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1. 发明申请

WO2009125951A2 PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：WO2009125951A2
公开(公告)日：2009-10-15
申请号：PCT/KR2009/001749
申请日：2009-04-06
申请人： SOSUL CO., LTD. , KIM, Hyoung Won , SEO, Young Soo , YOON, Chi Kug , LEE, Jun Hyeok , HAN, Young Ki , CHOI, Jae Chul
发明人： KIM, Hyoung Won , SEO, Young Soo , YOON, Chi Kug , LEE, Jun Hyeok , HAN, Young Ki , CHOI, Jae Chul
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： H01J37/32568 , H01J37/32009 , H01J2237/334 , H01L21/67069 , H01L21/67751 , H01L21/68742
摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
摘要翻译：提供了一种等离子体处理设备和方法。等离子体处理装置包括腔室，上电极，下电极，基板支撑件和移动构件。上电极设置在室的内部上部。下电极在室的内下部面向上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。基板支撑件设置在上电极与下电极之间以支撑基板，使得基板的底表面的中心区域在基板背面蚀刻工艺中暴露。移动构件被配置为在衬底背面蚀刻工艺中移动衬底支撑件以将衬底与衬底支撑件分离。

2. 发明申请

WO2009091189A2 SUBSTRATE HOLDER, SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD USING THE SAME 审中-公开
标题翻译：基板保持器，基板支撑装置，基板处理装置和使用该基板的基板处理方法
公开(公告)号：WO2009091189A2
公开(公告)日：2009-07-23
申请号：PCT/KR2009/000211
申请日：2009-01-15
申请人： SOSUL CO., LTD. , HAN, Young Ki , SEO, Young Soo , KIM, Hyoung Won , YOON, Chi Kug , LEE, Sang Hoon
发明人： HAN, Young Ki , SEO, Young Soo , KIM, Hyoung Won , YOON, Chi Kug , LEE, Sang Hoon
IPC分类号： H01L21/683 , H01L21/68 , H01L21/30
CPC分类号： H01J37/32715 , H01J37/3244 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J2237/3343 , H01L21/67069 , H01L21/68721 , H01L21/68728 , H01L21/68785
摘要： Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.
摘要翻译：提供了基板保持器，基板支撑装置，基板处理装置和基板处理方法。特别地，提供了适于提高基板背面的工艺效率和蚀刻均匀性的基板保持器，基板支撑装置，基板处理装置和基板处理方法。

3. 发明申请

WO2008114958A1 APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING 审中-公开
标题翻译：用于等离子体处理的装置和等离子体处理方法
公开(公告)号：WO2008114958A1
公开(公告)日：2008-09-25
申请号：PCT/KR2008/001430
申请日：2008-03-13
申请人： SOSUL CO., LTD. , LEE, Kyung Ho , GUAHK, Jae Ho , CHOI, Jae Chul , HAN, Young Ki , LEE, Hee Se , LIM, Yong Hwan , RHA, Kwan Goo , CHUNG, Seng Hyun , JEON, Sun Q , LEE, Jung Hee
发明人： LEE, Kyung Ho , GUAHK, Jae Ho , CHOI, Jae Chul , HAN, Young Ki , LEE, Hee Se , LIM, Yong Hwan , RHA, Kwan Goo , CHUNG, Seng Hyun , JEON, Sun Q , LEE, Jung Hee
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/20 , H01L21/0209 , H01L21/68735 , H01L21/68742
摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
摘要翻译：提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装。

4. 发明申请

WO2009054696A1 BAFFLE, SUBSTRATE SUPPORTING APPARATUS AND PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：基板支撑装置和等离子体处理装置和等离子体处理方法
公开(公告)号：WO2009054696A1
公开(公告)日：2009-04-30
申请号：PCT/KR2008/006296
申请日：2008-10-24
申请人： SOSUL CO., LTD. , SEO, Young Soo , GUAHK, Jae Ho , JANG, Chul Hee , HAN, Young Ki
发明人： SEO, Young Soo , GUAHK, Jae Ho , JANG, Chul Hee , HAN, Young Ki
IPC分类号： H01L21/306
CPC分类号： H01J37/32633 , H01J37/32623
摘要： A plasma processing apparatus includes a chamber, a shielding member provided at an inner- upper portion of the chamber, a substrate supporting unit disposed under the shielding member and supporting a substrate, an electrode injecting reacting gas to an undersurface of the substrate, and a baffle discharging the reaction gas at a location identical to or higher than a horizontal plane of the substrate seating on the supporting unit. Since the gas discharge is realized at the location identical to or higher than the horizontal plane of the substrate, it becomes possible to make a residence time of the reaction gas at the central portion and edge of the undersurface of the substrate uniform. In addition, a plasma processing apparatus includes a chamber, a shielding member provided in the chamber, a first high frequency generator disposed opposing the shielding member and configured to generate plasma in the chamber, antennas arranged near an outer circumference of a sidewall of the chamber at a predetermined distance, a second high frequency generator including a high frequency power source connected to the antennas, and a substrate supporting unit supporting a substrate between the shielding member and the first high frequency generator. A second high frequency signal is applied after a first high frequency is applied from the first high frequency generator. Therefore, leakage of reaction gas and plasma located under the substrate can be prevented, and thus the etching rate and uniformity of the bottom side of the substrate can be improved.
摘要翻译：一种等离子体处理装置，包括：室，设置在所述室的内部上部的屏蔽部件，设置在所述屏蔽部件的下方并支撑基板的基板支撑部，向所述基板的下表面喷射反应气体的电极，挡板将反应气体排放在与支撑单元上的基板的水平面相同或更高的位置处。由于在与基板的水平面相同或更高的位置实现气体放电，因此可以使反应气体在基板的下表面的边缘和边缘的停留时间均匀。此外，等离子体处理装置包括：腔室，设置在腔室中的屏蔽构件;第一高频发生器，其布置成与屏蔽构件相对设置，并且被配置为在腔室中产生等离子体;天线布置在室的侧壁的外周附近在预定距离处，包括连接到所述天线的高频电源的第二高频发生器和在所述屏蔽构件和所述第一高频发生器之间支撑衬底的衬底支撑单元。在从第一高频发生器施加第一高频之后施加第二高频信号。因此，可以防止位于基板下方的反应气体和等离子体的泄漏，从而可以提高基板的底面的蚀刻速度和均匀性。

5. 发明申请

WO2009084823A1 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：WO2009084823A1
公开(公告)日：2009-07-09
申请号：PCT/KR2008/007291
申请日：2008-12-10
申请人： SOSUL CO., LTD. , HAN, Young Ki , SEO, Young Soo
发明人： HAN, Young Ki , SEO, Young Soo
IPC分类号： H01L21/205
CPC分类号： H01J37/20 , H01J37/3244 , H01J37/32449 , H01J2237/2002 , H01J2237/20235
摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.
摘要翻译：提供了一种用于处理基板的装置和方法。通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。

6. 发明申请

WO2009008659A2 PLASMA ETCHING APPARATUS AND METHOD OF ETCHING WAFER 审中-公开
标题翻译：等离子刻蚀装置和刻蚀晶片的方法
公开(公告)号：WO2009008659A2
公开(公告)日：2009-01-15
申请号：PCT/KR2008/004026
申请日：2008-07-09
申请人： SOSUL CO., LTD. , RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Gil Hun , HAN, Young Ki
发明人： RHA, Kwan Goo , LEE, Jung Hee , JANG, Chul Hee , LEE, Gil Hun , HAN, Young Ki
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/67069 , H01L21/7684
摘要： Provided is a plasma etching equipment and a method of etching a wafer using the plasma etching equipment. The plasma etching equipment includes a chamber, a wafer support disposed in the chamber and configured to support a wafer and move the wafer vertically, a plasma generation unit configured to generate plasma in the chamber, an etch gas supply unit configured to supply an etch gas into the chamber, and a remote plasma generation unit configured to excite a post-process gas into a plasma state and supply it into the chamber.
摘要翻译：提供等离子体蚀刻设备和使用等离子体蚀刻设备蚀刻晶片的方法。等离子体蚀刻设备包括腔室，设置在腔室中并且被配置为支撑晶片并垂直移动晶片的晶片支撑件，配置成在腔室中产生等离子体的等离子体产生单元，配置成将蚀刻气体进入腔室，以及远程等离子体产生单元，该远程等离子体产生单元被配置成将后处理气体激发成等离子体状态并将其供应到腔室中。

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