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1. 发明申请

WO2016086381A1 沟槽栅功率半导体场效应晶体管审中-公开
公开(公告)号：WO2016086381A1
公开(公告)日：2016-06-09
申请号：PCT/CN2014/092997
申请日：2014-12-04
申请人：冯淑华
发明人：冯淑华 , 周贤达 , 单建安
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66348 , H01L21/265 , H01L21/28556 , H01L21/3065 , H01L21/324 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/0856 , H01L29/1095 , H01L29/41766 , H01L29/66295 , H01L29/66333 , H01L29/6634 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/78 , H01L29/7813
摘要：提供具有重掺杂的多晶硅源区（11）的沟槽栅功率MOSFET（TMOS／UMOS）结构。所述多晶硅源区（11）通过淀积形成，并且沟槽形接触孔（42）用于所述源区处，以便获得小接触电阻和小元胞尺寸。还可以实施于IGBT中。

2. 发明申请

WO2014122472A1 A BIPOLAR JUNCTION TRANSISTOR STRUCTURE 审中-公开
标题翻译：双极结结晶体结构
公开(公告)号：WO2014122472A1
公开(公告)日：2014-08-14
申请号：PCT/GB2014/050368
申请日：2014-02-07
申请人： WOOD, John
发明人： WOOD, John
IPC分类号： H01L29/732 , H01L21/331 , H01L29/08 , H01L29/10
CPC分类号： H01L29/1004 , H01L29/0804 , H01L29/0821 , H01L29/66295 , H01L29/7325
摘要： We disclose a bi-directional bipolar junction transistor (BJT) structure, comprising: a base region of a first conductivity type, wherein said base region constitutes a drift region of said structure; first and second collector/emitter (CE) regions, each of a second conductivity type adjacent opposite ends of said base region; wherein said base region is lightly doped relative to said collector/emitter regions; the structure further comprising: a base connection to said base region, wherein said base connection is within or adjacent to said first collector/emitter region.
摘要翻译：我们公开了双向双极结型晶体管（BJT）结构，其包括：第一导电类型的基极区域，其中所述基极区域构成所述结构的漂移区域; 第一和第二集电极/发射极（CE）区域，每个与所述基极区域的相对端相邻的第二导电类型; 其中所述基极区域相对于所述集电极/发射极区域轻掺杂; 所述结构还包括：与所述基极区域的基极连接，其中所述基极连接在所述第一集电极/发射极区域内或邻近所述第一集电极/发射极区域。

3. 发明申请

WO2011077181A1 SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有多层接触的半导体器件及其制造方法
公开(公告)号：WO2011077181A1
公开(公告)日：2011-06-30
申请号：PCT/IB2009/055864
申请日：2009-12-21
申请人： NXP B.V. , HABENICHT, Sönke , OELGESCHLAEGER, Detlef , SCHUMACHER, Olrik , BERGLUND, Stefan Bengt
发明人： HABENICHT, Sönke , OELGESCHLAEGER, Detlef , SCHUMACHER, Olrik , BERGLUND, Stefan Bengt
IPC分类号： H01L21/331 , H01L29/06 , H01L29/417 , H01L29/732
CPC分类号： H01L29/66303 , H01L29/0692 , H01L29/0813 , H01L29/1004 , H01L29/41708 , H01L29/66295 , H01L29/732
摘要： The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
摘要翻译：本发明提供具有多层接触结构的半导体。多层结构包括设置在半导体的有源区域上的金属接触件和放置在金属接触件上的金属接触延伸部分。

4. 发明申请

WO02005341A1 METHOD OF MANUFACTURING POWER SILICON TRANSISTOR 审中-公开
标题翻译：制造功率硅晶体管的方法
公开(公告)号：WO02005341A1
公开(公告)日：2002-01-17
申请号：PCT/AM2001/000002
申请日：2001-01-10
IPC分类号： H01L21/3063 , H01L21/331 , H01L29/32 , H01L21/322
CPC分类号： H01L29/66295 , H01L21/3063 , H01L29/32 , H01L29/66272
摘要： The present invention relates to power semiconductor techniques and may be used for manufacturing of power silicon transistors. The method comprises steps providing the lightly doped N- silicon substrate, formation the porous silicon layer on the backside of substrate by anodic etching, and growing of the highly doped N+ epitaxial layer on the porous silicon layer.
摘要翻译：本发明涉及功率半导体技术，并且可以用于制造功率硅晶体管。该方法包括提供轻掺杂的N-硅衬底的步骤，通过阳极蚀刻在衬底的背面形成多孔硅层，以及在多孔硅层上生长高掺杂的N +外延层。

5. 发明申请

WO9946821A3 SEMICONDUCTOR SWITCH DEVICES AND THEIR MANUFACTURE 审中-公开
标题翻译：半导体开关器件及其制造
公开(公告)号：WO9946821A3
公开(公告)日：1999-11-25
申请号：PCT/IB9900202
申请日：1999-02-04
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS SVENSKA AB
发明人： SCHLIGTENHORST HOLGER , HURKX GODEFRIDUS A M , WARWICK ANDREW M
IPC分类号： H01L29/73 , H01L21/329 , H01L21/331 , H01L29/732 , H01L29/868 , H01L21/04 , H01L29/772
CPC分类号： H01L29/66136 , H01L29/66295 , H01L29/7325 , H01L29/868
摘要： In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accordance with the invention, this first region (1) includes three distinct zones, namely a low-doped zone (23), a high-doped zone (25), and an intermediate additional zone (24). The low-doped zone (23) is provided by a semiconductor body portion (11) having a substantially uniform p-type doping concentration (P-) and forms the p-n junction (12) with the second region (2). The distinct additional zone (24) is present between the low-doped zone (23) and the high-doped zone (25). This triple-zone formation for the first region (1) permits an improvement in switching behaviour, e.g. in terms of fall-time and energy dissipation during turn-off of the device (T, D). A very low doping (P-) can be used for low-doped zone (23) so that, in the off-state of the device (T, D), this zone (23) and also the additional zone (24) can be fully depleted. The additional zone (24) having its additional doping concentration provides a path for extracting residual charge carriers from the low-doped zone (23) when the device (T, D) is being switched off.
摘要翻译：在诸如NPN晶体管（T）或功率开关二极管（D）的半导体开关器件中，一个导电类型的多区域第一区域（1）形成具有第二区域（2）的可切换pn结（12）的相反导电类型。根据本发明，该第一区域（1）包括三个不同的区域，即低掺杂区域（23），高掺杂区域（25）和中间附加区域（24）。低掺杂区域（23）由具有基本均匀的p型掺杂浓度（P-）的半导体本体部分（11）提供，并与第二区域（2）形成p-n结（12）。不同的附加区（24）存在于低掺杂区（23）和高掺杂区（25）之间。用于第一区域（1）的这种三区形成允许改变开关行为，例如，在设备（T，D）关闭期间的下降时间和能量耗散方面。对于低掺杂区域（23），可以使用非常低的掺杂（P-），使得在器件（T，D）的截止状态下，该区域（23）以及附加区域（24）可以充分耗尽具有其附加掺杂浓度的附加区域（24）提供了当器件（T，D）被切断时从低掺杂区域（23）提取残余电荷载流子的路径。

6. 发明申请

WO2012139633A1 BIPOLAR TRANSISTOR WITH GATE ELECTRODE OVER THE EMITTER BASE JUNCTION 审中-公开
标题翻译：带有电极的双极晶体管通过发射极基极连接
公开(公告)号：WO2012139633A1
公开(公告)日：2012-10-18
申请号：PCT/EP2011/055731
申请日：2011-04-12
申请人： X-FAB SEMICONDUCTOR FOUNDRIES AG , TONER, Brendan , CAO, Xuezhou , FANG, Fred , TAN, Chuan Chien
发明人： TONER, Brendan , CAO, Xuezhou , FANG, Fred , TAN, Chuan Chien
IPC分类号： H01L29/732 , H01L29/40 , H01L21/331
CPC分类号： H01L29/73 , H01L29/402 , H01L29/66272 , H01L29/66295 , H01L29/7322
摘要： An at least partially conductive element, for example a poly silicon ring, is provided over the base emitter junction of a bipolar junction transistor. When the at least partially conductive element is charged the recombination current is reduced in regions of the base adjacent to the element. This results in improved linearity of the gain of the transistor.
摘要翻译：在双极结型晶体管的基极发射极结上方提供至少部分导电的元件，例如多晶硅环。当至少部分导电元件被充电时，复合电流在邻近元件的基底的区域中减小。这导致晶体管的增益的线性度提高。

7. 发明申请

WO99012211A1 BIPOLAR POWER TRANSISTORS AND MANUFACTURING METHOD 审中-公开
标题翻译：双极功率晶体管和制造方法
公开(公告)号：WO99012211A1
公开(公告)日：1999-03-11
申请号：PCT/SE1998/001479
申请日：1998-08-18
IPC分类号： H01L21/205 , H01L21/331 , H01L21/74 , H01L29/08 , H01L29/73 , H01L21/265 , H01L23/66
CPC分类号： H01L29/66295 , H01L21/74 , H01L29/0821 , H01L29/66272 , H01L29/73 , H01L2223/6644
摘要： The present invention relates to a bipolar power transistor intended for radio frequency applications, especially for use in an amplifier stage in a radio base station, and to a method for manufacturing the bipolar power transistor. The power transistor comprises a substrate (13), an epitaxial collector layer (15) on the substrate (13), a base (19) and an emitter (21) formed in the collector layer (15). The degree of doping Nc(x) of the collector layer varies from its upper surface (24) and downwards to at least half the depth of the collector layer, essentially according to a polynom of at least the second degree, a0 + a1, + a2x + ..., where a0 is the degree of doping at the upper surface (24); x is the vertical distance from the same surface (24) and a1, a2, ... are constants. The transistor can further comprise an at least approximately 2 mu m thick insulation oxide (17) between the epitaxial collector layer (15) and higher situated metallic connections layers (31, 33).
摘要翻译：本发明涉及用于无线电频率应用的双极功率晶体管，特别是用于无线电基站中的放大器级的双功能晶体管，以及制造双极型功率晶体管的方法。功率晶体管包括衬底（13），在衬底（13）上的外延集电极层（15），形成在集电极层（15）中的基极（19）和发射极（21）。集电极层的掺杂度Nc（x）从其上表面（24）向下变化到集电极层的深度的至少一半，基本上根据至少第二度的多项式a0 + a1 + a2x2 + ...，其中a0是上表面（24）处的掺杂度; x是与同一表面（24）的垂直距离，a1，a2，...是常数。晶体管还可以包括在外延收集层（15）和较高位置的金属连接层（31,33）之间的至少约2μm厚的绝缘氧化物（17）。

8. 发明申请

WO1997003458A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO1997003458A1
公开(公告)日：1997-01-30
申请号：PCT/JP1996001906
申请日：1996-07-09
申请人： ROHM CO., LTD. , SAKAMOTO, Kazuhisa
发明人： ROHM CO., LTD.
IPC分类号： H01L21/322
CPC分类号： H01L29/66295 , H01L21/263 , Y10S148/003 , Y10S148/004 , Y10S148/08 , Y10S148/09 , Y10S148/092
摘要： A method for manufacturing a semiconductor device in which crystal defects are generated in a semiconductor crystal by irradiating a semiconductor substrate (1) with a particle beam. In the preceding process of the irradiation process, the substrate (1) is heat-treated such that the temperature of the substrate (1) is raised rapidly in ten minutes to 550-850 DEG C and maintained for one second to 60 minutes. Crystal defects are generated in the crystal by irradiating the crystal with such a particle beam as an electron beam, the life time of carriers is shortened, and accordingly the switching speed is increased, not lowering the electric characteristics such as the current amplification factor. Thus a semiconductor device having both a high switching speed and good electric characteristics is fabricated.
摘要翻译：一种半导体器件的制造方法，其中通过用半导体衬底（1）照射粒子束，在半导体晶体中产生晶体缺陷。在上述照射工序中，对基板（1）进行热处理，使基板（1）的温度在10分钟内快速上升至550〜850℃，保持1秒〜60分钟。通过用诸如电子束的这种粒子束照射晶体，在晶体中产生晶体缺陷，载流子的寿命缩短，因此开关速度增加，不会降低诸如电流放大系数的电特性。因此，制造具有高开关速度和良好电特性的半导体器件。

9. 发明申请

WO2017049006A1 OPERATION OF DOUBLE-BASE BIPOLAR TRANSISTORS WITH ADDITIONAL TIMING PHASES AT SWITCHING TRANSITIONS 审中-公开
标题翻译：双相双极晶体管在开关转换时的附加时序相位的操作
公开(公告)号：WO2017049006A1
公开(公告)日：2017-03-23
申请号：PCT/US2016/052008
申请日：2016-09-15
申请人： IDEAL POWER INC.
发明人： ALEXANDER, William C. , BLANCHARD, Richard A.
IPC分类号： H02M3/158 , H03K17/60 , H01L29/747
CPC分类号： H03K17/60 , H01L29/1004 , H01L29/66295 , H01L29/732 , H02M3/158 , H03K17/04126 , H03K17/567 , H03K2217/0054
摘要： Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turnoff: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate.
摘要翻译：用于操作双基双向功率双极晶体管的方法和系统。两个定时相位用于转换为截止：其中每个基极短接到其最近的发射极/集电极区域，第二个定时相位将负驱动施加到发射极侧基极以减少体基板中的少数载流子群。

10. 发明申请

WO2008124671A1 ROBUST ESD CELL 审中-公开
标题翻译：坚固的ESD电池
公开(公告)号：WO2008124671A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059538
申请日：2008-04-07
申请人： ANALOG DEVICES, INC. , GERSTENHABER, Moshe , COONEY, Padraig
发明人： GERSTENHABER, Moshe , COONEY, Padraig
IPC分类号： H01L21/329 , H01L21/331 , H01L29/73 , H01L29/732 , H01L29/861
CPC分类号： H01L29/7322 , H01L27/0259 , H01L29/0804 , H01L29/0813 , H01L29/66121 , H01L29/66287 , H01L29/66295 , H01L29/73 , H01L29/861
摘要： An electric discharge device includes a bipolar transistor configuration comprising a base (46), an emitter (48), and a collector (44). At least one pinched resistor (50) is formed in a region comprising both the base and emitter so as to produce a pinched resistive area that develops a voltage once the bipolar transistor experiences junction breakdown.
摘要翻译：放电装置包括双极晶体管配置，其包括基极（46），发射极（48）和集电极（44）。在包括基极和发射极的区域中形成至少一个夹持电阻器（50），以产生一旦双极晶体管经受结击穿就产生电压的夹持电阻区域。

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