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1. 发明申请

WO2012053782A3 PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND DEVICE FOR THE SAME 审中-公开
标题翻译：生长碳化硅单晶的方法及其装置
公开(公告)号：WO2012053782A3
公开(公告)日：2012-07-19
申请号：PCT/KR2011007701
申请日：2011-10-17
申请人： SK INNOVATION CO LTD , HONG SUNG WAN , KIM YOUNG SHOL
发明人： HONG SUNG WAN , KIM YOUNG SHOL
IPC分类号： C30B29/36 , C30B19/10 , H01L21/208
CPC分类号： C30B15/002 , C30B11/001 , C30B15/02 , C30B17/00 , C30B19/02 , C30B29/36 , H01L21/02529 , H01L21/02628 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si-C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process.
摘要翻译：本发明提供一种使用溶液法制造碳化硅单晶的方法，该方法包括：使用于生长碳化硅的籽晶衬底与包含至少一种添加金属的Si-C合金溶液接触，并在该籽晶上生长该碳化硅单晶包括在反应进行时当Si和添加金属的摩尔比低于初始设定值时将硅原料供给到合金溶液中。当使用溶液生长工艺制造碳化硅单晶时，该方法增加晶体生长速度，保持生长速度，并且防止生长不希望地停止。

2. 发明申请

WO2013002539A3 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生长碳化硅单晶的装置和方法
公开(公告)号：WO2013002539A3
公开(公告)日：2013-03-14
申请号：PCT/KR2012005045
申请日：2012-06-26
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
发明人： KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
IPC分类号： C30B29/36 , C30B11/00 , C30B23/00
CPC分类号： C30B9/06 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with at least one protrusion jaws, at least some or all of which are formed along an inner peripheral surface of the crucible, wherein the protrusion jaw is made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的设备和方法。用于生长碳化硅单晶的设备包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括填充在其中的硅（Si）或碳化硅（SiC）粉末或其混合物，包括设置在其内侧上部的碳化硅籽晶并生长碳化硅，以及从碳化硅种子延伸并由石墨材料制成的种子连接棒; 和加热坩埚的加热元件。坩埚的内部设置有至少一个突起颚，其中至少一些或全部沿坩埚的内周表面形成，其中突起颚由石墨材料制成。

3. 发明申请

WO2013002540A3 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生长碳化硅单晶的装置和方法
公开(公告)号：WO2013002540A3
公开(公告)日：2013-04-11
申请号：PCT/KR2012005048
申请日：2012-06-26
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
发明人： KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
IPC分类号： C30B15/00 , C30B15/10 , C30B29/36 , H01L33/00
CPC分类号： C30B15/02 , C30B17/00 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的设备和方法。用于生长碳化硅单晶的设备包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括填充在其中的硅（Si）或碳化硅（SiC）粉末或其混合物，包括设置在其内侧上部的碳化硅籽晶并生长碳化硅，以及从碳化硅种子延伸并由石墨材料制成的种子连接棒; 和加热坩埚的加热元件。坩埚的内部设置有圆柱形辅助工具，该辅助工具在其至少一侧形成有多个由石墨材料制成的孔。

4. 发明申请

WO2011043582A2 BURNER AND AFTERTREATING DEVICE OF EXHASUT GAS 审中-公开
标题翻译：燃烧器和排气的后处理装置
公开(公告)号：WO2011043582A2
公开(公告)日：2011-04-14
申请号：PCT/KR2010006815
申请日：2010-10-06
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , LEE WOO JIN , PARK HAE JIN , JUNG HONG SEOK , KIM YUN SIK
发明人： KIM YOUNG SHOL , LEE WOO JIN , PARK HAE JIN , JUNG HONG SEOK , KIM YUN SIK
IPC分类号： F01N3/00 , F01N3/025 , F01N3/24 , F01N3/38
CPC分类号： F01N3/36 , F01N3/035 , F01N3/38 , F01N2240/14
摘要： Provided are a burner and an aftertreating device of exhaust gas, which employs a simple construction using the flame protection tube, thereby increasing stability in forming the flame without the loss of back pressure and also uniformly heating the exhaust gas.
摘要翻译：本发明提供一种废气的燃烧器和后处理装置，其采用使用阻燃管的简单结构，从而提高形成火焰时的稳定性而不会损失背压并且也均匀地加热废气。

5. 发明申请

WO2014092493A2 SODIUM SECONDARY BATTERY 审中-公开
标题翻译：钠二次电池
公开(公告)号：WO2014092493A2
公开(公告)日：2014-06-19
申请号：PCT/KR2013011568
申请日：2013-12-13
申请人： SK INNOVATION CO LTD
发明人： CHAE JE HYUN , KIM JEONG SOO , KOH WON SANG , LEE SEUNG OK , KIM YOUNG SHOL
CPC分类号： H01M4/62 , H01M10/054
摘要： A sodium secondary battery according to the present invention comprises: an anode containing sodium; a cathode impregnated with a cathode solution including a plating additive which is at least one selected from a suppressor, a leveler, and an accelerator; and a sodium ion conductive solid electrolyte separating the anode and the cathode.
摘要翻译：根据本发明的钠二次电池包括：含有钠的阳极; 浸渍有阴极溶液的阴极，所述阴极溶液包括选自抑制剂，矫味剂和促进剂中的至少一种的电镀添加剂; 以及分离阳极和阴极的钠离子导电固体电解质。

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