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    • 7. 发明申请
    • MULTI-FUNCTIONAL CHALCOGENIDE ELECTRONIC DEVICES HAVING GAIN
    • 具有增益功能的多功能卡尔加河电子设备
    • WO2007139793A2
    • 2007-12-06
    • PCT/US2007/012188
    • 2007-05-21
    • ENERGY CONVERSION DEVICES, INC.OVSHINSKY, Stanford, R.
    • OVSHINSKY, Stanford, R.
    • H01L29/06H01L31/00
    • H01L29/0665B82Y10/00H01L29/0673H01L29/0676H01L29/1029H01L29/18H01L29/802H01L31/0324H01L31/08H01L45/06H01L45/10H01L45/1206H01L45/1233H01L45/141
    • Multi-functional electronic switching and current control device comprising a chalcogeπide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to function in one or more of the following modes reversibly: (1) a gain mode in which gain is induced in the current passing between the load and reference terminals; (2) a conductivity modulation mode in which the conductivity of the chalcogenide material between the load and reference terminals is modulated; (3) a current modulation mode in which the current or current density. between the load and reference terminals is modulated; and/or (4) a threshold modulation mode in which the voltage required to switch the chalcogenide material between the load and reference terminals from a resistive state to a conductive state is modulated. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
    • 多功能电子开关和电流控制装置,其包括计数数位元素材料。 这些设备包括负载端子,参考端子和控制端子。 将控制信号施加到控制终端允许装置在以下模式中的一个或多个模式下可逆地运行:(1)增益模式,其中在负载和参考端之间通过的电流中感生增益; (2)调制负载和参考端子之间的硫族化物材料的电导率的电导率调制模式; (3)电流或电流密度的电流调制模式。 在负载和参考端之间进行调制; 和/或(4)阈值调制模式,其中将负载和参考端子之间的硫族化物材料从电阻状态切换到导通状态所需的电压被调制。 这些设备可以用作电路和网络中的互连设备或信号提供设备。
    • 10. 发明申请
    • ERROR REDUCTION CIRCUIT FOR CHALCOGENIDE DEVICES
    • 纠错装置的错误减少电路
    • WO2006091484A2
    • 2006-08-31
    • PCT/US2006/005635
    • 2006-02-17
    • ENERGY CONVERSION DEVICES, INC.OVSHINSKY, Stanford, R.COHEN, Morrel, H.
    • OVSHINSKY, Stanford, R.COHEN, Morrel, H.
    • G11C11/34
    • G11C13/0004
    • An error reduction circuit for use in arrays of chalcogenide memory and computing devices. The error reduction circuit reduces the error associated with the output response of chalcogenide devices. In a preferred embodiment, the output response is resistance and the error reduction circuit reduces errors or fluctuations in the resistance. The error reduction circuit includes a network of chalcogenide devices, each of which is nominally equivalent and each of which is programmed into the same state having the same nominal resistance. The inclusion of multiple devices in the network of the instant error reduction circuit provides for a reduction in the contributions of both dynamic fluctuations and manufacturing fluctuations to the error in the output response.
    • 用于硫族化物存储器和计算设备阵列的误差减少电路。 误差降低电路减少与硫族化物器件的输出响应相关的误差。 在优选实施例中,输出响应是电阻,并且误差减小电路减小电阻的误差或波动。 误差减小电路包括一个硫族化物器件网络,其中每个器件名义上是等效的,并且每个都被编程成具有相同标称电阻的相同状态。 在瞬时误差减少电路的网络中包含多个设备提供了动态波动和制造波动对输出响应误差的贡献的降低。