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1. 发明申请

WO2005104164A3 HONEYCOMB OPTICAL WINDOW DEPOSITION SHIELD AND METHOD FOR A PLASMA PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2005104164A3
公开(公告)日：2005-11-03
申请号：PCT/US2005/003032
申请日：2005-01-27
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , MITROVIC, Andrej, S. , CALABRESE, Paula, A.
发明人： FINK, Steven, T. , MITROVIC, Andrej, S. , CALABRESE, Paula, A.
IPC分类号： C23C14/34 , C23C16/00 , H05H1/00
摘要： An optical window deposition shield (18) including a backing plate (82) having a through hole, and a honeycomb structure (80) having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure (80). Each cell of the honeycomb structure (80) has an aspect ratio of length to diameter sufficient to impede a processing plasma from traveling through the full length of the cell. A coupling device configured to couple the honeycomb core structure (80) to the backing plate (82) such that the honeycomb structure (80) is aligned with at least a portion of the through hole in the backing plate (82). The optical window deposition shield (18) shields the optical window (17) of a plasma processing apparatus from contact with the plasma.

2. 发明申请

WO2004095502A2 PLASMA PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：等离子体处理系统和方法
公开(公告)号：WO2004095502A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/001406
申请日：2004-01-21
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , MOROZ, Paul , STRANG, Eric, J. , MITROVIC, Andrej, S.
发明人： FINK, Steven, T. , MOROZ, Paul , STRANG, Eric, J. , MITROVIC, Andrej, S.
IPC分类号： H01J37/00
CPC分类号： H01J37/3244 , H01J2237/022
摘要： A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.
摘要翻译：等离子体处理系统包括包含等离子体处理区域的腔室和构造和布置成在处理区域内的腔室内支撑衬底的卡盘。等离子体处理系统还包括至少一个与室连通的气体注入通道，并且构造成便于通过吹扫气体从腔室中除去颗粒。在一个实施例中，等离子体处理系统可以包括电极，其被配置为当电极用DC或RF功率偏置时通过静电力吸引或排斥腔室中的颗粒。一种在等离子体处理系统中处理衬底的方法，包括通过与室连通的至少一个气体注入通道供应净化气体来去除等离子体处理系统的腔室中的颗粒。

3. 发明申请

WO2006093578A3 CHUCK PEDESTAL SHIELD 审中-公开
公开(公告)号：WO2006093578A3
公开(公告)日：2006-09-08
申请号：PCT/US2006/001683
申请日：2006-01-19
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S. , FINK, Steven, T.
发明人： MITROVIC, Andrej, S. , FINK, Steven, T.
IPC分类号： C23F1/00 , C23C16/00
摘要： An apparatus for processing semiconductors includes a processing chamber including a plurality of chamber walls, a substrate holder, positioned within the processing chamber and configured to support the substrate, and a linear displacement device, coupled between a base wall of the plurality of walls and the substrate holder and configured to move the substrate holder relative to the base wall. A shielding part extending from the substrate holder to be in close parallel relation with at least one of the plurality of walls such that a first area of the processing chamber is substantially shielded from a processing environment to which the substrate is exposed.

4. 发明申请

WO2006062576A3 METHOD AND APPARATUS FOR IMPROVED BAFFLE PLATE 审中-公开
公开(公告)号：WO2006062576A3
公开(公告)日：2006-06-15
申请号：PCT/US2005/036873
申请日：2005-10-13
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T.
发明人： FINK, Steven, T.
IPC分类号： C23C16/455 , H01L21/3065
摘要： An apparatus related to plasma chambers (10) used for processing semiconductor substrates (35) and specifically to improvements in pumping baffle plates (64) used in plasma sources. An apparatus and method for making a baffle plate assembly formed from a modified baffle plate blank wherein a variety of pumping features (302) are formed in the baffle plate blank and opened in a planar material removal operation.

5. 发明申请

WO2004079778A2 APPARATUS FOR ATTACHMENT OF SEMICONDUCTOR HARDWARE 审中-公开
标题翻译：用于连接半导体硬件的装置
公开(公告)号：WO2004079778A2
公开(公告)日：2004-09-16
申请号：PCT/US2004/003361
申请日：2004-02-26
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T.
发明人： FINK, Steven, T.
IPC分类号： H01L
CPC分类号： H01J37/3244 , H01J37/32633 , H01L21/67069 , H01L21/6719
摘要： A plasma processing method and system including an apparatus and method for securing semiconductor hardware without the use of exposed threaded hardware. Consistent mechanical and electrical contact between parts in the assembled condition can also be achieved.
摘要翻译：一种等离子体处理方法和系统，包括用于固定半导体硬件的装置和方法，而不使用暴露的螺纹硬件。也可以实现在组装状态下部件之间的一致的机械和电气接触。

6. 发明申请

WO2006071341A2 METHOD AND APPARATUS TO DETERMINE CONSUMABLE PART CONDITION 审中-公开
标题翻译：确定消耗部分条件的方法和装置
公开(公告)号：WO2006071341A2
公开(公告)日：2006-07-06
申请号：PCT/US2005/038176
申请日：2005-10-25
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T.
发明人： FINK, Steven, T.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01L21/67288 , H01J37/32935
摘要： A system for monitoring a condition of a consumable component in a substrate processing system that includes a tapered plug having a first axis, a second axis that intersects the first axis, a top portion with first width, a bottom portion with a second width, and sidewalls joining said top and bottom portions respectively. The tapered plug has a cross sectional profile that is substantially parallel to the top and bottom portions and a cross sectional width that varies according to a location where the cross sectional profile intersects the second axis. At least one of the tapered plugs is inserted into at least one consumable component of the substrate processing system such that the top portion of the tapered plug is exposed to a processing environment of a plasma processing system.
摘要翻译：一种用于监测基板处理系统中的可消耗部件的状况的系统，包括：具有第一轴的锥形塞，与第一轴相交的第二轴，具有第一宽度的顶部，具有第二宽度的底部;以及分别连接所述顶部和底部的侧壁。锥形塞具有基本上平行于顶部和底部的横截面轮廓，并且横截面宽度根据截面轮廓与第二轴线相交的位置而变化。锥形插塞中的至少一个被插入到基板处理系统的至少一个可消耗部件中，使得锥形插头的顶部暴露于等离子体处理系统的处理环境。

7. 发明申请

WO2005052981A1 METHOD AND APPARATUS FOR IMPROVED ELECTRODE PLATE 审中-公开
标题翻译：改进电极板的方法和装置
公开(公告)号：WO2005052981A1
公开(公告)日：2005-06-09
申请号：PCT/US2004/034102
申请日：2004-10-18
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , STRANG, Eric, J. , LANDIS, Michael
发明人： FINK, Steven, T. , STRANG, Eric, J. , LANDIS, Michael
IPC分类号： H01J37/32
CPC分类号： H01J37/32605 , H01J37/32009 , H01J37/3244
摘要： An electrode plate (26), configured to be coupled to an electrode (28) in a plasma processing system, comprises a plurality of gas injection holes (100) configured to receive gas injection devices (110). The electrode plate comprises three or more mounting holes (140), wherein the electrode plate is configured to be coupled with an electrode in the plasma processing system by aligning and coupling the three or more mounting holes with three or more mounting screws attached to the electrode.
摘要翻译：构造成耦合到等离子体处理系统中的电极（28）的电极板（26）包括构造成接收气体注入装置（110）的多个气体注入孔（100）。电极板包括三个或更多个安装孔（140），其中电极板被配置为通过将三个或更多个安装孔与三个或更多个安装螺钉连接在一起而与等离子体处理系统中的电极耦合。

8. 发明申请

WO2004070761A2 METHOD AND APPARATUS FOR IMPROVED FASTENING HARDWARE 审中-公开
标题翻译：改进硬件的方法和装置
公开(公告)号：WO2004070761A2
公开(公告)日：2004-08-19
申请号：PCT/US2004/001914
申请日：2004-01-26
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T.
发明人： FINK, Steven, T.
IPC分类号： H01J
CPC分类号： H01J37/32477
摘要： This invention relates to an improved component for a plasma processing system, and more particularly, to fasteners for internal chamber parts in a plasma processing chamber. Further, this invention relates to a method of manufacturing such a fastener.
摘要翻译：本发明涉及一种用于等离子体处理系统的改进组件，更具体地说，涉及等离子体处理室内部腔室部件的紧固件。此外，本发明涉及制造这种紧固件的方法。

9. 发明申请

WO2003010517A1 METHOD AND APPARATUS FOR MONITORING THE CONDITION OF PLASMA EQUIPMENT 审中-公开
标题翻译：用于监测等离子体设备状态的方法和装置
公开(公告)号：WO2003010517A1
公开(公告)日：2003-02-06
申请号：PCT/US2002/023477
申请日：2002-07-24
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , WINDHORN, Thomas
发明人： FINK, Steven, T. , WINDHORN, Thomas
IPC分类号： G01N21/00
CPC分类号： H01J37/32862 , G01N21/59 , H01J37/32935
摘要： An apparatus (100) senses a degree of cleanliness of a plasma reactor having a chamber (102) containing a plasma (103) that emits light (104) during a process conducted in the chamber (102). The apparatus (100) also has a light sensing element (180), configured to sense an intensity of the light (104) emitted by the plasma (103) after the light (104) passes through a film (135) that accrues in the chamber (102) during the process, and to provide a light intensity indication signal, and an electronics assembly (170) configured to receive the light intensity indication signal and to provide an indication of the degree of cleanliness of the plasma reactor.
摘要翻译：在室（102）中进行的过程中，装置（100）感测具有包含发射光（104）的等离子体（103）的室（102）的等离子体反应器的清洁度。该装置（100）还具有一个感光元件（180），用于感测在光（104）通过膜（135）中产生的膜（135）之后由等离子体（103）发射的光（104）的强度，（102），并且提供光强度指示信号，以及电子组件（170），其被配置为接收光强度指示信号并且提供等离子体反应器的清洁程度的指示。

10. 发明申请

WO2002014810A3 METHOD AND APPARATUS FOR TUNING A PLASMA REACTOR CHAMBER 审中-公开
公开(公告)号：WO2002014810A3
公开(公告)日：2002-02-21
申请号：PCT/US2001/024570
申请日：2001-08-07
申请人： TOKYO ELECTRON LIMITED , STRANG, Eric, J. , JOHNSON, Wayne, L. , HOSTETLER, Robert, G. , FINK, Steven, T.
发明人： STRANG, Eric, J. , JOHNSON, Wayne, L. , HOSTETLER, Robert, G. , FINK, Steven, T.
IPC分类号： H01J37/32
摘要： A plasma reactor (10) or vacuum processing apparatus is provided with an orifice plate assembly (40). The orifice plate assembly (40) includes an upper plate (42) and a lower plate (44). Each plate is configured with through holes (46A-46N, 48A-48N). The upper and lower orifice plates (42, 22) are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber (12) a discharge reactor (10) such that the chuck assembly (14) is disposed within an opening in the orifice plate assembly (40). The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber (12).

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