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    • 4. 发明申请
    • MULTIPLE PROGRAMMING OF FLASH MEMORY WITHOUT ERASE
    • 无擦除的闪存存储器的多个编程
    • WO2011128867A1
    • 2011-10-20
    • PCT/IB2011/051613
    • 2011-04-14
    • RAMOT AT TEL AVIV UNIVERSITY LTD.SHARON, EranALROD, IdanLITSYN, SimonILANI, Ishai
    • SHARON, EranALROD, IdanLITSYN, SimonILANI, Ishai
    • G11C16/10G11C16/34G11C11/56
    • G11C16/102G06F12/02G11C11/5628G11C16/349
    • To store, successively, in a plurality of memory cells, first and second pluralities of input bits that are equal in number, a first transformation transforms the first input bits into a first plurality of transformed bits. A first portion of the cells is programmed to store the first transformed bits according to a mapping of bit sequences to cell levels, but, if the first transformation has a variable output length, only if there are few enough first transformed bits to fit in the first cell portion. Then, without erasing a second cell portion that includes the first portion, if respective levels of the cells of the second portion, that represent a second plurality of transformed bits obtained by a second transformation of the second input bits, according to the mapping, are accessible from the current cell levels, the second portion is so programmed to store the second transformed bits.
    • 为了顺次地在多个存储单元中存储数量相等的第一和第二多个输入位,第一变换将第一输入位变换为第一多个变换位。 单元的第一部分被编程为根据位序列到单元级别的映射来存储第一变换的位,但是如果第一变换具有可变的输出长度,则只有当足够少的第一变换位适合于 第一细胞部分。 然后,在不擦除包括第一部分的第二单元部分的情况下,如果根据映射通过第二输入位的第二变换获得的表示第二多个变换位的第二部分的单元的各个级别是 从当前单元级可访问,第二部分被编程为存储第二转换位。