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    • 4. 发明申请
    • GAAS POWER TRANSISTOR
    • WO2007106428A3
    • 2007-09-20
    • PCT/US2007/006186
    • 2007-03-09
    • SKYWORKS SOLUTIONS, INC.ZAMPARDI, Peter, J.SUN, Mike
    • ZAMPARDI, Peter, J.SUN, Mike
    • H01L29/76H01L29/66
    • A GaAs power transistor unit cell is provided with one of its transistor contacts on its bottom surface, and its other two transistor contacts on its frontside surface. In one arrangement, the GaAs power transistor unit cell has a N+ GaAs substrate that cooperates with an N- GaAs material to form a transistor collector. A collector contact is on a bottom surface of the collector, and a transistor base is provided on the collector. An emitter is arranged on the base. Accordingly, the collector contact is on the bottom of the unit cell, while a base contact and emitter contact are oriented to the frontside of the unit cell. It will be understood that the emitter and collector portions may be exchanged in other constructions. In use, the GaAs transistor unit cells are interconnected to form a GaAs power transistor, with the power transistor having externally available contacts. In one specific construction, a connection pad is provided on a laminate substrate. The GaAs power transistor is adhered and secured to the contact pad. using the bottom contact, enabling a GaAs power amplifier to be easily integrated onto the laminate substrate and connected with other circuitry.