专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011008614A1 MAGNETIC STACK DESIGN 审中-公开
标题翻译：磁性堆叠设计
公开(公告)号：WO2011008614A1
公开(公告)日：2011-01-20
申请号：PCT/US2010/041296
申请日：2010-07-08
申请人： SEAGATE TECHNOLOGY LLC , XI, Haiwen , KHOUEIR, Antoine , LEE, Brian , RYAN, Patrick , TANG, Michael , JIN, Insik , ANDERSON, Paul
发明人： XI, Haiwen , KHOUEIR, Antoine , LEE, Brian , RYAN, Patrick , JIN, Insik , ANDERSON, Paul
IPC分类号： H01F10/32 , H01L43/08
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

2. 发明申请

WO2009158053A1 FERROELECTRIC MEMORY USING MULTIFERROICS 审中-公开
标题翻译：使用多媒体的电磁记忆
公开(公告)号：WO2009158053A1
公开(公告)日：2009-12-30
申请号：PCT/US2009/038493
申请日：2009-03-27
申请人： SEAGATE TECHNOLOGY LLC , XI, Haiwen , TIAN, Wei , LI, Yang , JIN, Insik , XUE, Song, S.
发明人： XI, Haiwen , TIAN, Wei , LI, Yang , JIN, Insik , XUE, Song, S.
IPC分类号： H01L29/78
CPC分类号： G11C11/22 , H01F10/22 , H01F10/24 , H01L29/78391
摘要： Ferroelectric memory using multiferroics is described. The multiferrroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separates the data storage cell from the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.
摘要翻译：描述了使用多铁性的铁电存储器。多层存储器包括具有源极区，漏极区和分离源极区和漏极区的沟道区的衬底。电绝缘层与源极区，漏极区和沟道区相邻。具有复合多铁层的数据存储单元与电绝缘层相邻。电绝缘层将数据存储单元与沟道区分开。控制栅电极与数据存储单元相邻。数据存储单元将控制栅电极的至少一部分与电绝缘层分离。

3. 发明申请

WO2010102107A1 ST-RAM CELLS WITH PERPENDICULAR ANISOTROPY 审中-公开
标题翻译： ST-RAM细胞与PERPENDICULAR ANISOTROPY
公开(公告)号：WO2010102107A1
公开(公告)日：2010-09-10
申请号：PCT/US2010/026210
申请日：2010-03-04
申请人： SEAGATE TECHNOLOGY LLC , WANG, Dexin , XI, Haiwen , ZHENG, Yuankai , DIMITROV, Dimitar
发明人： WANG, Dexin , XI, Haiwen , ZHENG, Yuankai , DIMITROV, Dimitar
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , H01L43/08
摘要： Magnetic spin-torque memory cells, also referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or "out-of-plane". A memory or magnetic junction cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.
摘要翻译：具有相对于晶片平面排列的相关铁磁层的磁各向异性（即零磁场和零电流的磁化方向）的磁自旋转矩存储单元也称为磁隧道结电池，或“ 平面”。存储器或磁结电池可以具有铁磁自由层，第一固定参考层和第二固定参考层，每个具有垂直于衬底的磁各向异性。自由层具有垂直于衬底的磁化取向，其可通过旋转扭矩从第一取向切换到相反的第二取向。

4. 发明申请

WO2010126854A1 MAGNETIC STACK WITH SPIN TORQUE SWITCHING HAVING A LAYER ASSISTING SAID SWITCHING 审中-公开
标题翻译：带有转盘辅助开关的旋转扭矩开关的磁性堆叠
公开(公告)号：WO2010126854A1
公开(公告)日：2010-11-04
申请号：PCT/US2010/032483
申请日：2010-04-27
申请人： SEAGATE TECHNOLOGY LLC , ZHENG, Yuankai , XI, Haiwen , JUNG, Wonjoon , FENG, Xuebing , LOU, Xiaohua , GAO, Zheng
发明人： ZHENG, Yuankai , XI, Haiwen , JUNG, Wonjoon , FENG, Xuebing , LOU, Xiaohua , GAO, Zheng
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
摘要： A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.
摘要翻译：一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。辅助层可具有面内或面外各向异性。

5. 发明申请

WO2009142828A1 WRITE VERIFY METHOD FOR RESISTIVE RANDOM ACCESS MEMORY 审中-公开
标题翻译：用于电阻随机访问存储器的写作验证方法
公开(公告)号：WO2009142828A1
公开(公告)日：2009-11-26
申请号：PCT/US2009/038770
申请日：2009-03-30
申请人： SEAGATE TECHNOLOGY LLC , XI, Haiwen , XUE, Song, S.
发明人： XI, Haiwen , XUE, Song, S.
IPC分类号： G11C16/02 , G11C16/34
CPC分类号： G11C13/0069 , G11C11/5664 , G11C11/5685 , G11C13/0007 , G11C13/0014 , G11C13/0016 , G11C13/0064 , G11C2013/0073 , G11C2211/5621 , G11C2213/31 , G11C2213/32
摘要： Write verify methods for resistance random access memory (RRAM) are disclosed. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state and setting a counter to zero. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value and adding one to the counter. This step is repeated until either the counter reaches a predetermined number or until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value and adding one to the counter. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until either the counter reaches a predetermined number or until all the high resistance state resistance value is less than the upper resistance limit value.
摘要翻译：公开了电阻随机存取存储器（RRAM）的写验证方法。所述方法包括在RRAM单元之间施加复位操作电压脉冲，以将RRAM单元的电阻从低电阻状态改变为高电阻状态，并将计数器设置为零。然后，该方法包括如果RRAM单元具有小于所选择的较低电阻极限值的高电阻状态电阻值并且将一个加到计数器上，则在RRAM单元之间施加正向复位电压脉冲。重复该步骤直到计数器达到预定数量，或直到高电阻状态电阻值大于下限电阻值。该方法还包括如果RRAM单元具有高电阻状态电阻值大于所选上限电阻值并将一个加到计数器上，则在RRAM单元之间施加反向复位电压脉冲。反向复位电压脉冲具有与第一极性相反的第二极性。重复该步骤直到计数器达到预定数量，或者直到所有高电阻状态电阻值都小于上限电阻值。

6. 发明申请

WO2010107869A1 STUCK-AT DEFECT CONDITION REPAIR FOR A NON-VOLATILE MEMORY CELL 审中-公开
标题翻译：对非易失性存储器细胞进行STUCK-AT缺陷条件修复
公开(公告)号：WO2010107869A1
公开(公告)日：2010-09-23
申请号：PCT/US2010/027593
申请日：2010-03-17
申请人： SEAGATE TECHNOLOGY LLC , WANG, Alan, Xuguang , WANG, Xiaobin , DIMITROV, Dimitar V. , LI, Hai , XI, Haiwen , LIU, Harry Hongyue
发明人： WANG, Alan, Xuguang , WANG, Xiaobin , DIMITROV, Dimitar V. , LI, Hai , XI, Haiwen , LIU, Harry Hongyue
IPC分类号： G11C11/16 , G11C29/04
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method (210) and apparatus (180, 200) for repairing a stuck-at defect condition in a non- volatile memory cell (124), such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element (158) has a magnetic tunneling junction (MTJ) and a repair plane (168) located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元（124）中的卡入缺陷状况的方法（210）和装置（180,200）。在一些实施例中，电阻感测元件（158）具有位于电阻感测元件附近的磁性隧道结（MTJ）和修复平面（168）。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式