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1. 发明申请

WO2007118440A3 OPTOELECTRONIC SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：光电半导体器件
公开(公告)号：WO2007118440A3
公开(公告)日：2008-03-20
申请号：PCT/DE2007000473
申请日：2007-03-15
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LUTGEN STEPHAN , BRICK PETER , ALBRECHT TONY
发明人： LUTGEN STEPHAN , BRICK PETER , ALBRECHT TONY
IPC分类号： H01S5/183 , H01S3/04 , H01S3/108 , H01S5/024 , H01S5/14
CPC分类号： H01S5/18388 , H01S3/108 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/227 , H01S5/4025 , H01S5/4031
摘要： The invention relates to an optoelectronic semiconductor element which comprises a semiconductor base (1) having a surface-emitting vertical emitter zone (2) comprising a vertical emitter layer (3), at least one pump source (4) adapted to optically pump the vertical emitter layer (3), and a radiation exit surface (26) through which the electromagnetic radiation (31) produced in the vertical emitter layer exits the semiconductor base (1), the pump source (4) and the vertical emitter layer (3) being interspaced in the vertical direction.
摘要翻译：它是一种光电子半导体器件，包括：半导体主体（1），包括：表面发射被设置用于光学泵浦所述垂直发射层（3）垂直发射极区域（2）包括：（a垂直发射层（3），至少一个泵源（4），和一个辐射通道面积 26）通过）（半导体本体1）在垂直发射层的电磁辐射（31所产生的热量叶指示，其中，所述泵浦源（4）和在垂直方向上的垂直发射层（3）间隔开。

2. 发明申请

WO2008000243A3 SURFACE EMITTING SEMICONDUCTOR BODY WITH VERTICAL EMISSION DIRECTION AND STABILISED EMISSION WAVELENGTH 审中-公开
标题翻译：具有垂直发射方向与REGULATED发射波长的面发光半导体BODY
公开(公告)号：WO2008000243A3
公开(公告)日：2008-12-04
申请号：PCT/DE2007001148
申请日：2007-06-28
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BRICK PETER , DIEHL WOLFGANG , LUTGEN STEPHAN
发明人： BRICK PETER , DIEHL WOLFGANG , LUTGEN STEPHAN
IPC分类号： H01S5/183
CPC分类号： H01S5/14 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/068 , H01S5/18358 , H01S5/18383
摘要： A surface emitting semiconductor body with vertical emission direction is disclosed, for use with a resonator and comprising a semiconductor layer sequence with an active region, wherein the semiconductor body has a wavelength stabilising form such that a peak wavelength of the radiation generated in the active region in a given operating range for the semiconductor body is stabilised against changes in output power of the radiation generated in the active region.
摘要翻译：提供了一种表面发射半导体本体具有垂直发射方向，这提供了一种用于操作具有谐振器和包括具有有源区，其中，在形成在半导体本体中的半导体层序列这样的波长稳定，即在一个预定的在有源区中产生的辐射的峰值波长在半导体本体的运行范围是稳定的对在有源区中产生的辐射的输出功率的变化。

3. 发明申请

WO2005117070A3 SURFACE-EMITTING SEMICONDUCTOR LASER COMPONENT FEATURING EMISSION IN A VERTICAL DIRECTION 审中-公开
标题翻译：具有垂直发射方向表面发光半导体激光元件
公开(公告)号：WO2005117070A3
公开(公告)日：2006-05-11
申请号：PCT/DE2005000791
申请日：2005-04-29
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , STEIN WILHELM , ALBRECHT TONY , BRICK PETER
发明人： STEIN WILHELM , ALBRECHT TONY , BRICK PETER
IPC分类号： H01S5/042 , H01L21/00 , H01S3/109 , H01S5/02 , H01S5/14 , H01S5/183
CPC分类号： H01S5/18394 , H01S3/109 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/141 , H01S5/18355 , H01S5/18386 , H01S2301/18
摘要： Disclosed is a surface-emitting semiconductor laser component, especially an electrically pumped semiconductor laser component, which features emission in a vertical direction and is used for generating laser radiation by means of an external optical resonator (4,5). Said semiconductor laser component comprises a semiconductor element with a sequence (2) of semiconductor layers which is provided with a lateral main direction of extension and an active zone (3) used for generating radiation. A radiation-permeable contact layer (6) is disposed within the resonator and is connected to the semiconductor element in an electrically conducting manner.
摘要翻译：它是一种表面发射半导体激光器元件，特别是电泵浦半导体激光装置，具有垂直发射方向，这是由一个外部光谐振器（4,5）的装置，提供了一种用于激光辐射的产生，包括：具有半导体层序列的半导体主体（2）所示具有延伸的横向主方向和提供用于产生辐射活性区（3）被布置在所述腔内的透射辐射的接触层（6）和电连接到所述半导体基体。

4. 发明申请

WO2011131434A3 SURFACE LIGHT GUIDE AND LUMINAIRE 审中-公开
标题翻译： AREA光纤和光
公开(公告)号：WO2011131434A3
公开(公告)日：2012-01-12
申请号：PCT/EP2011054226
申请日：2011-03-21
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BRICK PETER , MUSCHAWECK JULIUS
发明人： BRICK PETER , MUSCHAWECK JULIUS
IPC分类号： G02B6/00
CPC分类号： G02B6/0041 , G02B6/0035 , G02B6/0046 , G02B6/0061 , G02B6/0068
摘要： In at least one embodiment of the surface light guide (1), the surface light guide comprises at least one scattering element (5) for scattering light, wherein a decoupling coefficient is caused by the scattering element (5). The decoupling coefficient is set in a varying fashion along a main light-guiding direction (z). In a direction (L) perpendicular to the main sides (2) of the surface light guide (1), the opacity value is no more than 0.10, the transmission coefficient is at least 0.75 and the quotient of the minimum light density and maximum light density seen over a continuous emitting area (A) of at least one of the main sides (2) is at least 0.75.
摘要翻译：在引导表面的光的至少一个实施例（1）的该具有至少一个散射装置（5）用于散射光，其特征在于，一个Auskoppelkoeffizient被散射装置引起的（5）。所述Auskoppelkoeffizient设置沿Hauptlichtleitrichtung（z）的变化。在垂直于所述导向面的光的主面（2）的方向（L）（1）是至多0.10的浊度值，至少0.75的透射系数和最小亮度和最大亮度的比，看到在连续发射区域（A 主面）的至少一个（选择2），至少0.75。

5. 发明申请

WO2009080011A2 LASER LIGHT SOURCE 审中-公开
标题翻译：激光光源
公开(公告)号：WO2009080011A2
公开(公告)日：2009-07-02
申请号：PCT/DE2008002123
申请日：2008-12-16
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , REILL WOLFGANG , TAUTZ SOENKE , BRICK PETER , STRAUSS UWE
发明人： REILL WOLFGANG , TAUTZ SOENKE , BRICK PETER , STRAUSS UWE
IPC分类号： H01S5/10 , H01S5/22 , H01S5/40
CPC分类号： H01S5/22 , H01S5/1017 , H01S5/1064 , H01S5/4031
摘要： A laser light source especially comprises a semiconductor layer sequence (10) having an active layer with at least two active zones (45) that are adapted to emit, when operating, electromagnetic radiation via a lateral face of the semiconductor layer sequence (10) along a direction of emission (90), said lateral face being designed as a radiation output surface (12). The laser light source further comprises an electrical contact surface (30) above every of the at least two active zones (45) on a main surface (14) of the semiconductor layer sequence (10) and a surface structure in the main surface (14) of the semiconductor layer sequence (10). The at least two active zones (45) are arranged in the active layer (40) at a right angle to the direction of emission (90) and interspaced from each other. Every electrical contact surface (30) has a first section (31) and a second section (32) which grows wider along the direction of emission (90) towards the radiation output surface (12). The surface structure between the at least two electrical contact surfaces (30) has at least one first recess (6) along the direction of emission (90) and second recesses (7), every first section (31) of the electrical contact surfaces (30) being arranged between at least two second recesses (7).
摘要翻译：特别是激光光源包括与具有至少两个活性区域（45），其能够在所述操作电磁辐射通过一个运行的沿放射方向的半导体层序列（10）的辐射输出（12）侧表面的有源层的半导体层序列（10）（90）辐射，每一个电接触表面（30）在每个所述至少两个有源区（45）上的半导体层序列（10）和在该半导体层序列（10）的主表面（14）的表面结构的一个主表面（14），其中所述至少两种活性区域（45）横向于所述活性层（40）彼此间隔开的辐射（90）的方向布置，每个所述电接触表面（30）的第一部分（31）和具有沿辐射方向延伸的第二部分（32）（90）朝着辐射输出表面（12）朝着增加的宽度d移动他所述至少两个电接触表面之间的表面结构（30）至少一个第一凹槽（6）沿辐射（90），第二凹部的方向和（7），并在至少两个第二之间分别电接触区（30）的所述第一子区域（31）井（7）被安排。

6. 发明申请

WO2011037570A8 LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管和制造发光二极管的方法
公开(公告)号：WO2011037570A8
公开(公告)日：2011-06-23
申请号：PCT/US2009058305
申请日：2009-09-25
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , NGUYEN FRANCIS , MCNATT JOHN , BRICK PETER , WEBER-RABSILBER SVEN
发明人： NGUYEN FRANCIS , MCNATT JOHN , BRICK PETER , WEBER-RABSILBER SVEN
IPC分类号： G09G3/32
CPC分类号： H05B33/0851 , G09G3/3406 , G09G2320/041 , G09G2320/0633 , G09G2320/064 , G09G2360/145 , H05B33/0824 , H05B33/089
摘要： A light-emitting diode includes at least one light-emitting diode chip, at least one control device, wherein each of the light-emitting diode chips is electrically connected to one of said at least one control devices, each of said at least one control devices comprises a data storage device in which brightness data for each light- emitting diode chip which is connected to said control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for said light erniturig-diode chip.
摘要翻译：发光二极管包括至少一个发光二极管芯片，至少一个控制装置，其中每个发光二极管芯片电连接到所述至少一个控制装置中的一个，所述至少一个控制装置设备包括数据存储装置，在该数据存储装置中存储与所述控制装置连接的每个发光二极管芯片的亮度数据，并且控制装置以根据存储的亮度数据选择的电流驱动连接的发光二极管芯片用于所述发光二极管芯片。

7. 发明申请

WO2009039808A3 METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT 审中-公开
标题翻译：用于生产辐射发光元件和辐射分量
公开(公告)号：WO2009039808A3
公开(公告)日：2009-10-15
申请号：PCT/DE2008001377
申请日：2008-08-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BRICK PETER
发明人： BRICK PETER
IPC分类号： H01S5/40 , H01S5/00 , H01S5/10 , H01S5/20 , H01S5/22
CPC分类号： H01S5/4043 , H01S5/0035 , H01S5/1064 , H01S5/2004 , H01S5/22 , H01S5/3095 , H01S2301/18 , H01S2301/206
摘要： A method for producing a radiation-emitting component (1) is provided. A radiation characteristic in the far field is specified. From the predetermined radiation characteristic a refractive index profile is determined for the radiation-emitting component (1) in a direction extending perpendicular to a primary radiation direction of the component. A design for the component is determined such that the component has the previously determined refractive index profile. The component (1) is configured in accordance to the previously determined design. Furthermore, a radiation-emitting component is provided.
摘要翻译：提供了一种制造发射辐射的元件（1）的方法。在远场中的辐射被设置。从预定辐射图案，所述辐射发射元件（1）的折射率分布是在沿垂直于部件的方向的主发射方向确定。被确定用于所述部件的结构，使得组件具有先前确定的折射率分布。组分（1）被形成在按照预定的结构。此外，发射辐射的元件被指定。

8. 发明申请

WO2010048921A2 LUMINESCENT DIODE CHIP 审中-公开
标题翻译： LED芯片
公开(公告)号：WO2010048921A2
公开(公告)日：2010-05-06
申请号：PCT/DE2009001436
申请日：2009-10-16
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BRICK PETER , LUCKNER HAGEN , SABATHIL MATTHIAS
发明人： BRICK PETER , LUCKNER HAGEN , SABATHIL MATTHIAS
IPC分类号： H01L33/38
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： A luminescent diode chip is disclosed which comprises a series of semiconductor layers, including an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer that touches and contacts the series of semiconductor layers in an electrically conducting manner. The first electrical connection layer touches and contacts the series of semiconductor layers especially by means of a plurality of contact surfaces. Said luminescent diode chip specifically has a non-homogeneous current density distribution or current distribution in the series of semiconductor layers as a result of a non-homogeneous distribution of a mass per unit area of the contact surfaces along a main direction in which the series of semiconductors extends.
摘要翻译：本发明提供一种LED芯片。这包括半导体层序列，其包括适合于产生电磁辐射有源层的装置，并且第一电连接层，其接触半导体层序列和导电接触。第一电连接层接触并且接触半导体层序列，尤其是具有多个接触表面。在LED芯片中，半导体层序列中的不均匀的电流密度分布或电流分布选择性地被接触面的表面密度的沿着半导体层序列的主延伸平面的不均匀分布调整。

9. 发明申请

WO2009082999A3 EDGE-EMITTING SEMICONDUCTOR LASER CHIP HAVING A STRUCTURED CONTACT STRIP 审中-公开
标题翻译：边缘发射半导体激光器芯片具有结构化STRIP
公开(公告)号：WO2009082999A3
公开(公告)日：2009-12-03
申请号：PCT/DE2008002131
申请日：2008-12-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , KOENIG HARALD , LAUER CHRISTIAN , BRICK PETER , SCHMID WOLFGANG , FEHSE ROBIN , STRAUSS UWE
发明人： KOENIG HARALD , LAUER CHRISTIAN , BRICK PETER , SCHMID WOLFGANG , FEHSE ROBIN , STRAUSS UWE
IPC分类号： H01S5/042 , H01S5/16 , H01S5/20 , H01S5/40
CPC分类号： H01S5/0425 , H01S5/0421 , H01S5/1053 , H01S5/16 , H01S5/162 , H01S5/2036 , H01S5/3095 , H01S5/4031 , H01S2301/206
摘要： The invention specifies an edge-emitting semiconductor laser chip having - an active zone (14) in which electromagnetic radiation is produced during operation of the semiconductor laser chip (1) and - at least one structured contact strip (2) which is structured in such a manner that charge carrier injection into the active zone (14) decreases towards a side of the semiconductor laser chip (1) on which a coupling-out facet (3) of the semiconductor laser chip (1) is situated.
摘要翻译：提供了一种边发射的半导体激光器芯片，其具有 - 一个有源区（14），其中，所述半导体激光器芯片的操作过程中产生的（1）电磁辐射，和 - 至少一个图案化的接触带（2），其被构造为使得载流子注入到有源区（14），以在半导体激光器芯片（1）的一个侧减小朝在其中输出小面（3）的半导体激光器芯片（1）。

10. 发明申请

WO2014095921A3 LIGHTING DEVICE 审中-公开
标题翻译：照明灯装置，
公开(公告)号：WO2014095921A3
公开(公告)日：2014-11-27
申请号：PCT/EP2013076974
申请日：2013-12-17
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： BRICK PETER , KUNZ THORSTEN
IPC分类号： F21V8/00
CPC分类号： G02B6/0078 , G02B6/0055
摘要： A lighting device (100) is specified, comprising - a housing (1) having a light exit surface (2), - a light-emitting semiconductor component (10), and - an optical waveguide (20) having a first end face (21), a second end face (22) situated opposite the first end face (21), and a lateral surface (23) connecting the first and second end faces (21, 22), wherein the first and/or the second end face (21, 22) are/is embodied at least in places as a light entrance surface (24), - the light-emitting semiconductor component (10) and the optical waveguide (20) are arranged within the housing (1), - the light-emitting semiconductor component (10) during operation emits light (5) which largely enters into the optical waveguide (20) through the light entrance surface (24) of the optical waveguide (20), - the light (5) in the optical waveguide (20) at least partly emerges through the lateral surface (23) of the optical waveguide (20), and - the light (5) that has emerged through the lateral surface (23) leaves the housing (1) through the light exit surface (2) of the housing (1).
摘要翻译：它是设置有发光器件（100）， - 一个外壳（1），具有光出射面（2）， - 发光半导体器件（10），以及 - 光导（20），其具有第一端面（21），所述第一端面之一（ 21）相对的第二端面（22）和第一和第二端面（21,22），其连接侧表面（23），其特征在于，形成第一和/或第二端面（21，22）至少在某些地方（作为光入射面24）， - 发光半导体器件（10）和所述壳体（1）内的光导体（20）布置， - 在工作光（5）辐射，所述发光半导体装置（10），其（对于通过光导20的光入射面（24）在大多数情况下）进入到光导（20）， - 所述光（5）在所述光导（10）至少部分地由所述光导体的圆周表面（23）（20）出现，以及 - （由周向表面23）ausgetret 烯的光（5）的壳体（1）离开通过光出射面（2）的壳体（1）。

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