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1. 发明申请

WO2012173416A2 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MENUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制作方法
公开(公告)号：WO2012173416A2
公开(公告)日：2012-12-20
申请号：PCT/KR2012/004712
申请日：2012-06-15
申请人： SEOUL OPTO DEVICE CO., LTD. , SUH, Duck II , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , KIM, Ji Hye
发明人： SUH, Duck II , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , KIM, Ji Hye
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
摘要翻译：本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

2. 发明申请

WO2013048179A1 SUBSTRATE HAVING CONCAVE-CONVEX PATTERN, LIGHT-EMITTING DIODE INCLUDING THE SUBSTRATE, AND METHOD FOR FABRICATING THE DIODE 审中-公开
标题翻译：具有凹凸图案的基板，包括基板的发光二极管以及用于制造二极管的方法
公开(公告)号：WO2013048179A1
公开(公告)日：2013-04-04
申请号：PCT/KR2012/007912
申请日：2012-09-28
申请人： SEOUL OPTO DEVICE CO., LTD.
发明人： KIM, Jae Kwon , LEE, Sum Geun , KIM, Kyung Wan , YOON, Yeo Jin , SUH, Duk Il , KIM, Ji Hye
IPC分类号： H01L33/22
CPC分类号： H01L33/20 , H01L27/153 , H01L33/007 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/22 , H01L33/32
摘要： Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.
摘要翻译：提供具有凹凸图案的基板，包括该基板的发光二极管（LED）以及制造该LED的方法。 LED包括基板和设置在基板的上表面中并具有由凸部限定的凸起和凹部的凹凸图案。存在具有依次设置在基板上的第一导电半导体层，有源层和第二导电半导体层的单元发光器件。

3. 发明申请

WO2013027968A2 APPARATUS FOR FABRICATING INGOT, METHOD FOR PROVIDING MATERIAL, AND METHOD FOR FABRICATING INGOT 审中-公开
标题翻译：用于制造锭剂的设备，用于提供材料的方法以及用于制造锭剂的方法
公开(公告)号：WO2013027968A2
公开(公告)日：2013-02-28
申请号：PCT/KR2012/006515
申请日：2012-08-16
申请人： LG INNOTEK CO., LTD. , KIM, Ji Hye , MIN, Kyoung Seok , SHIN, Dong Geun
发明人： KIM, Ji Hye , MIN, Kyoung Seok , SHIN, Dong Geun
IPC分类号： C30B23/06 , C30B29/36 , H01L21/02
CPC分类号： C30B23/02 , C30B23/066 , C30B29/36
摘要： An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material, wherein the raw material comprises first powder and second powders having grain sizes different from each other. A method for providing a raw material according to the embodiment comprises preparing a crucible including a central area and an edge area which surrounds the central area; filling a first powder in the central area; and filling a second powder in the edge area, the second powder having a grain size different from a grain size of the first powder.
摘要翻译：根据该实施例的用于制造锭的设备包括用于接收原料的坩埚，其中原料包括具有彼此不同粒度的第一粉末和第二粉末。根据该实施例的用于提供原料的方法包括：制备包括中心区域和围绕中心区域的边缘区域的坩埚; 在中心区域填充第一粉末; 以及在边缘区域中填充第二粉末，第二粉末具有与第一粉末的粒度不同的粒度。

4. 发明申请

WO2012165853A2 ETCHING TREATMENT APPARATUS 审中-公开
标题翻译：蚀刻治疗装置
公开(公告)号：WO2012165853A2
公开(公告)日：2012-12-06
申请号：PCT/KR2012/004256
申请日：2012-05-30
申请人： LG INNOTEK CO., LTD. , KIM, Ji Hye
发明人： KIM, Ji Hye
IPC分类号： H01L21/306
CPC分类号： H01L21/683 , H01L21/67086 , H01L21/67757
摘要： Disclosed is an etching treatment apparatus. The etching treatment apparatus includes a crucible to receive a wafer, a wafer jig part having a groove into which the wafer is seated, and a size adjusting part inserted into the groove while making contact with the edge of the wafer.
摘要翻译：公开了一种蚀刻处理装置。蚀刻处理装置包括用于接收晶片的坩埚，具有晶片所在的槽的晶片夹具部件，以及与晶片的边缘接触地插入槽中的尺寸调整部件。

5. 发明申请

WO2006071045A1 TIME RESOURCE ALLOCATION METHOD OF ULTRA WIDEBAND COMMUNICATION SYSTEM 审中-公开
标题翻译：超宽带通信系统的时间资源分配方法
公开(公告)号：WO2006071045A1
公开(公告)日：2006-07-06
申请号：PCT/KR2005/004564
申请日：2005-12-27
申请人： LG ELECTRONICS INC. , KIM, Ji Hye , KIM, Kun Su , KIM, Jong Sung , SEONG, Hang Dong
发明人： KIM, Ji Hye , KIM, Kun Su , KIM, Jong Sung , SEONG, Hang Dong
IPC分类号： H04L12/28
CPC分类号： H04W16/14 , H04B1/69 , H04W52/283 , H04W64/006 , H04W72/0413 , H04W72/0446 , H04W84/18 , H04W92/18
摘要： A time resource allocation method of ultra wideband (UWB) communication system is disclosed wherein transmission power is adjusted in a UWB communication system to appropriately allocate time resources of data transmission period. The present invention is such that determination is made as to whether there are time resources for allocation to a second UWB communication device if the second UWB communication device requests allocation of time resources while a plurality of first UWB communication devices are allocated with time resources of data transmission period. As a result of the determination, if time resources are lacking for allocation to the second UWB communication device, the first UWB communication device and the second UWB communication device measure a distance therebetween, and a wireless network region is divided by the measured distance and adjusted transmission power to enable to allocate time resource to the second UWB communication device.
摘要翻译：公开了一种超宽带（UWB）通信系统的时间资源分配方法，其中在UWB通信系统中调整发送功率以适当地分配数据传输周期的时间资源。本发明使得如果第二UWB通信设备在多个第一UWB通信设备被分配有数据的时间资源的情况下请求分配时间资源，则确定是否存在用于分配给第二UWB通信设备的时间资源传输期。作为确定的结果，如果缺少分配给第二UWB通信设备的时间资源，则第一UWB通信设备和第二UWB通信设备测量它们之间的距离，并且将无线网络区域除以测量的距离并且被调整发送功率以能够将时间资源分配给第二UWB通信设备。

6. 发明申请

WO2011136517A2 METHOD OF PREPARING SILICON TETRAFLUORIDE BY USING CRYSTALLINE SILICA 审中-公开
标题翻译：使用结晶二氧化硅制备硅四氯化物的方法
公开(公告)号：WO2011136517A2
公开(公告)日：2011-11-03
申请号：PCT/KR2011/002981
申请日：2011-04-25
申请人： KCC CORPORATION , KANG, Kyoung Hoon , CHO, Yeon Seok , KIM, Se Jong , YOO, Young Shin , JUN, Moon Gue , SHIM, Jeong Mo , LEE, Hyun Dong , KIM, Ji Hye , SONG, Min Wook
发明人： KANG, Kyoung Hoon , CHO, Yeon Seok , KIM, Se Jong , YOO, Young Shin , JUN, Moon Gue , SHIM, Jeong Mo , LEE, Hyun Dong , KIM, Ji Hye , SONG, Min Wook
IPC分类号： C01B33/107 , C01B9/08
CPC分类号： C01B9/08 , C01B33/10705
摘要： The present invention relates to a method of preparing silicon tetrafluoride (STF, SiF 4 ) by using crystalline silica (SiO 2 ). More specifically, the present invention relates to a method of preparing silicon tetrafluoride by reacting finely divided crystalline silica and hydrogen fluoride (HF) in the presence of concentrated sulfuric acid in a continuous manner. According to the present invention, silicon tetrafluoride can be economically prepared with high yield from crystalline silica which exists abundantly in the natural world, and the process productivity, workability and controllability can be improved remarkably. In addition, the problem of corrosion in the recycling process by concentrating diluted sulfuric acid can be solved through controlling the ratio between reactants such that no incorporated hydrogen fluoride remains after the reaction, or on the other hand the difficulty in filtering the product by finely divided particles can be avoided through controlling the ratio between reactants such that the crystalline silica reactant is consumed completely. Furthermore, since the used sulfuric acid can be isolated and recycled, the generation of discarded sulfuric acid can be minimized.
摘要翻译：本发明涉及通过使用结晶二氧化硅（SiO 2）制备四氟化硅（STF，SiF 4）的方法。更具体地说，本发明涉及通过在浓硫酸的存在下以连续的方式使细碎的结晶二氧化硅和氟化氢（HF）反应制备四氟化硅的方法。根据本发明，可以从自然界中大量存在的结晶二氧化硅以高产率经济地制备四氟化硅，并且可以显着提高工艺生产率，可加工性和可控性。此外，通过浓缩稀硫酸的再循环过程中的腐蚀问题可以通过控制反应物之间的比例来解决，使得在反应后不残留加入的氟化氢，或者另一方面难以通过细分的过滤产物可以通过控制反应物之间的比例使得结晶二氧化硅反应物完全消耗来避免颗粒。此外，由于使用的硫酸可以被分离和再循环，所以废弃硫酸的产生可以最小化。

7. 发明申请

WO2013100294A1 APPARATUS FOR FABRICATING INGOT AND METHOD OF FABRICATING INGOT 审中-公开
标题翻译：用于制造内容的装置和制造INGOT的方法
公开(公告)号：WO2013100294A1
公开(公告)日：2013-07-04
申请号：PCT/KR2012/005455
申请日：2012-07-10
申请人： LG INNOTEK CO., LTD. , KIM, Ji Hye , SON, Chang Hyun
发明人： KIM, Ji Hye , SON, Chang Hyun
IPC分类号： C30B23/02 , C30B29/36 , H01L21/205
CPC分类号： C30B23/02 , C30B23/00 , C30B23/063 , C30B29/36
摘要： Disclosed is an apparatus for fabricating an ingot, and a method of fabricating the ingot. The apparatus includes a crucible to receive a raw material, and a holder to fix a seed positioned on the raw material. The holder fixes a plurality of seeds.
摘要翻译：公开了一种用于制造锭的装置，以及制造锭的方法。该装置包括用于容纳原料的坩埚和用于固定位于原料上的种子的保持器。保持器固定多个种子。

8. 发明申请

WO2013019026A2 APPARATUS FOR FABRICATING INGOT 审中-公开
标题翻译：用于制造锭剂的装置
公开(公告)号：WO2013019026A2
公开(公告)日：2013-02-07
申请号：PCT/KR2012/005989
申请日：2012-07-26
申请人： LG INNOTEK CO., LTD. , HEO, Seon , KIM, Ji Hye
发明人： HEO, Seon , KIM, Ji Hye
IPC分类号： C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B23/02 , C30B23/00 , C30B29/36
摘要： An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a seed holder for fixing a seed disposed over the raw material, wherein a buffer layer is placed between the seed holder and the seed.
摘要翻译：根据该实施例的用于制造锭的设备包括用于接收原材料的坩埚; 以及用于固定设置在原料上的种子的种子保持器，其中在种子保持器和种子之间放置缓冲层。

9. 发明申请

WO2008093920A2 1,2-DIHYDRO-1-OXOPHTHALAZINYL DERIVATIVES HAVING BIOLOGICAL ACTIVITY ON SEROTONIN RECEPTORS 5-HT2A AND 5-HT2C, AND PREPARATION THEREOF 审中-公开
标题翻译：具有SEROTONIN受体5-HT2A和5-HT2C的生物活性的1,2-二氢-1-氧代吗啉衍生物及其制备方法
公开(公告)号：WO2008093920A2
公开(公告)日：2008-08-07
申请号：PCT/KR2007/003198
申请日：2007-07-02
申请人： DONGBU HITEK CO., LTD. , KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , PAE, Ae Nim , CHO, Yong Seo , CHOO, Hyunah , CHA, Joo Hwan , KIM, Ji Hye , KOH, Hun Yeong , PARK, Woo-Kyu , KONG, Jae Yang , CHAE, Myeong Yun , CHO, Insun , HWANG, Bong Woon , LEE, Dong Ha
发明人： PAE, Ae Nim , CHO, Yong Seo , CHOO, Hyunah , CHA, Joo Hwan , KIM, Ji Hye , KOH, Hun Yeong , PARK, Woo-Kyu , KONG, Jae Yang , CHAE, Myeong Yun , CHO, Insun , HWANG, Bong Woon , LEE, Dong Ha
IPC分类号： C07D401/12
CPC分类号： C07D237/32
摘要： The present invention relates to a novel 1,2-dihydro-1-oxophthalazinyl piperazine compound having biological activity as serotonin receptor antagonist, a preparation method of the compound and a pharmaceutical composition for the treatment and prevention of central nervous system diseases comprising the compound.
摘要翻译：本发明涉及具有生物活性作为血清素受体拮抗剂的新型1,2-二氢-1-氧代嗪嗪哌嗪化合物，该化合物的制备方法和用于治疗和预防包含该化合物的中枢神经系统疾病的药物组合物。

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