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    • 1. 发明申请
    • PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 硝基半导体发光装置的生产方法
    • WO2007032546A1
    • 2007-03-22
    • PCT/JP2006/318658
    • 2006-09-14
    • SHOWA DENKO K.K.OSAWA, HiroshiHODOTA, Takashi
    • OSAWA, HiroshiHODOTA, Takashi
    • H01L33/00
    • H01L33/0079H01L33/007
    • The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.
    • 本发明提供了一种氮化物半导体发光器件的制造方法,其在去除衬底之后变得较小,并且可以从侧面发光; 具体而言,本发明提供了一种氮化物半导体发光器件的制造方法,其特征在于,具有以下顺序,在基板上依次层叠至少n型半导体层,发光层和p型半导体层来形成堆叠层 ; 形成凹槽,其分隔堆叠层以对应于待生产的氮化物半导体发光器件; 用牺牲层填充凹槽; 以及通过电镀在p型半导体层和牺牲层上形成平板层。
    • 3. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION THEREOF
    • 氮化物半导体发光器件及其生产
    • WO2007032421A1
    • 2007-03-22
    • PCT/JP2006/318231
    • 2006-09-07
    • SHOWA DENKO K.K.OSAWA, HiroshiHODOTA, Takashi
    • OSAWA, HiroshiHODOTA, Takashi
    • H01L33/00
    • H01L33/0079H01L33/32H01L33/40
    • The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.
    • 本发明提供了一种氮化物半导体发光器件,其包括具有高粘合力的正极和负极,可输出高功率,不产生热量; 具体而言,本发明提供了一种氮化物半导体发光器件,其至少包括欧姆接触层,p型氮化物半导体层,氮化物半导体发光层和n型氮化物半导体层, 层,其中在欧姆接触层和板层之间形成板粘合层,并且板粘合层由包含50质量%以上的与合金中所含的合金的主要成分相同的成分的合金制成 板层。