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1. 发明申请

WO2004032177A2 APPARATUS AND METHOD FOR USE OF OPTICAL SYSTEM WITH PLASMA PROC ESSING SYSTEM 审中-公开
标题翻译：使用光学系统与等离子体处理系统的装置和方法
公开(公告)号：WO2004032177A2
公开(公告)日：2004-04-15
申请号：PCT/US2003/026208
申请日：2003-08-21
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej , LUDVIKSSON, Audunn
发明人： MITROVIC, Andrej , LUDVIKSSON, Audunn
IPC分类号： H01J37/32
CPC分类号： H01J37/32935 , H01J37/32972
摘要： A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical system has a window and is constructed and arranged to detect a plasma process condition through the window and a transmission condition of the window. The method includes detecting an optical emission from the plasma processing region and monitoring contamination of a window provided by the optical system.
摘要翻译：提供了一种与等离子体处理系统一起操作光学系统的等离子体处理系统和方法。等离子体处理系统包括与等离子体处理系统的等离子体处理室连通的光学系统。光学系统具有窗口，并被构造和布置成通过窗口和窗口的传输条件来检测等离子体处理条件。该方法包括检测来自等离子体处理区域的光发射并监测由光学系统提供的窗口的污染。

2. 发明申请

WO2002071631A2 APPARATUS AND METHOD OF IMPROVING IMPEDANCE MATCHING BETWEEN AN RF SIGNAL AND A MULTI-SEGMENTED ELECTRODE 审中-公开
标题翻译：改善RF信号与多分辨电极之间的阻抗匹配的装置和方法
公开(公告)号：WO2002071631A2
公开(公告)日：2002-09-12
申请号：PCT/US2002/005588
申请日：2002-02-27
申请人： TOKYO ELECTRON LIMITED , JETVIC, Jovan , MITROVIC, Andrej
发明人： JETVIC, Jovan , MITROVIC, Andrej
IPC分类号： H04B
CPC分类号： H01J37/32082 , H01J37/32183
摘要： An apparatus and method of improving impedance matching between a RF signal and a multi-segmented electrode in a plasma reactor powered by the RF signal. The apparatus and method phase shifts the RF signal driving one or more electrode segment of the multi-segmented electrode, amplifies the RF signal, and matches an impedance of the RF signal with an impedance of the electrode segment, where the RF signal is modulated prior to matching of the impedance of the RF signal. The apparatus and method directionally couples an output of the matching of the impedance of the RF signal and the electrode segment, and adjusts the output of the matching of the impedance of the RF signal such that a directionally coupled output signal and a reference signal representing the RF signal at the output of the master RF oscillator produces a demodulated signal of minimal amplitude.
摘要翻译：一种改善由RF信号供电的等离子体反应器中的RF信号和多段电极之间的阻抗匹配的装置和方法。该装置和方法相位移动驱动多分段电极的一个或多个电极段的RF信号，放大RF信号，并将RF信号的阻抗与电极段的阻抗匹配，其中RF信号先前被调制以匹配RF信号的阻抗。该装置和方法定向耦合RF信号和电极段的阻抗匹配的输出，并且调整RF信号的阻抗匹配的输出，使得定向耦合的输出信号和表示在主RF振荡器的输出处的RF信号产生最小振幅的解调信号。

3. 发明申请

WO2005076192A1 METHOD AND APPARATUS FOR DETERMINING CHEMISTRY OF PART’S RESIDUAL CONTAMINATION 审中-公开
标题翻译：用于确定部分残留污染化学的方法和装置
公开(公告)号：WO2005076192A1
公开(公告)日：2005-08-18
申请号：PCT/US2004/035519
申请日：2004-11-10
申请人： TOKYO ELECTRON LIMITED , CALABRESE, Paula , MITROVIC, Andrej
发明人： CALABRESE, Paula , MITROVIC, Andrej
IPC分类号： G06F19/00
CPC分类号： H01L21/67253
摘要： An electronic monitoring device that archives chemical exposures of a consumable part inside osemiconductor processing tool. The monitoring device includes a memory unit dedicated to the consumable part and which stores a history of the chemical exposures of the consumable part, a processor in communication with the memory unit, and a power supply circuit that supplies power to the processor and the memory unit.
摘要翻译：一种电子监控设备，用于记录Osemiconductor加工工具内的消耗部件的化学暴露。监视装置包括专用于消耗部件的存储单元，其存储消耗部件的化学曝光的历史，与存储器单元通信的处理器以及向处理器和存储器单元供电的电源电路。

4. 发明申请

WO2003012567A1 PLASMA CHAMBER WALL SEGMENT TEMPERATURE CONTROL 审中-公开
标题翻译：等离子室壁分段温度控制
公开(公告)号：WO2003012567A1
公开(公告)日：2003-02-13
申请号：PCT/US2002/023207
申请日：2002-07-19
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej , LONG, Maolin , MOROZ, Paul , FINK, Steven , JONES, William
发明人： MITROVIC, Andrej , LONG, Maolin , MOROZ, Paul , FINK, Steven , JONES, William
IPC分类号： G05D23/00
CPC分类号： H01L21/67248 , G05D23/1934 , H01J37/32522 , H01L21/67069 , H01L21/67109
摘要： A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.
摘要翻译：一种用于通过多个温度控制系统控制暴露于等离子体的壁内或其他表面内的等离子体室的温度的装置和方法。可以通过独立地控制壁或其它表面的段的温度来控制等离子体室内的等离子体处理。

5. 发明申请

WO2002071631A3 APPARATUS AND METHOD OF IMPROVING IMPEDANCE MATCHING BETWEEN AN RF SIGNAL AND A MULTI-SEGMENTED ELECTRODE 审中-公开
公开(公告)号：WO2002071631A3
公开(公告)日：2002-09-12
申请号：PCT/US2002/005588
申请日：2002-02-27
申请人： TOKYO ELECTRON LIMITED , JETVIC, Jovan , MITROVIC, Andrej
发明人： JETVIC, Jovan , MITROVIC, Andrej
IPC分类号： H01L21/66
摘要： An apparatus and method of improving impedance matching between a RIF signal and a multi-segmented electrode in a plasma reactor powered by the RF signal. The apparatus and method phase shifts the RIF signal driving one or more electrode segment of the multi-segmented electrode, amplifies the RIF signal, and matches an impedance of the RIF signal with an impedance of the electrode segment, where the RIF signal is modulated prior to matching of the impedance of the RIF signal. The apparatus (fig. 3) and method directionally couples an output of the matching of the impedance of the RIF signal and the electrode segment, and adjusts the output of the matching of the impedance of the RF signal such that a directionally coupled output signal and a reference signal representing the RIF signal at the output of the master RF oscillator produces a demodulated signal of minimal amplitude.

6. 发明申请

WO2002101377A1 APPARATUS AND METHOD FOR DETERMINING CLAMPING STATUS OF SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于确定半导体波形钳位状态的装置和方法
公开(公告)号：WO2002101377A1
公开(公告)日：2002-12-19
申请号：PCT/US2002/014582
申请日：2002-05-09
申请人： TOKYO ELECTRON LIMITED , JONES, William , MOROZ, Paul , MITROVIC, Andrej
发明人： JONES, William , MOROZ, Paul , MITROVIC, Andrej
IPC分类号： G01N29/00
CPC分类号： H01L21/6831 , G01N29/11 , G01N29/4427 , G01N29/48 , G01N2291/011 , G01N2291/0231 , G01N2291/044 , G01N2291/105 , G01N2291/2697 , G01N2291/2698 , H01L21/67259
摘要： An apparatus determines how well a semiconductor wafer (4) is clamped to a support member (1). The apparatus has at least one ultrasonic transducer (2a,2b,2c,2d) configured to emit ultrasonic energy (3) toward an interface between the wafer (4) and the support member (1) so that the interface generates echo signals, and a data processing unit (11) configured to analyze the echo signals to arrive at a determination as to how well the semiconductor wafer (4) is clamped to the support member (1) before semiconductor process is started. A first method ensures that a wafer (4) is securely clamped to a support member before a semiconductor process is started.A second method verifies proper de-clamping of a semiconductor wafer (4) from a support member (1) before the semiconductor wafer (4) is removed from the support member (1) upon completion of a semiconductor process.
摘要翻译：一种装置确定半导体晶片（4）如何被夹紧到支撑构件（1）上。该装置具有至少一个超声波换能器（2a，2b，2c，2d），其构造成向晶片（4）和支撑构件（1）之间的界面发射超声能量（3），使得界面产生回波信号，以及数据处理单元（11），被配置为分析回波信号以得出关于在半导体处理开始之前半导体晶片（4）被夹持到支撑构件（1）的程度的确定。第一种方法确保在半导体工艺开始之前将晶片（4）牢固地夹持到支撑构件上。第二种方法在半导体晶片之前验证半导体晶片（4）从支撑构件（1）的适当的去夹紧（4）在半导体工艺完成时从支撑构件（1）移除。

7. 发明申请

WO2002075790A2 METHOD AND APPARATUS FOR TRANSFERRING HEAT FROM A SUBSTRATE TO A CHUCK 审中-公开
标题翻译：用于将热量从基片转移到卡盘的方法和设备
公开(公告)号：WO2002075790A2
公开(公告)日：2002-09-26
申请号：PCT/US2002/002816
申请日：2002-02-04
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej , LIU, Lianjun
发明人： MITROVIC, Andrej , LIU, Lianjun
IPC分类号： H01L21/00
CPC分类号： H01L21/67109 , C23C16/4586 , C30B25/10 , C30B25/12 , H01L21/6831 , H01L21/6833
摘要： A chuck method of and apparatus (50, 150, 300) for supporting a substrate (W) during processing of the substrate, where the substrate has a lower surface (W L ). The apparatus facilitates heat transfer away from the substrate during processing of the substrate. The apparatus comprises a chuck body (60) having an outer edge (70) and a rough upper surface (64 U ). The substrate is arranged adjacent the rough surface such that the substrate lower surface and the roughened upper surface form a gap (100) therebetween. The apparatus further includes a central gas conduit (80) passing through the chuck body. The central conduit has a second end (82b) open to the roughened upper surface and a first end opposite the second end connected to a gas source (86). The conduit is arranged such that a gas can flow through the conduit into the gap and toward the chuck body outer edge. The gas used has an atomic or molecular weight that is greater than that of helium. The surface roughness, the substrate lower surface and the flow of the heavier gas in the gap contribute to defining an accommodation coefficient α and a mean free path λ such that the ratio α/λ is higher than that of prior art apparatus.
摘要翻译：一种用于在衬底的处理期间支撑衬底（W）的卡盘方法和设备（50,150,300），其中衬底具有下表面（W >）。该设备有助于在处理基板期间从基板传递热量。该设备包括具有外边缘（70）和粗糙上表面（64）的卡盘主体（60）。衬底布置在粗糙表面附近，使得衬底下表面和粗糙化的上表面在其间形成间隙（100）。该设备还包括穿过卡盘主体的中心气体导管（80）。中心导管具有对粗糙的上表面敞开的第二端（82b）和与连接到气体源（86）的第二端相对的第一端。导管布置成使得气体可以通过导管流入间隙并朝向卡盘主体外边缘。所用气体的原子或分子量大于氦气。表面粗糙度，基板下表面和间隙中较重气体的流动有助于确定调节系数α和平均自由程λ，使得比率α/λ高于现有技术设备的α/λ。

8. 发明申请

WO2004095531A2 METHOD AND SYSTEM FOR TEMPERATURE CONTROL OF A SUBSTRATE 审中-公开
标题翻译：基板温度控制方法及系统
公开(公告)号：WO2004095531A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/006078
申请日：2004-03-17
申请人： TOKYO ELECTRON LTD , MITROVIC, Andrej
发明人： MITROVIC, Andrej
IPC分类号： H01L
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109
摘要： A substrate holder for supporting a substrate in a processing system and controlling the temperature thereof is described. The substrate holder comprises a first heating element positioned in a first region for elevating the temperature of the first region. A second heating element positioned in a second region is configured to elevate the temperature in the second region. Furthermore, a first controllably insulating element is positioned below the first heating element, and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the first region. A second controllably insulating element is positioned below the second heating element and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the second region.
摘要翻译：描述了用于在处理系统中支撑衬底并控制其温度的衬底保持器。衬底保持器包括位于第一区域中的第一加热元件，用于升高第一区域的温度。定位在第二区域中的第二加热元件构造成升高第二区域中的温度。此外，第一可控绝缘元件位于第一加热元件的下方，并且被配置为控制基板与位于第一区域中的至少一个冷却元件之间的热传递。第二可控绝缘元件位于第二加热元件的下方，并且被配置为控制基板与位于第二区域中的至少一个冷却元件之间的热传递。

9. 发明申请

WO2002104085A3 A CLOSED-DRIFT HALL EFFECT PLASMA VACUUM PUMP FOR PROCESS REACTORS 审中-公开
公开(公告)号：WO2002104085A3
公开(公告)日：2002-12-27
申请号：PCT/US2002/015944
申请日：2002-05-21
申请人： TOKY0 ELECTRON LIMITED , QUON, Bill, H. , ANTLEY, Samuel , MITROVIC, Andrej
发明人： QUON, Bill, H. , ANTLEY, Samuel , MITROVIC, Andrej
IPC分类号： H01J37/32 , H01J41/12 , H05H1/54
摘要： A closed-drift Hall effect plasma vacuum pump includes one or more pumping conduits which are linked with a radial magnetic field. The magnetic field separates a plasma from a plasma at a higher pressure which is formed by cross-field plasma transport from a plasma processing region.

10. 发明申请

WO2002104085A2 A CLOSED-DRIFT HALL EFFECT PLASMA VACUUM PUMP FOR PROCESS REACTORS 审中-公开
标题翻译：用于过程反应器的封闭式霍尔效应等离子体真空泵
公开(公告)号：WO2002104085A2
公开(公告)日：2002-12-27
申请号：PCT/US2002/015944
申请日：2002-05-21
申请人： TOKY0 ELECTRON LIMITED , QUON, Bill, H. , ANTLEY, Samuel , MITROVIC, Andrej
发明人： QUON, Bill, H. , ANTLEY, Samuel , MITROVIC, Andrej
IPC分类号： H05H
CPC分类号： H01J27/143 , H01J37/3266 , H01J37/32834 , H05H1/54
摘要： A closed-drift Hall effect plasma vacuum pump includes one or more pumping conduits which are linked with a radial magnetic field. The magnetic field separates a plasma from a plasma at a higher pressure which is formed by cross-field plasma transport from a plasma processing region.
摘要翻译：闭合漂移霍尔效应等离子体真空泵包括一个或多个与径向磁场相连的泵送管道。磁场将等离子体从等离子体处理区域的交叉场等离子体传输形成的较高压力下分离出来。

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