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1. 发明申请

WO2008114958A1 APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING 审中-公开
标题翻译：用于等离子体处理的装置和等离子体处理方法
公开(公告)号：WO2008114958A1
公开(公告)日：2008-09-25
申请号：PCT/KR2008/001430
申请日：2008-03-13
申请人： SOSUL CO., LTD. , LEE, Kyung Ho , GUAHK, Jae Ho , CHOI, Jae Chul , HAN, Young Ki , LEE, Hee Se , LIM, Yong Hwan , RHA, Kwan Goo , CHUNG, Seng Hyun , JEON, Sun Q , LEE, Jung Hee
发明人： LEE, Kyung Ho , GUAHK, Jae Ho , CHOI, Jae Chul , HAN, Young Ki , LEE, Hee Se , LIM, Yong Hwan , RHA, Kwan Goo , CHUNG, Seng Hyun , JEON, Sun Q , LEE, Jung Hee
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/20 , H01L21/0209 , H01L21/68735 , H01L21/68742
摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
摘要翻译：提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装。

2. 发明申请

WO2009008659A2 PLASMA ETCHING APPARATUS AND METHOD OF ETCHING WAFER 审中-公开
标题翻译：等离子刻蚀装置和刻蚀晶片的方法
公开(公告)号：WO2009008659A2
公开(公告)日：2009-01-15
申请号：PCT/KR2008/004026
申请日：2008-07-09
申请人： SOSUL CO., LTD. , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Gil Hun , HAN, Young Ki
发明人： RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Gil Hun , HAN, Young Ki
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/67069 , H01L21/7684
摘要： Provided is a plasma etching equipment and a method of etching a wafer using the plasma etching equipment. The plasma etching equipment includes a chamber, a wafer support disposed in the chamber and configured to support a wafer and move the wafer vertically, a plasma generation unit configured to generate plasma in the chamber, an etch gas supply unit configured to supply an etch gas into the chamber, and a remote plasma generation unit configured to excite a post-process gas into a plasma state and supply it into the chamber.
摘要翻译：提供等离子体蚀刻设备和使用等离子体蚀刻设备蚀刻晶片的方法。等离子体蚀刻设备包括腔室，设置在腔室中并且被配置为支撑晶片并垂直移动晶片的晶片支撑件，配置成在腔室中产生等离子体的等离子体产生单元，配置成将蚀刻气体进入腔室，以及远程等离子体产生单元，该远程等离子体产生单元被配置成将后处理气体激发成等离子体状态并将其供应到腔室中。

3. 发明申请

WO2008120946A1 APPARATUS FOR SUPPORTING SUBSTRATE AND PLASMA ETCHING APPARATUS HAVING THE SAME 审中-公开
标题翻译：支持基板和等离子体蚀刻装置的装置
公开(公告)号：WO2008120946A1
公开(公告)日：2008-10-09
申请号：PCT/KR2008/001824
申请日：2008-04-01
申请人： SOSUL CO., LTD. , LEE, Won Haeng , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
发明人： LEE, Won Haeng , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
IPC分类号： H01L21/683
CPC分类号： H01L21/67069 , H01L21/6831 , H01L21/68742
摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
摘要翻译：提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极，边缘区域。提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。

4. 发明申请

WO2008136586A1 GAS SUPPLYING APPARATUS AND EQUIPMENT FOR ETCHING SUBSTRATE EDGE HAVING THE SAME 审中-公开
标题翻译：用于蚀刻具有相同基板边缘的气体供应装置和设备
公开(公告)号：WO2008136586A1
公开(公告)日：2008-11-13
申请号：PCT/KR2008/002352
申请日：2008-04-25
申请人： SOSUL CO., LTD. , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
发明人： RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Provided are a gas supplying apparatus and an equipment for etching a substrate edge having the same. The gas supplying apparatus for supplying a gas to a chamber having a reaction compartment includes: a gas spraying unit for spraying gas to the reaction compartment; a gas storage unit for storing the gas; first and second extension passages provided between the gas spraying unit and the gas storage unit; and a leakage preventing unit provided to a connection region of the first and second extension passages to prevent leakage of the gas. The passage through which a gas is provided to the reaction compartment of the chamber is positioned inside the lateral wall of the chamber to prevent damage thereof, and leakage of the gas resulting therefrom can be prevented. An exhaust unit capable of exhausting a toxic gas to the outside is provided on one side of a passage connection portion connecting the passages in case the toxic gas leaks and, therefore, leakage of the toxic gas can be prevented.
摘要翻译：提供一种用于蚀刻具有该气体供给装置的基板边缘的气体供给装置和设备。用于向具有反应室的室供给气体的气体供给装置包括：气体喷射单元，用于将气体喷射到反应室; 用于存储气体的气体存储单元; 设置在气体喷射单元和气体存储单元之间的第一和第二延伸通道; 以及设置在第一和第二延伸通道的连接区域以防止气体泄漏的防漏单元。将气体设置到室的反应室的通道位于室的侧壁的内侧，以防止其损坏，并且可以防止由其产生的气体的泄漏。在有毒气体泄漏的情况下，能够将有毒气体排出到外部的排气单元设置在连接通路的通路连接部的一侧，因此能够防止有毒气体的泄漏。

5. 发明申请

WO2012121528A2 MAGNETIC NANOCOMPOSITE SPECIFIC FOR THYROID CANCER AND USE THEREOF 审中-公开
标题翻译：用于甲状腺癌的磁性纳米复合体及其用途
公开(公告)号：WO2012121528A2
公开(公告)日：2012-09-13
申请号：PCT/KR2012/001617
申请日：2012-03-05
申请人： SAMSUNG LIFE PUBLIC WELFARE FOUNDATION , CHOE, Jun Ho , LEE, Jung Hee
发明人： CHOE, Jun Ho , LEE, Jung Hee
IPC分类号： A61K9/16 , A61K47/30 , A61K39/395 , A61K49/06
CPC分类号： A61K49/1875 , A61K9/0009 , A61K9/5146 , A61K41/0052 , A61K47/6851 , A61K47/6923 , A61K47/6929 , C07K16/2869 , C07K16/30
摘要： The present invention relates to a thyroid cancer-specific magnetic nanocomposite, and more particularly, to a magnetic nanocomposite, in which magnetic nanoparticles are encapsulated in a biocompatible polymer and a thyroid cancer-specific polypeptide is conjugated to the biocompatible polymer, a diagnostic composition for thyroid cancer comprising the magnetic nanocomposite, a therapeutic composition for thyroid cancer comprising the magnetic nanocomposite, a method for providing information for thyroid cancer diagnosis using the magnetic nanocomposite, and a therapeutic method thereof. The magnetic nanocomposite of the present invention is advantageous in that it can be used for diagnosis and treatment of thyroid cancer at the same time.
摘要翻译：本发明涉及一种甲状腺癌特异性磁性纳米复合材料，更具体地说，涉及一种磁性纳米复合物，其中磁性纳米粒子被包封在生物相容性聚合物中，并且甲状腺癌特异性多肽与生物相容性聚合物缀合，包含磁性纳米复合物的甲状腺癌，包含磁性纳米复合物的甲状腺癌治疗组合物，使用磁性纳米复合物提供甲状腺癌诊断信息的方法及其治疗方法。本发明的磁性纳米复合物的优点在于可以同时用于甲状腺癌的诊断和治疗。

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