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    • 8. 发明申请
    • A METHOD AND APPARATUS FOR TESTING A MEMORY CIRCUIT WITH PARALLEL BLOCK WRITE OPERATION
    • 用于测试具有并行块写操作的存储器电路的方法和装置
    • WO1995030227A1
    • 1995-11-09
    • PCT/GB1995000978
    • 1995-04-28
    • TEXAS INSTRUMENTS INCORPORATEDTEXAS INSTRUMENTS LIMITED
    • TEXAS INSTRUMENTS INCORPORATEDTEXAS INSTRUMENTS LIMITEDDORNEY, Timothy, DominicBALISTRERI, Anthony, Michael
    • G11C29/00
    • G11C29/28
    • An integrated circuit memory device (21) includes plural input/output pins (30, 127 and others) and plural arrays of addressable storage cells (31-46). A set of circuits (51, 68, 70, 71-86, 90) provides access to a unique storage location in each array (31-46) through a given row and column address. A writing circuit (47, 68, 70, 71-86, 91-106, 131-146), designed for test, provides in parallel plural copies of a test data bit. The test data bit is applied through a single pin (30) and a common data-in lead (68), for storage in an addressed storage cell in each of the arrays. A readout circuit (110, 111, 112, 171, 127, 201-216, 131-146) is arranged for reading out the stored test data bit from the addressed storage cell in each of the arrays (31-46). The writing circuit, while in a block write test mode, stores the test data bit on the common data-in lead (68) in a block of address locations in each array (31-46).
    • 集成电路存储器件(21)包括多个输入/输出引脚(30,127等)和多个可寻址存储单元阵列(31-46)。 一组电路(51,68,70,71-86,90)通过给定的行和列地址提供对每个阵列(31-46)中唯一存储位置的访问。 设计用于测试的写入电路(47,68,70,71-86,91-106,131-146)并行提供测试数据位的多个副本。 测试数据位通过单个引脚(30)和公共数据输入引线(68)施加,用于存储在每个阵列中的寻址存储单元中。 读出电路(110,111,112,171,127,201-216,131-146)用于从每个阵列(31-46)中的所寻址的存储单元读出存储的测试数据位。 写入电路在块写入测试模式下,将测试数据位存储在每个阵列(31-46)中的地址位置块中的公共数据引入线(68)中。