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1. 发明申请

WO2017182909A1 SEPARATION METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE 审中-公开
标题翻译：柔性装置的分离方法和制造方法
公开(公告)号：WO2017182909A1
公开(公告)日：2017-10-26
申请号：PCT/IB2017/052070
申请日：2017-04-11
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , YANAKA, Junpei , YASUMOTO, Seiji , OHNO, Masakatsu , ADACHI, Hiroki
IPC分类号： H01L21/336 , H01L21/02 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/10
摘要： A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 micro meter or more and 3 micro meter or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.
摘要翻译：提供了具有高批量生产率的低成本分离方法。可以通过在形成基底上使用光敏和热固性材料形成厚度为0.1微米或更大并且3微米或更小的第一层，通过在第一层中形成开口，形成包括开口的树脂层使用光刻法形成与硅树脂层的开口部重叠的硅层或氧化物层，在该树脂层上形成由金属氧化物构成的晶体管，在与该树脂层相同的制造工序中形成的导电层在硅层或氧化物层上形成晶体管的源极或漏极，用激光照射树脂层和硅层以及氧化物层中的一个，并且将晶体管和导电层从形成衬底分离

2. 发明申请

WO2018042284A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2018042284A1
公开(公告)日：2018-03-08
申请号：PCT/IB2017/055049
申请日：2017-08-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , SATO, Masataka , IKEZAWA, Naoki , YANAKA, Junpei , IDOJIRI, Satoru
IPC分类号： H01L21/02 , B23K26/57 , B32B9/00 , B32B15/04 , B32B38/18 , G09F9/00 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L31/1892 , H01L21/02345 , H01L21/02488 , H01L21/02694 , H01L21/6835 , H01L27/1225 , H01L27/1266 , H01L29/66969 , H01L31/1896 , H01L51/003 , H01L2221/68386 , H01L2224/83052 , H01L2924/35121
摘要： The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.
摘要翻译：半导体器件制造工艺的成品率增加。半导体器件的生产率增加。在衬底上形成第一材料层，在第一材料层上形成第二材料层，并且将第一材料层和第二材料层彼此分离，从而制造半导体器件。另外，包括第一材料层和第二材料层的叠层优选在分离之前被加热。第一材料层包括氢，氧和水中的一种或多种。例如，第一材料层包括金属氧化物。第二材料层包括树脂（例如聚酰亚胺或丙烯酸树脂）。通过切割氢键将第一材料层和第二材料层彼此分开。第一材料层和第二材料层以这样的方式彼此分离，使得在第一材料层和第二材料层之间的界面处或在界面附近通过热处理分离出的水被光照射。

3. 发明申请

WO2015125046A1 LIGHT-EMITTING DEVICE AND PEELING METHOD 审中-公开
标题翻译：发光装置和剥离方法
公开(公告)号：WO2015125046A1
公开(公告)日：2015-08-27
申请号：PCT/IB2015/051007
申请日：2015-02-11
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： SAKUISHI, Tatsuya , UCHIDA, Yutaka , ADACHI, Hiroki , EGUCHI, Saki , YANAKA, Junpei , KUMAKURA, Kayo , YASUMOTO, Seiji , YOKOYAMA, Kohei , CHIDA, Akihiro
IPC分类号： H01L21/02 , H01L27/12 , H01L51/50 , H05B33/02 , H05B33/04 , H05B33/10
CPC分类号： H01L51/0097 , B32B7/02 , B32B7/06 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B17/00 , B32B17/06 , B32B27/20 , B32B27/286 , B32B27/30 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B37/02 , B32B37/10 , B32B37/1292 , B32B37/18 , B32B38/10 , B32B2250/05 , B32B2255/20 , B32B2260/021 , B32B2260/046 , B32B2264/102 , B32B2307/202 , B32B2307/40 , B32B2307/50 , B32B2307/536 , B32B2307/558 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , H01L51/003 , H01L51/5253 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/°C, or preferably less than or equal to 30 ppm/°C.
摘要翻译：提供了灵活的设备。柔性装置的粘合层的硬度设定为高于70°的肖氏D值，或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小比58ppm /℃，或优选小于或等于30ppm /℃。

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