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    • 1. 发明申请
    • SEPARATION METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE
    • 柔性装置的分离方法和制造方法
    • WO2017182909A1
    • 2017-10-26
    • PCT/IB2017/052070
    • 2017-04-11
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    • YAMAZAKI, ShunpeiYANAKA, JunpeiYASUMOTO, SeijiOHNO, MasakatsuADACHI, Hiroki
    • H01L21/336H01L21/02H01L27/12H01L29/786H01L51/50H05B33/10
    • A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 micro meter or more and 3 micro meter or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.
    • 提供了具有高批量生产率的低成本分离方法。 可以通过在形成基底上使用光敏和热固性材料形成厚度为0.1微米或更大并且3微米或更小的第一层,通过在第一层中形成开口,形成包括开口的树脂层 使用光刻法形成与硅树脂层的开口部重叠的硅层或氧化物层,在该树脂层上形成由金属氧化物构成的晶体管,在与该树脂层相同的制造工序中形成的导电层 在硅层或氧化物层上形成晶体管的源极或漏极,用激光照射树脂层和硅层以及氧化物层中的一个,并且将晶体管和导电层从形成衬底分离