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1. 发明申请

WO2011156657A2 HIGH PRODUCTIVITY THIN FILM DEPOSITION METHOD AND SYSTEM 审中-公开
标题翻译：高生产率薄膜沉积方法和系统
公开(公告)号：WO2011156657A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/039877
申请日：2011-06-09
申请人： SOLEXEL, INC. , KRAMER, Karl, Josef , ASHJAEE, Jay , MOSLEHI, Mehrdad, M. , KAMIAN, George, D. , MORDO, David , YONEHARA, Takao
发明人： KRAMER, Karl, Josef , ASHJAEE, Jay , MOSLEHI, Mehrdad, M. , KAMIAN, George, D. , MORDO, David , YONEHARA, Takao
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
摘要翻译：提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

2. 发明申请

WO2013126033A2 APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 审中-公开
标题翻译：在衬底上均匀形成多孔半导体的装置和方法
公开(公告)号：WO2013126033A2
公开(公告)日：2013-08-29
申请号：PCT/US2011/059177
申请日：2011-11-03
申请人： SOLEXEL, INC. , KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , TAMILMANI, Subramanian , KAMIAN, George , ASHJAEE, Jay , YONEHARA, Takao
发明人： KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , TAMILMANI, Subramanian , KAMIAN, George , ASHJAEE, Jay , YONEHARA, Takao
IPC分类号： H01L21/3063 , H01L21/306 , H01L21/02
CPC分类号： B81C99/0025 , B81C2201/0115 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L21/306 , H01L31/0284 , H01L31/18
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得均匀多孔半导体层（由单层或多层多孔半导体，例如包含单孔或多孔层的多孔硅制成）的高生产率受控制造成为可能。一些应用包括用于管芯分离和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅（使用具有最佳孔隙率及其随后的氧化的多孔硅形成）的MEMS分离和牺牲层的制造。此外，本公开适用于光伏，MEMS的一般领域，包括传感器和致动器，独立或与集成半导体微电子学，半导体微电子芯片和光电子集成。

3. 发明申请

WO2011100647A3 DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 审中-公开
公开(公告)号：WO2011100647A3
公开(公告)日：2011-08-18
申请号：PCT/US2011/024670
申请日：2011-02-12
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KRAMER, Karl-josef , WANG, David, Xuan-qi , KAPUR, Pawan , NAG, Somnath , KAMIAN, George , ASHJAEE, Jay , YONEHARA, Takao
发明人： MOSLEHI, Mehrdad, M. , KRAMER, Karl-josef , WANG, David, Xuan-qi , KAPUR, Pawan , NAG, Somnath , KAMIAN, George , ASHJAEE, Jay , YONEHARA, Takao
IPC分类号： H01L31/042 , H01L31/18 , H01L21/306 , H01L21/20
摘要： This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

4. 发明申请

WO2012040688A2 HIGH-THROUGHPUT BATCH POROUS SILICON MANUFACTURING EQUIPMENT DESIGN AND PROCESSING METHODS 审中-公开
标题翻译：高通量批量多孔硅制造设备设计与加工方法
公开(公告)号：WO2012040688A2
公开(公告)日：2012-03-29
申请号：PCT/US2011/053183
申请日：2011-09-24
申请人： SOLEXEL, INC. , YONEHARA, Takao , TAMILMANI, Subramanian , KRAMER, Karl-josef , ASHJAEE, Jay , MOSLEHI, Mehrdad, M. , MIYAJI, Yasuhiro , HAYASHI, Tokuyuki , INAHARA, Takamitsu
发明人： YONEHARA, Takao , TAMILMANI, Subramanian , KRAMER, Karl-josef , ASHJAEE, Jay , MOSLEHI, Mehrdad, M. , MIYAJI, Yasuhiro , HAYASHI, Tokuyuki , INAHARA, Takamitsu
IPC分类号： H01L21/306
CPC分类号： C25F3/12 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F7/00
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

5. 发明申请

WO2010129719A1 HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：高效多孔半导体制造设备
公开(公告)号：WO2010129719A1
公开(公告)日：2010-11-11
申请号：PCT/US2010/033792
申请日：2010-05-05
申请人： SOLEXEL, INC. , KAMIAN, George , NAG, Somnath , TAMILMANI, Subbu , MOSLEHI, Mehrdad, M. , KRAMER, Karl-Josef , YONEHARA, Takao
发明人： KAMIAN, George , NAG, Somnath , TAMILMANI, Subbu , MOSLEHI, Mehrdad, M. , KRAMER, Karl-Josef , YONEHARA, Takao
IPC分类号： H01L31/00 , H01L31/09
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer / multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi- junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体孔隙度多孔半导体如多孔硅），用于抗反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如通过形成可变带隙晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。此外，本公开适用于光伏，MEMS（包括传感器和致动器）的独立的一体或集成半导体微电子学，半导体微电子芯片和光电子学的一般领域。

6. 发明申请

WO2006004135A1 EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：曝光装置和装置制造方法
公开(公告)号：WO2006004135A1
公开(公告)日：2006-01-12
申请号：PCT/JP2005/012433
申请日：2005-06-29
申请人： CANON KABUSHIKI KAISHA , SUGITA, Mitsuro , YONEHARA, Takao , TERASHI, Takaaki , TSUJI, Toshihiko
发明人： SUGITA, Mitsuro , YONEHARA, Takao , TERASHI, Takaaki , TSUJI, Toshihiko
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70116 , G03F7/7005
摘要： This invention relates to an exposure apparatus which transfers a pattern of a mask onto a wafer. The exposure apparatus includes a master stage which holds the mask, and a light source which generates light to illuminate the mask. The light source includes a solid state device which emits light by spontaneous emission.
摘要翻译：本发明涉及将掩模图案转印到晶片上的曝光装置。曝光装置包括保持掩模的主台和产生用于照亮掩模的光的光源。光源包括通过自发发射发光的固态器件。

7. 发明申请

WO2005045492A2 METHOD FOR FABRICATION OF OPTICAL ELEMENT, AND OPTICAL ELEMENT HAVING THREE-DIMENSIONAL LAMINATED STRUCTURE 审中-公开
标题翻译：光学元件的制造方法和具有三维层压结构的光学元件
公开(公告)号：WO2005045492A2
公开(公告)日：2005-05-19
申请号：PCT/JP2004/016901
申请日：2004-11-08
申请人： CANON KABUSHIKI KAISHA , SUGITA, Mitsuro , YONEHARA, Takao
发明人： SUGITA, Mitsuro , YONEHARA, Takao
IPC分类号： G02B6/12
CPC分类号： B82Y20/00 , G02B6/12 , G02B6/12002 , G02B6/1225 , G02B6/13 , G02B6/136 , G02B6/14
摘要： A method for production of an optical element includes a preparation step of preparing a first member having formed on the surface of a first substrate 101 a first layer 103 having at least one of natures of epitaxial growth and pores-making (micropores-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer having at least one of natures of epitaxial growth and pores-making (micropores-making), a formation step of bonding the first layer 103 of the first member and the second layer of the second member together, then performing layer separation in the porous layer for layer separation in the second member, and separating the second substrate 104 and the second layer of the second member from each other to form a laminated structure on the first substrate 101, and a pattern forming step of forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.
摘要翻译：光学元件的制造方法包括：准备第一部件的准备工序，所述第一部件在第一基板101的表面上形成有具有外延生长性质和制孔（微孔）的至少一种的第一层103和具有用于层间分离的多孔层的第二构件形成在第二衬底104上并且在其上形成具有外延生长和制孔（微孔制造）的性质中的至少一种的第二层，形成步骤，将第一层 103的第一部件和第二部件的第二层在一起，然后在用于第二部件中的层分离的多孔层中进行层分离，并且将第二基板104和第二部件的第二层彼此分离以形成第一基板101上的层叠结构，以及形成折射率分布图案的图案形成步骤，该折射率分布图案由第一层103和第二层中的至少一个。

8. 发明申请

WO2010116694A2 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2010116694A2
公开(公告)日：2010-10-14
申请号：PCT/JP2010/002426
申请日：2010-04-02
申请人： CANON KABUSHIKI KAISHA , SAKAGUCHI, Kiyofumi , YONEHARA, Takao , KAWASE, Nobuo , NAKAGAWA, Kenji
发明人： SAKAGUCHI, Kiyofumi , YONEHARA, Takao , KAWASE, Nobuo , NAKAGAWA, Kenji
IPC分类号： H01L21/98
CPC分类号： H01L25/0657 , H01L21/563 , H01L21/6835 , H01L21/78 , H01L24/12 , H01L24/16 , H01L24/90 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2221/68318 , H01L2221/68363 , H01L2221/68377 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/32145 , H01L2224/73203 , H01L2224/90 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.
摘要翻译：一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

9. 发明申请

WO2008053907A1 LED ARRAY MANUFACTURING METHOD, LED ARRAY AND LED PRINTER 审中-公开
标题翻译： LED阵列制造方法，LED阵列和LED打印机
公开(公告)号：WO2008053907A1
公开(公告)日：2008-05-08
申请号：PCT/JP2007/071171
申请日：2007-10-24
申请人： CANON KABUSHIKI KAISHA , YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , YONEHARA, Takao , NISHI, Kojiro
发明人： YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , YONEHARA, Takao , NISHI, Kojiro
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01L2924/00
摘要： An LED array having no insulating film between the LED structure and the reflector thereof is manufactured by forming a luminescent layer 1102 and a DBR layer 1103 on a first substrate 100 with an insulating layer 1101 interposed between them, patterning the DBR layer and the luminescent layer to make them show an islands-like profile, bonding the DBR layer and a second substrate 110 with an insulating layer 1111 interposed between them, and separating the first substrate and the luminescent layer from each other.
摘要翻译：在LED结构及其反射体之间不具有绝缘膜的LED阵列通过在第一基板100上形成发光层1102和DBR层1103，其间插入有绝缘层1101来形成DBR层和发光层为了使其呈现岛状轮廓，将DBR层和第二基板110与介于它们之间的绝缘层1111接合，并且将第一基板和发光层彼此分离。

10. 发明申请

WO2008050901A1 SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件，半导体器件制造方法和使用制造方法的LED阵列
公开(公告)号：WO2008050901A1
公开(公告)日：2008-05-02
申请号：PCT/JP2007/071267
申请日：2007-10-25
申请人： CANON KABUSHIKI KAISHA , YONEHARA, Takao , YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , NISHI, Kojiro
发明人： YONEHARA, Takao , YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , NISHI, Kojiro
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L21/7806 , H01L21/784 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
摘要翻译：提供了一种新颖的半导体制品制造方法等。制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025）半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

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