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1. 发明申请

WO2007129847A1 CHIP-TYPE LED PACKAGE AND LIGHT EMITTING APPARATUS HAVING THE SAME 审中-公开
标题翻译：芯片型LED封装和发光装置
公开(公告)号：WO2007129847A1
公开(公告)日：2007-11-15
申请号：PCT/KR2007/002229
申请日：2007-05-07
申请人： SEOUL SEMICONDUCTOR CO., LTD. , YOON, Yeo Jin
发明人： YOON, Yeo Jin
IPC分类号： H01L33/00
CPC分类号： H01L33/56 , H01L24/73 , H01L33/507 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed are a chip-type LED package and a light emitting apparatus having the same. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to provide a chip-type LED package in which device failure due to thermal deformation of the molding portion can be prevented.
摘要翻译：公开了一种芯片型LED封装和具有该封装的发光装置。芯片型LED封装包括其上形成有引线电极的导热基板。 LED芯片安装在导热基板上，下模制部分覆盖LED芯片。此外，具有比下成形部的硬度更高的硬度的上模制部分覆盖下模制部分。上模塑部分通过使用树脂粉末进行传递模塑而形成。因此，由于下模塑部分可以由具有小于上模塑部分的硬度的树脂形成，所以可以提供一种芯片型LED封装，其中可以防止由于模制部分的热变形引起的器件故障。

2. 发明申请

WO2010093190A9 LED CHIP FOR HIGH VOLTAGE OPERATION AND LED PACKAGE INCLUDING THE SAME 审中-公开
公开(公告)号：WO2010093190A9
公开(公告)日：2010-08-19
申请号：PCT/KR2010/000892
申请日：2010-02-12
申请人： SEOUL SEMICONDUCTOR CO., LTD. , LEE, Chung Hoon , SEO, Won Cheol , YOON, Yeo Jin , SHIN, Jin Cheol
发明人： LEE, Chung Hoon , SEO, Won Cheol , YOON, Yeo Jin , SHIN, Jin Cheol
IPC分类号： H01L33/16 , H01L33/02

3. 发明申请

WO2012039528A1 LIGHT-EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管封装及其制造方法
公开(公告)号：WO2012039528A1
公开(公告)日：2012-03-29
申请号：PCT/KR2010/008627
申请日：2010-12-03
申请人： SEOUL OPTO DEVICE CO., LTD. , SEO, Won Cheol , YOON, Yeo Jin
发明人： SEO, Won Cheol , YOON, Yeo Jin
IPC分类号： H01L33/48 , H01L33/52
CPC分类号： H01L33/385 , H01L25/167 , H01L33/08 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/16225 , H01L2933/0033
摘要： A Light Emitting Diode (LED) package and a method of manufacturing the same. The LED package includes a substrate. The substrate defines therein a cavity having a tapered shape, a stepped portion formed on the upper end of the cavity, and a through hole formed in the bottom of the cavity. A conductive film fills the through-hole and is formed on the bottom and the side surfaces of the cavity. An LED has a fluorescent layer thereon, and is flip-chip bonded onto the conductive film. An encapsulant encapsulates the cavity. A Zener diode or a rectifier is provided on the silicon substrate so that heat can be easily dissipated without an additional device, thereby reducing manufacturing cost and making miniaturization possible.
摘要翻译：发光二极管（LED）封装及其制造方法。 LED封装包括基板。基板在其中限定有具有锥形形状的空腔，形成在空腔的上端上的台阶部分和形成在空腔底部的通孔。导电膜填充通孔并形成在空腔的底部和侧表面上。 LED在其上具有荧光层，并且被倒装芯片接合到导电膜上。密封剂封装空腔。在硅衬底上提供齐纳二极管或整流器，使得在没有附加器件的情况下可以容易地耗散热量，从而降低制造成本并使得小型化成为可能。

4. 发明申请

WO2011083923A2 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011083923A2
公开(公告)日：2011-07-14
申请号：PCT/KR2010/009008
申请日：2010-12-16
申请人： SEOUL OPTO DEVICE CO., LTD. , SEO, Won Chul , KAL, Dae Sung , YE, Kyung Hee , KIM, Kyoung Wan , YOON, Yeo Jin
发明人： SEO, Won Chul , KAL, Dae Sung , YE, Kyung Hee , KIM, Kyoung Wan , YOON, Yeo Jin
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间;第一电极焊盘，电连接到第一导电类型半导体层;第二电极焊盘，设置在第二导电类型半导体层上;绝缘层，设置在第二导电类型半导体层导电型半导体层和第二电极焊盘;以及至少一个上延伸部分，电连接到第二电极焊盘，至少一个上延伸部分电连接到第二导电类型半导体层。

5. 发明申请

WO2008082097A1 LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2008082097A1
公开(公告)日：2008-07-10
申请号：PCT/KR2007/006463
申请日：2007-12-12
申请人： SEOUL OPTO DEVICE CO., LTD. , YOON, Yeo Jin , KIM, Chang Yeon
发明人： YOON, Yeo Jin , KIM, Chang Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L21/28 , H01L21/306 , H01L33/0079 , H01L33/22
摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.
摘要翻译：提供了制造垂直发光二极管的方法。该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露低掺杂的第一导电半导体层的一部分，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在与所述高掺杂的第一导电半导体层欧姆接触的大量所述沟槽中。

6. 发明申请

WO2008038842A1 LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING 审中-公开
标题翻译：具有电流扩展电极的发光二极管
公开(公告)号：WO2008038842A1
公开(公告)日：2008-04-03
申请号：PCT/KR2006/003804
申请日：2006-09-25
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Dae Won , YOON, Yeo Jin
发明人： KIM, Dae Won , YOON, Yeo Jin
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semi-conductor layer is located above the lower semiconductor layer such that edge regions of the lower semi-conductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counter-clockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.
摘要翻译：公开了一种具有用于改善电流扩展的电极延伸的发光二极管。发光二极管包括形成在基板上的下半导体层，上半导体层和有源层。上部半导体层位于下部半导体层的上方，使得下部半导体层的边缘区域露出，并且具有与斜面方向平行的凹入部，该边缘与邻近基板边缘的边缘区域的位置顺时针或逆时针方向曝光下半导体层。凹痕的远端彼此间隔开。同时，在与半导体层的第一角对应的下半导体层的露出区上形成下电极，在半导体层上的透明电极层上形成上电极。在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。在透明电极层上形成从上部电极延伸的上延伸部。下延伸和上延伸改善电流扩散，特别是在具有大面积的发光二极管中。

7. 发明申请

WO2012039527A1 HIGH EFFICIENCY LIGHT EMITTING DIODE 审中-公开
标题翻译：高效发光二极管
公开(公告)号：WO2012039527A1
公开(公告)日：2012-03-29
申请号：PCT/KR2010/008560
申请日：2010-12-01
申请人： SEOUL OPTO DEVICE CO., LTD. , YOON, Yeo Jin , SEO, Won Cheol
发明人： YOON, Yeo Jin , SEO, Won Cheol
IPC分类号： H01L33/10 , H01L33/20 , H01L33/22
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2933/0091
摘要： A high-efficiency LED has a light-reflecting structure to improve the internal reflecting efficiency of a substrate and minimize the amount of light absorbed by an electrode pad, thereby improving light-emitting efficiency. The high-efficiency LED includes a substrate, an n-semiconductor layer, an active layer, a p-semiconductor layer, and a transparent electrode layer. The substrate has a plurality of tapered recesses in the underside thereof, the recesses being filled with light-reflecting filler. This configuration minimizes the amount of light absorbed by the electrode pad and maximizes the internal reflecting efficiency of the substrate, so that the amount of light, which does not exit to the outside, is minimized, thereby improving light-emitting efficiency.
摘要翻译：高效率的LED具有光反射结构，能够提高基板的内部反射效率，并使由电极焊垫吸收的光量减到最小，从而提高发光效率。高效率LED包括基板，n半导体层，有源层，p半导体层和透明电极层。衬底在其下侧具有多个锥形凹部，凹部填充有光反射填料。这种构造使得由电极焊盘吸收的光量最小化并且使衬底的内部反射效率最大化，使得不会离开外部的光量被最小化，从而提高发光效率。

8. 发明申请

WO2012026695A2 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
标题翻译：发光二极管具有提高的光效
公开(公告)号：WO2012026695A2
公开(公告)日：2012-03-01
申请号：PCT/KR2011/005872
申请日：2011-08-11
申请人： SEOUL OPTO DEVICE CO., LTD. , YANG, Jeong Hee , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , OH, Sang Hyun , SUH, Duk Il , LEE, Keum Ju , LEE, Jin Woong , JEONG, Da Yeon
发明人： YANG, Jeong Hee , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , OH, Sang Hyun , SUH, Duk Il , LEE, Keum Ju , LEE, Jin Woong , JEONG, Da Yeon
IPC分类号： H01L33/36
CPC分类号： H01L33/385 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0091
摘要： xemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.
摘要翻译：本发明的实施例涉及发光二极管。根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

9. 发明申请

WO2011139079A2 PHARMACEUTICAL COMPOSITION FOR INHIBITING APOPTOSIS OF NEURON OR NEURODEGENERATION 审中-公开
标题翻译：用于抑制神经元或神经细胞凋亡的药物组合物
公开(公告)号：WO2011139079A2
公开(公告)日：2011-11-10
申请号：PCT/KR2011/003318
申请日：2011-05-03
申请人： SK BIOPHARMACEUTICALS CO., LTD. , PARK, Cheol Hyoung , MIN, Hye Kyung , PARK, In Suk , LIM, Mi Jung , LEE, Ji Won , CHUNG, Jin Yong , YOON, Yeo Jin , PARK, Joo Young
发明人： PARK, Cheol Hyoung , MIN, Hye Kyung , PARK, In Suk , LIM, Mi Jung , LEE, Ji Won , CHUNG, Jin Yong , YOON, Yeo Jin , PARK, Joo Young
IPC分类号： A61K31/4196 , A61K31/4245 , A61K31/433 , A61P25/00
CPC分类号： C07D261/08 , A61K31/4196 , A61K31/4245 , A61K31/433
摘要： Provided is a pharmaceutical composition for inhibiting apoptosis of neurons or neurodegeneration. The pharmaceutical composition effectively prevents or treats diseases related to apoptosis of neurons or neurodegeneration.
摘要翻译：提供了抑制神经元凋亡或神经变性的药物组合物。药物组合物有效地预防或治疗与神经元凋亡相关的疾病或神经变性。

10. 发明申请

WO2011074768A1 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011074768A1
公开(公告)日：2011-06-23
申请号：PCT/KR2010/006960
申请日：2010-10-12
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Kyoung Wan , YANG, Jeong Hee , YOON, Yeo Jin
发明人： KIM, Kyoung Wan , YANG, Jeong Hee , YOON, Yeo Jin
IPC分类号： H01L33/38 , H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L33/44
摘要： Disclosed is a light emitting diode. The light emitting diode includes: a substrate, a first conductive type semiconductor layer on the substrate, a second conductive type semiconductor layer on the first conductive type semiconductor layer, an active layer interposed between the first and second conductive type semiconductor layers, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad on the first conductive type semiconductor layer, and an insulation layer interposed between the first conductive type semiconductor layer and the second electrode pad and electrically insulating the second electrode pad from the first conductive type semiconductor layer. The second electrode pad is formed on the first conductive type semiconductor layer, thereby preventing current crowding and optical loss caused by electrode pads.
摘要翻译：公开了一种发光二极管。发光二极管包括：衬底，衬底上的第一导电类型半导体层，第一导电类型半导体层上的第二导电类型半导体层，介于第一和第二导电类型半导体层之间的有源层，第一电极电连接到第一导电类型半导体层的第二电极焊盘，第一导电类型半导体层上的第二电极焊盘以及介于第一导电类型半导体层和第二电极焊盘之间的绝缘层，并且将第二电极焊盘与第一导电类型半导体层电连接导电型半导体层。第二电极焊盘形成在第一导电类型半导体层上，从而防止由电极焊盘引起的电流拥挤和光损耗。

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