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    • 3. 发明申请
    • MIMICKING MULTI-VOLTAGE DOMAIN WORDLINE DECODING LOGIC FOR A MEMORY ARRAY
    • 用于存储阵列的多电平域域字线解码逻辑
    • WO2013109680A1
    • 2013-07-25
    • PCT/US2013/021824
    • 2013-01-17
    • QUALCOMM INCORPORATED
    • GE, ShaopingCHAI, ChiamingLILES, Stephen E.NGUYEN, Lam V.FISCHER, Jeffrey Herbert
    • G11C8/08G11C8/10G11C7/22
    • G11C8/08G11C7/12G11C7/22G11C7/227G11C8/10
    • Systems and methods for adaptively mimicking word line decoding logic for multi-voltage domain memory are disclosed. In one embodiment, the multi-voltage domain memory includes a memory array implemented in a high voltage domain and a multi-voltage domain control circuit. The multi-voltage domain control circuit includes multi-voltage domain decoding logic that generates a word line select signal for the memory array and a multi-voltage domain mimic logic that mimics the multi-voltage domain decoding logic to generate a dummy wordline signal. In one embodiment, the dummy word line signal is utilized to trigger an ending edge (e.g., a falling edge) of the word line select signal once the word line is asserted. In addition or alternatively, the dummy word line signal is utilized to generate one or more control signals for the memory array such as, for example, a pre-charge control signal and/or a sense amplifier enable signal.
    • 公开了用于自适应模拟用于多电压域存储器的字线解码逻辑的系统和方法。 在一个实施例中,多电压域存储器包括以高电压域实现的存储器阵列和多电压域控制电路。 多电压域控制电路包括产生用于存储器阵列的字线选择信号的多电压域解码逻辑和模拟多电压域解码逻辑以产生伪字线信号的多电压域模拟逻辑。 在一个实施例中,一旦该字线被断言,该虚拟字线信号用于触发字线选择信号的结束边缘(例如,下降沿)。 另外或替代地,伪字线信号用于产生用于存储器阵列的一个或多个控制信号,例如预充电控制信号和/或读出放大器使能信号。