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1. 发明申请

WO2009008659A3 PLASMA ETCHING APPARATUS AND METHOD OF ETCHING WAFER 审中-公开
标题翻译：等离子体蚀刻装置和蚀刻方法
公开(公告)号：WO2009008659A3
公开(公告)日：2009-03-12
申请号：PCT/KR2008004026
申请日：2008-07-09
申请人： SOSUL CO LTD , RHA KWAN GOO , LEE JUNG HEE , JANG CHUL HEE , LEE GIL HUN , HAN YOUNG KI
发明人： RHA KWAN GOO , LEE JUNG HEE , JANG CHUL HEE , LEE GIL HUN , HAN YOUNG KI
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/67069 , H01L21/7684
摘要： Provided is a plasma etching equipment and a method of etching a wafer using the plasma etching equipment. The plasma etching equipment includes a chamber, a wafer support disposed in the chamber and configured to support a wafer and move the wafer vertically, a plasma generation unit configured to generate plasma in the chamber, an etch gas supply unit configured to supply an etch gas into the chamber, and a remote plasma generation unit configured to excite a post-process gas into a plasma state and supply it into the chamber.
摘要翻译：提供了一种等离子体蚀刻设备和使用等离子体蚀刻设备来蚀刻晶片的方法。等离子体蚀刻设备包括腔室，设置在腔室中并被配置为支撑晶片并垂直移动晶片的晶片支撑件，配置成在腔室中产生等离子体的等离子体产生单元，蚀刻气体供应单元，其构造成提供蚀刻气体以及远程等离子体生成单元，其被配置为将后处理气体激发成等离子体状态并将其供应到所述室中。

2. 发明申请

WO2008120946A1 APPARATUS FOR SUPPORTING SUBSTRATE AND PLASMA ETCHING APPARATUS HAVING THE SAME 审中-公开
标题翻译：支持基板和等离子体蚀刻装置的装置
公开(公告)号：WO2008120946A1
公开(公告)日：2008-10-09
申请号：PCT/KR2008/001824
申请日：2008-04-01
申请人： SOSUL CO., LTD. , LEE, Won Haeng , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
发明人： LEE, Won Haeng , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
IPC分类号： H01L21/683
CPC分类号： H01L21/67069 , H01L21/6831 , H01L21/68742
摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
摘要翻译：提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极，边缘区域。提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。

3. 发明申请

WO2008114958A1 APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING 审中-公开
标题翻译：用于等离子体处理的装置和等离子体处理方法
公开(公告)号：WO2008114958A1
公开(公告)日：2008-09-25
申请号：PCT/KR2008/001430
申请日：2008-03-13
申请人： SOSUL CO., LTD. , LEE, Kyung Ho , GUAHK, Jae Ho , CHOI, Jae Chul , HAN, Young Ki , LEE, Hee Se , LIM, Yong Hwan , RHA, Kwan Goo , CHUNG, Seng Hyun , JEON, Sun Q , LEE, Jung Hee
发明人： LEE, Kyung Ho , GUAHK, Jae Ho , CHOI, Jae Chul , HAN, Young Ki , LEE, Hee Se , LIM, Yong Hwan , RHA, Kwan Goo , CHUNG, Seng Hyun , JEON, Sun Q , LEE, Jung Hee
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/20 , H01L21/0209 , H01L21/68735 , H01L21/68742
摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
摘要翻译：提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装。

4. 发明申请

WO2012053802A3 METHOD FOR FORMING A NANOGAP PATTERN, BIOSENSOR HAVING A NANOGAP PATTERN, AND METHOD FOR MANUFACTURING THE BIOSENSOR 审中-公开
标题翻译：用于形成纳米图案的方法，具有纳米图案的生物传感器以及用于制造生物传感器的方法
公开(公告)号：WO2012053802A3
公开(公告)日：2012-07-26
申请号：PCT/KR2011007746
申请日：2011-10-18
申请人： MICOBIOMED CO LTD , RHA KWAN GOO
发明人： RHA KWAN GOO
IPC分类号： G01N27/327 , G01N27/26
CPC分类号： H01L21/30604 , G01N27/4146 , H01L29/66409
摘要： According to a method for forming a nanogap pattern for a biosensor, an oxide film is firstly formed on a substrate, and a first nitride film is formed on the oxide film. The first nitride film is partially etched to form a first nitride film pattern which exposes the oxide film and which has a first gap that becomes narrower from the top to the bottom thereof. A second nitride film is formed along the first nitride film pattern and along a sidewall and a bottom surface of the first gap. The second nitride film is etched to form a second nitride film pattern on the sidewall of the first gap, wherein the second nitride film pattern has a second gap, the width of which is smaller than that of the first gap. The oxide film is etched using the second nitride film pattern as an etching mask to form an oxide film pattern having a third gap, thereby completing the formation of the nanogap pattern.
摘要翻译：根据用于形成生物传感器的纳米图案的方法，首先在基板上形成氧化膜，在氧化物膜上形成第一氮化物膜。第一氮化物膜被部分蚀刻以形成暴露氧化膜的第一氮化物膜图案，并且具有从顶部到底部变窄的第一间隙。沿着第一氮化物膜图案并沿着第一间隙的侧壁和底表面形成第二氮化物膜。蚀刻第二氮化物膜以在第一间隙的侧壁上形成第二氮化物膜图案，其中第二氮化物膜图案具有第二间隙，其宽度小于第一间隙的宽度。使用第二氮化物膜图案作为蚀刻掩模蚀刻氧化膜，以形成具有第三间隙的氧化膜图案，从而完成纳米图案的形成。

5. 发明申请

WO2009008659A2 PLASMA ETCHING APPARATUS AND METHOD OF ETCHING WAFER 审中-公开
标题翻译：等离子刻蚀装置和刻蚀晶片的方法
公开(公告)号：WO2009008659A2
公开(公告)日：2009-01-15
申请号：PCT/KR2008/004026
申请日：2008-07-09
申请人： SOSUL CO., LTD. , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Gil Hun , HAN, Young Ki
发明人： RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Gil Hun , HAN, Young Ki
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/67069 , H01L21/7684
摘要： Provided is a plasma etching equipment and a method of etching a wafer using the plasma etching equipment. The plasma etching equipment includes a chamber, a wafer support disposed in the chamber and configured to support a wafer and move the wafer vertically, a plasma generation unit configured to generate plasma in the chamber, an etch gas supply unit configured to supply an etch gas into the chamber, and a remote plasma generation unit configured to excite a post-process gas into a plasma state and supply it into the chamber.
摘要翻译：提供等离子体蚀刻设备和使用等离子体蚀刻设备蚀刻晶片的方法。等离子体蚀刻设备包括腔室，设置在腔室中并且被配置为支撑晶片并垂直移动晶片的晶片支撑件，配置成在腔室中产生等离子体的等离子体产生单元，配置成将蚀刻气体进入腔室，以及远程等离子体产生单元，该远程等离子体产生单元被配置成将后处理气体激发成等离子体状态并将其供应到腔室中。

6. 发明申请

WO2008108604A1 APPARATUS AND METHOD OF PROCESSING SUBSTRATES 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：WO2008108604A1
公开(公告)日：2008-09-12
申请号：PCT/KR2008/001326
申请日：2008-03-07
申请人： SOSUL CO., LTD. , KOMICO LTD. , KIM, Geun-Ho , LEE, Jung-Hee , JEON, Seon-Kyu , LEE, Hee-Se , RHA, Kwan-Goo , CHUNG, Seng-Hyun
发明人： KIM, Geun-Ho , LEE, Jung-Hee , JEON, Seon-Kyu , LEE, Hee-Se , RHA, Kwan-Goo , CHUNG, Seng-Hyun
IPC分类号： H01L21/205 , H01L21/68
CPC分类号： H01L21/67069 , H01L21/67213
摘要： In an apparatus for treating substrates, a primary process chamber, a peripheral etching chamber and a rear etching chamber are arranged around a transfer chamber, and a primary process, a peripheral etching process and a rear etching process are performed under a vacuum state in a single system. The peripheral and the rear etching processes are performed in the same space without atmospheric exposure of the substrate. Accordingly, the process time of the primary process, the peripheral and the rear etching processes may be remarkably reduced, to thereby improve the manufacturing efficiency of a semiconductor device.
摘要翻译：在处理基板的装置中，在处理室周围配置有一次处理室，周边蚀刻室和后蚀刻室，在真空状态下进行一次处理，周边蚀刻处理和后蚀刻处理单系统。外围和后蚀刻工艺在相同的空间中进行，而不会大量暴露于基板。因此，可以显着降低初级工艺，外围和后蚀刻工艺的处理时间，从而提高半导体器件的制造效率。

7. 发明申请

WO2008136586A1 GAS SUPPLYING APPARATUS AND EQUIPMENT FOR ETCHING SUBSTRATE EDGE HAVING THE SAME 审中-公开
标题翻译：用于蚀刻具有相同基板边缘的气体供应装置和设备
公开(公告)号：WO2008136586A1
公开(公告)日：2008-11-13
申请号：PCT/KR2008/002352
申请日：2008-04-25
申请人： SOSUL CO., LTD. , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
发明人： RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Hyang Joo , KIM, Dong Wan
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Provided are a gas supplying apparatus and an equipment for etching a substrate edge having the same. The gas supplying apparatus for supplying a gas to a chamber having a reaction compartment includes: a gas spraying unit for spraying gas to the reaction compartment; a gas storage unit for storing the gas; first and second extension passages provided between the gas spraying unit and the gas storage unit; and a leakage preventing unit provided to a connection region of the first and second extension passages to prevent leakage of the gas. The passage through which a gas is provided to the reaction compartment of the chamber is positioned inside the lateral wall of the chamber to prevent damage thereof, and leakage of the gas resulting therefrom can be prevented. An exhaust unit capable of exhausting a toxic gas to the outside is provided on one side of a passage connection portion connecting the passages in case the toxic gas leaks and, therefore, leakage of the toxic gas can be prevented.
摘要翻译：提供一种用于蚀刻具有该气体供给装置的基板边缘的气体供给装置和设备。用于向具有反应室的室供给气体的气体供给装置包括：气体喷射单元，用于将气体喷射到反应室; 用于存储气体的气体存储单元; 设置在气体喷射单元和气体存储单元之间的第一和第二延伸通道; 以及设置在第一和第二延伸通道的连接区域以防止气体泄漏的防漏单元。将气体设置到室的反应室的通道位于室的侧壁的内侧，以防止其损坏，并且可以防止由其产生的气体的泄漏。在有毒气体泄漏的情况下，能够将有毒气体排出到外部的排气单元设置在连接通路的通路连接部的一侧，因此能够防止有毒气体的泄漏。

8. 发明申请

WO2008096981A1 APPARATUS FOR FORMING A LAYER 审中-公开
标题翻译：用于形成层的装置
公开(公告)号：WO2008096981A1
公开(公告)日：2008-08-14
申请号：PCT/KR2008/000599
申请日：2008-01-31
申请人： SOSUL CO., LTD. , KOMICO LTD. , LEE, Hee-Se , KIM, Geun-Ho , PARK, Seung-Il , LEE, Kwang-Hee , YUN, Soo-Won , RHA, Kwan-Goo
发明人： LEE, Hee-Se , KIM, Geun-Ho , PARK, Seung-Il , LEE, Kwang-Hee , YUN, Soo-Won , RHA, Kwan-Goo
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4412 , C23C16/45557 , C23C16/45589 , C23C16/46 , H01L21/67017
摘要： An apparatus for forming a layer includes a chamber, a partition member, a supporting member, a reaction gas-providing member and an insulation member. The chamber has an inner space into which a substrate is loaded. The partition member is arranged in the inner space of the chamber to partition the inner space into a reaction region for receiving the substrate and a non-reaction region. The supporting member is placed in the reaction region to support the substrate. The reaction gas-providing member is positioned over the supporting member to provide a reaction gas to the reaction region. The insulation member is detachably combined with the partition member to isolate the reaction region and the non-reaction region from each other. Thus, heat loss from a heater in the supporting member through the non-reaction region via the partition member may be suppressed.
摘要翻译：用于形成层的装置包括室，分隔构件，支撑构件，反应气体供给构件和绝缘构件。腔室具有内部空间，衬底被加载到该内部空间中。分隔构件布置在室的内部空间中，以将内部空间分隔成用于接收基板和非反应区域的反应区域。将支撑构件放置在反应区域中以支撑基板。反应气体供给构件位于支撑构件上方，以向反应区域提供反应气体。绝缘构件与分隔构件可拆卸地组合以将反应区域和非反应区域彼此隔离。因此，可以抑制从支撑构件中的加热器经由分隔构件通过非反应区域的热损失。

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