation, electrical signals may be transmitted from the sensor to circuitry external of the chamber to evaluate a variety of ion beam and/or wafer properties. The property data may be displayed in real-time with the implant process so that processing parameters may be adjusted accordingly. The monitor system may be used, in particular, to determine properties related to beam and wafer surface charging which can provide an assessment of the efficiency of beam charge neutralization processes.
摘要翻译：提供了一种用于表征包括离子注入工艺的半导体工艺的监测系统和方法。该系统包括具有形成在其表面上的多个传感器的测试晶片。测试晶片可以被装载到处理系统的处理室中并且暴露于例如植入物。在植入期间，可以将电信号从传感器传输到腔室外部的电路以评估各种离子束和/或晶片特性。可以使用植入过程实时显示属性数据，从而可以相应地调整处理参数。监测系统尤其可以用于确定与束和晶片表面充电相关的特性，其可以提供对束电荷中和过程的效率的评估。

5. 发明申请

WO2007059227A2 TECHNIQUE FOR PROVIDING A SEGMENTED ELECTROSTATIC LENS IN AN ION IMPLANTER 审中-公开
标题翻译：在离子植入物中提供分离的静电镜的技术
公开(公告)号：WO2007059227A2
公开(公告)日：2007-05-24
申请号：PCT/US2006044374
申请日：2006-11-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： RADOVANOV SVETLANA B , RENAU ANTHONY , BUFF JAMES STEVE
CPC分类号： H01J37/12 , H01J37/3171
摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
摘要翻译：公开了一种在离子注入机中提供分段静电透镜的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。透镜还可以包括偏置在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括独立地偏置以操纵离子束的能量和形状的多个段。

6. 发明申请

WO2007059197A2 TECHNIQUE FOR SHAPING A RIBBON-SHAPED ION BEAM 审中-公开
标题翻译：形成RIBBON形状离子束的技术
公开(公告)号：WO2007059197A2
公开(公告)日：2007-05-24
申请号：PCT/US2006044312
申请日：2006-11-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： RADOVANOV SVETLANA B , KELLERMAN PETER , BENVENISTE VICTOR M , LINDBERG ROBERT C , PURSER KENNETH H , ROCKWELL TYLER B , BUFF JAMES S , RENAU ANTHONY
CPC分类号： H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要： A technique for shaping a ribbon- shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon- shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges- of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon- shaped ion .beam.
摘要翻译：公开了一种用于成形带状离子束的技术。在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。该装置可以包括具有基本上矩形孔的静电透镜，用于带状离子束通过，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形成带状离子束。

7. 发明申请

WO2004013371A2 REMOVAL OF PLASMA DEPOSITED SURFACE LAYERS BY DILUTION GAS SPUTTERING 审中-公开
标题翻译：通过扩散气体溅射去除等离子体沉积的表面层
公开(公告)号：WO2004013371A2
公开(公告)日：2004-02-12
申请号：PCT/US0324158
申请日：2003-08-01
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： WALTHER STEVEN R , RADOVANOV SVETLANA B
IPC分类号： H01L21/302 , C23C14/48 , C23C14/56 , H01J37/32 , C23C14/00
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564
摘要： A method for limiting the formation of a deposited surface layer on a workpiece, such as a semiconductor wafer, during plasma implantation includes introducing a dopant gas and a dilution gas into a plasma doping chamber for ionization to form dopant gas ions and dilution gas ions, and accelerating the dopant gas ions and the dilution gas ions toward the workpiece. The dopant gas ions are implanted into the workpiece, and the dilution gas ions remove a deposited surface layer from the workpiece. The atomic masses of the dopant gas and the dilution gas may be similar to achieve efficient removal of the deposited surface layer.
摘要翻译：在等离子体注入期间限制在工件（例如半导体晶片）上沉积的表面层的形成的方法包括将掺杂气体和稀释气体引入等离子体掺杂室以进行电离以形成掺杂剂气体离子和稀释气体离子，并且将掺杂剂气体离子和稀释气体离子加速到工件。将掺杂剂气体离子注入到工件中，并且稀释气体离子从工件去除沉积的表面层。掺杂剂气体和稀释气体的原子质量可以类似于实现有效去除沉积的表面层。

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