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1. 发明申请

WO2019125934A1 METHOD FOR CONTROLLING THE AMOUNT OF RADIATION HAVING A PREDETERMINED WAVELENGTH TO BE ABSORBED BY A STRUCTURE DISPOSED ON A SEMICONDUCTOR 审中-公开
公开(公告)号：WO2019125934A1
公开(公告)日：2019-06-27
申请号：PCT/US2018/065634
申请日：2018-12-14
申请人： RAYTHEON COMPANY
发明人： CHENG, Kezia , ALAVI, Kamal, Tabatabaie , WILLIAMS, Adrian, D. , MACDONALD, Christopher, J. , HWANG, Kiuchul
IPC分类号： H01L21/04 , H01L29/45 , H01L21/263 , H01L21/285
摘要： A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

2. 发明申请

WO2016164666A1 MONOLITHIC INTEGRATED CIRCUIT (MMIC) STRUCTURE HAVING COMPOSITE ETCH STOP LAYER AND METHOD FOR FORMING SUCH STRUCTURE 审中-公开
标题翻译：具有复合蚀刻停止层的单片集成电路（MMIC）结构和形成这种结构的方法
公开(公告)号：WO2016164666A1
公开(公告)日：2016-10-13
申请号：PCT/US2016/026563
申请日：2016-04-08
申请人： RAYTHEON COMPANY
发明人： WILLIAMS, Adrian, D.
IPC分类号： H01L29/778 , H01L49/02 , H01L29/423 , H01L29/20 , H01L27/06
CPC分类号： H01L29/7787 , H01L21/0217 , H01L21/02274 , H01L21/0272 , H01L21/31111 , H01L21/31116 , H01L21/76805 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76895 , H01L23/3171 , H01L23/3185 , H01L23/3192 , H01L23/485 , H01L23/66 , H01L27/0605 , H01L27/0629 , H01L28/60 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/475 , H01L29/66439 , H01L29/66462 , H01L29/7786 , H01L2223/6672 , H01L2223/6683
摘要： A method for forming a semiconductor structure having a transistor device with a control electrode (20) for controlling a flow of carriers between a first electrode (16) and a second electrode (18) includes a passivation layer (24) with an etch stop layer (26) deposited on the passivation layer. The etch stop layer includes a first etch stop layer (26a) on the passivation layer, a buffer layer (26b) on the first etch stop layer, and a second etch stop layer (26c) on the buffer layer and a dielectric layer (40) formed over the etch stop layer. A window is etched through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer. A metal layer (34a) is formed on a portion of the etch stop layer and a second metal layer (56a) is deposited on the portion of the dielectric layer formed on the first mentioned metal layer.
摘要翻译：一种用于形成具有晶体管器件的半导体结构的方法，具有用于控制第一电极（16）和第二电极（18）之间的载流子流动的控制电极（20）的方法包括具有蚀刻停止层（26）沉积在钝化层上。蚀刻停止层包括钝化层上的第一蚀刻停止层（26a），第一蚀刻停止层上的缓冲层（26b）和缓冲层上的第二蚀刻停止层（26c）和介电层（40））形成在蚀刻停止层上。通过控制电极上的电介质层中的选定区域蚀刻窗口，露出蚀刻停止层的一部分。在蚀刻停止层的一部分上形成金属层（34a），并且在形成在第一金属层上的介电层的部分上沉积第二金属层（56a）。

3. 发明申请

WO2018022340A1 MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) AND METHOD FOR FORMING SUCH MMIC HAVING RAPID THERMAL ANNEALING COMPENSATION ELEMENTS 审中-公开
标题翻译：单片微波集成电路（MMIC）及形成这种具有快速热退火补偿元件的MMIC的方法
公开(公告)号：WO2018022340A1
公开(公告)日：2018-02-01
申请号：PCT/US2017/042345
申请日：2017-07-17
申请人： RAYTHEON COMPANY
发明人： ALTUNKILIC, Fikret , WILLIAMS, Adrian, D. , MACDONALD, Christolpher, J. , TABATABAIE ALAVI, Kamal
IPC分类号： H01L21/285 , H01L21/324 , H01L23/66 , H01L27/06
摘要： A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing "dummy" fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of "dummy" fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the "dummy" fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the "dummy" fill elements into microwave lossy "dummy" fill elements.
摘要翻译：一种方法和结构，所述结构具有衬底，有源器件半导体区域中的有源器件; 微波传输线，在基底上，电连接到有源器件，以及微波能量吸收“虚拟” 在衬底上填充元素。该方法包括提供具有衬底，在该结构的表面上的有源器件区，在该有源器件区上的欧姆接触材料以及多个“虚拟” 在快速热退火处理期间在表面上填充元件以提供衬底的均匀加热，欧姆接触材料和“虚拟” 填充具有相同辐射能量反射率的元件。快速热退火处理在欧姆接触材料和有源器件区域之间形成欧姆接触并且同时将“虚拟” 将元件填充到微波有损“虚拟” 填充元素。

4. 发明申请

WO2015126588A1 SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES 审中-公开
标题翻译：具有T形电极的半导体结构
公开(公告)号：WO2015126588A1
公开(公告)日：2015-08-27
申请号：PCT/US2015/013445
申请日：2015-01-29
申请人： RAYTHEON COMPANY
发明人： HWANG, Kiuchul , SHAW, Dale, M. , WILLIAMS, Adrian, D.
IPC分类号： H01L21/28 , H01L29/423 , H01L21/285
CPC分类号： H01L21/28114 , H01L21/283 , H01L21/28587 , H01L29/42316
摘要： A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.
摘要翻译：具有T形电极的半导体结构。电极具有从顶部延伸到基底表面的顶部和较窄的茎部。固体电介质层具有与电极杆的下部的侧壁并排并邻接的侧部。顶部的底表面通过诸如空气的非固体电介质与上表面部分间隔开。

5. 发明申请

WO2014158752A1 MONOLITHIC INTEGRATED CIRCUIT (MMIC) STRUCTURE AND METHOD FOR FORMING SUCH STRUCTURE 审中-公开
标题翻译：单片集成电路（MMIC）结构和形成这种结构的方法
公开(公告)号：WO2014158752A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/019860
申请日：2014-03-03
申请人： RAYTHEON COMPANY
发明人： WILLIAMS, Adrian, D. , ALCORN, Paul, M.
IPC分类号： H01L27/06 , H01L21/8252 , H01L29/778 , H01L23/29 , H01L23/31 , H01L29/20 , H01L49/02
CPC分类号： H01L21/31144 , H01L21/8252 , H01L23/291 , H01L23/3171 , H01L27/0605 , H01L27/0629 , H01L29/2003 , H01L29/66462 , H01L29/66863 , H01L29/7786 , H01L29/812 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a semiconductor structure having a transistor device with a control electrode (20) for controlling a flow of carriers between & first electrode (16) and a second electrode (18). A. passivation layer (24) is deposited over the first electrode, the second electrode and the control electrode. An etch stop layer (26) is deposited on the passivation layer over the control electrode. A dielectric layer (40) is formed over the etch stop layer. A window is etched, through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode. A metal layer (34) is formed on a portion of the etch stop layer, and the dielectric layer is also formed on the metal layer. A second metal layer (56) is deposited on the portion of the dielectric layer formed on the first mentioned metal layer.
摘要翻译：一种用于形成具有晶体管器件的半导体结构的方法，所述晶体管器件具有用于控制第一电极（16）和第二电极（18）之间的载流子流的控制电极（20）。 A.钝化层（24）沉积在第一电极，第二电极和控制电极上。蚀刻停止层（26）沉积在控制电极上的钝化层上。介电层（40）形成在蚀刻停止层上。通过控制电极上的电介质层中的选定区域蚀刻窗口，以露出设置在控制电极上的蚀刻停止层的一部分。金属层（34）形成在蚀刻停止层的一部分上，电介质层也形成在金属层上。第二金属层（56）沉积在形成在第一金属层上的电介质层的部分上。

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