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    • 2. 发明申请
    • PROGRAMMABLE LOGIC DEVICE
    • 可编程逻辑器件
    • WO2012157593A1
    • 2012-11-22
    • PCT/JP2012/062246
    • 2012-05-08
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.YONEDA, SeiichiNISHIJIMA, Tatsuji
    • YONEDA, SeiichiNISHIJIMA, Tatsuji
    • H03K19/177
    • H03K19/0013H01L27/1225H01L27/124H01L29/7869H03K19/0008H03K19/17736H03K19/17744
    • An object is to provide a programmable logic device having logic blocks connected to each other by a programmable switch, where the programmable switch is characterized by an oxide semiconductor transistor incorporated therein. The extremely low off-state current of the oxide semiconductor transistor provides a function as a non-volatile memory due to its high ability to hold a potential of a gate electrode of a transistor which is connected to the oxide semiconductor transistor. The ability of the oxide semiconductor transistor to function as a non-volatile memory allows the configuration data for controlling the connection of the logic blocks to be maintained even in the absence of a power supply potential. Hence, the rewriting process of the configuration data at starting of the device can be omitted, which contributes to the reduction in power consumption of the device.
    • 目的是提供一种具有通过可编程开关彼此连接的逻辑块的可编程逻辑器件,其中可编程开关的特征在于结合在其中的氧化物半导体晶体管。 氧化物半导体晶体管的非常低的截止电流由于其保持与氧化物半导体晶体管连接的晶体管的栅极的电位的高能力而提供作为非易失性存储器的功能。 氧化物半导体晶体管用作非易失性存储器的能力允许用于控制逻辑块的连接的配置数据即使在没有电源电位的情况下也被维持。 因此,可以省略在设备启动时的配置数据的重写处理,这有助于降低设备的功耗。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • WO2012157533A1
    • 2012-11-22
    • PCT/JP2012/062073
    • 2012-05-02
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.YONEDA, Seiichi
    • YONEDA, Seiichi
    • H03K3/356H01L21/822H01L21/8234H01L21/8238H01L27/04H01L27/06H01L27/08H01L27/088H01L27/092H01L29/786H03K3/037
    • H03K19/00315H03K19/0963
    • A semiconductor device in which an input terminal is electrically connected to a first terminal of a first transmission gate; a second terminal of the first transmission gate is electrically connected to a first terminal of a first inverter and a second terminal of a functional circuit; a second terminal of the first inverter and a first terminal of the functional circuit are electrically connected to a first terminal of a second transmission gate; a second terminal of the second transmission gate is electrically connected to a first terminal of a second inverter and a second terminal of a clocked inverter; a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to an output terminal; and the functional circuit includes a data holding portion between a transistor with small off-state current and a capacitor.
    • 一种半导体器件,其中输入端子电连接到第一传输门的第一端子; 第一传输门的第二端子电连接到第一反相器的第一端子和功能电路的第二端子; 第一反相器的第二端子和功能电路的第一端子电连接到第二传输门的第一端子; 第二传输门的第二端子电连接到第二反相器的第一端子和时钟反相器的第二端子; 第二反相器的第二端子和时钟反相器的第一端子电连接到输出端子; 并且功能电路包括在具有小截止电流的晶体管和电容器之间的数据保持部分。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
    • 半导体器件,电子元件和电子器件
    • WO2018087630A1
    • 2018-05-17
    • PCT/IB2017/056802
    • 2017-11-02
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    • IKEDA, TakayukiYONEDA, Seiichi
    • G11C11/56G11C11/405
    • A highly reliable semiconductor device is provided. A memory cell includes a first transistor and a second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. The first transistor is configured to hold charge corresponding to first data retained in the memory cell when turned off. The data writing circuit is configured to write the first data and correction data to the memory cell. The data reading circuit is configured to read a first voltage value corresponding to the first data, read a second voltage value corresponding to the correction data written to the memory cell, convert a voltage value that is equivalent to a difference between the first voltage value and the second voltage value into corrected first data, and output the corrected first data to the data writing circuit.
    • 提供了一种高度可靠的半导体器件。 存储器单元包括第一晶体管和第二晶体管。 第一晶体管的源极和漏极中的一个电连接到第二晶体管的栅极。 第一晶体管被配置为当关闭时保持与存储器单元中保留的第一数据相对应的电荷。 数据写入电路被配置为将第一数据和校正数据写入存储器单元。 数据读取电路被配置为读取与第一数据相对应的第一电压值,读取与写入到存储单元的校正数据相对应的第二电压值,将等于第一电压值和第二电压值之间的差的电压值 将第二电压值转换为校正的第一数据,并将校正后的第一数据输出到数据写入电路。
    • 10. 发明申请
    • STORAGE CIRCUIT AND SEMICONDUCTOR DEVICE
    • 存储电路和半导体器件
    • WO2015030150A1
    • 2015-03-05
    • PCT/JP2014/072665
    • 2014-08-22
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    • MAEHASHI, YukioYONEDA, SeiichiUESUGI, Wataru
    • H03K3/356H03K3/037H03K3/3562
    • H03K3/012H03K3/356H03K3/356104
    • The storage circuit includes first and second logic circuits, first and second transistors whose channel formation regions include an oxide semiconductor, and a capacitor. The first and second transistors are connected to each other in series, and the capacitor is connected to a connection node of the first and second transistors. The first transistor functions as a switch that controls connection between an output terminal of the first logic circuit and the capacitor. The second transistor functions as a switch that controls connection between the capacitor and an input terminal of the second logic circuit. Clock signals whose phases are inverted from each other are input to gates of the first and second transistors. Since the storage circuit has a small number of transistors and a small number of transistors controlled by the clock signals, the storage circuit is a low-power circuit.
    • 存储电路包括第一和第二逻辑电路,其沟道形成区域包括氧化物半导体的第一和第二晶体管以及电容器。 第一和第二晶体管串联连接,电容器连接到第一和第二晶体管的连接节点。 第一晶体管用作控制第一逻辑电路的输出端子和电容器之间的连接的开关。 第二晶体管用作控制电容器和第二逻辑电路的输入端之间的连接的开关。 其相位相互反相的时钟信号被输入到第一和第二晶体管的栅极。 由于存储电路具有少量晶体管和由时钟信号控制的少量晶体管,所以存储电路是低功率电路。