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1. 发明申请

WO2016117327A1 PROCESSING APPARATUS, PROCESSING METHOD AND METHOD OF MANUFACTURING COMPONENT 审中-公开
标题翻译：加工装置，加工方法及制造方法
公开(公告)号：WO2016117327A1
公开(公告)日：2016-07-28
申请号：PCT/JP2016/000236
申请日：2016-01-19
申请人： OSAKA UNIVERSITY , CANON KABUSHIKI KAISHA
发明人： SADAKUNI, Shun , MIYAUCHI, Hiroki , ANDO, Manabu , YAMAUCHI, Kazuto
IPC分类号： B23K20/10 , B24B7/24
CPC分类号： B24B37/046 , C03C15/00
摘要： A processing apparatus includes: a tool in which a processing surface includes a catalyst material including a transition metal that assists hydrolysis of a surface to be processed of an object to be processed that is immersed in water; and a control unit that controls a relative distance between the surface to be processed of the object and the processing surface of the tool with respect to a direction including a surface normal direction of the surface to be processed; wherein the surface to be processed is processed by performing, by the control unit, catalytic reaction control that alternately generates: a first state in which the surface to be processed and the processing surface do not contact; and a second state in which the surface to be processed and the processing surface contact, or approach each other to a distance at which a catalytic reaction becomes effective.
摘要翻译：一种加工设备，包括：工具，其中处理表面包括催化剂材料，所述催化剂材料包括助熔剂浸入水中的待处理物体的待处理表面的水解的过渡金属; 以及控制单元，其相对于包括待处理表面的法线方向的方向，控制被处理物体与工件的处理面之间的相对距离; 其中通过所述控制单元执行交替产生：待处理表面和所述处理表面不接触的第一状态的催化反应控制来处理待处理的表面; 以及第二状态，其中待处理表面和加工表面接触，或彼此接近到催化反应生效的距离。

2. 发明申请

WO2016132715A1 PROCESSING APPARATUS, PROCESSING METHOD, AND COMPONENT MANUFACTURING METHOD 审中-公开
标题翻译：加工设备，加工方法和组件制造方法
公开(公告)号：WO2016132715A1
公开(公告)日：2016-08-25
申请号：PCT/JP2016/000716
申请日：2016-02-12
申请人： OSAKA UNIVERSITY , CANON KABUSHIKI KAISHA
发明人： MIYAUCHI, Hiroki , ANDO, Manabu , SADAKUNI, Shun , YAMAUCHI, Kazuto
IPC分类号： B23K20/02 , C03C19/00 , B01J31/28
CPC分类号： C03C15/02 , B24B13/06 , B24B49/006 , B24B49/16
摘要： A workpiece and a tool whose processing surface includes a catalyst substance containing a transition metal which supports hydrolysis of a surface to be processed of the workpiece are relatively moved in a state of being press-contacted by a processing pressure with a water molecule of a processing fluid being interposed. During the processing, processing control of managing a relative speed of relatively moving the processing surface and the surface to be processed or the processing pressure is performed by a control unit. A processing rate of the surface to be processed is estimated by an estimation expression indicated by a difference between a member formed of a product of a first constant, the processing pressure and the relative speed and a member formed of a product of a second constant and a cube of the relative speed. Then, the relative speed is managed based on the estimated processing rate.
摘要翻译：工件和工具，其处理表面包括含有过渡金属的催化剂物质，该催化剂物质支持待加工表面的水解，所述过渡金属在加工压力的状态下通过处理压力与加工水分分压相接触流体被插入。在处理中，通过控制单元进行管理相对移动处理用面和待处理面的相对速度的处理控制或处理压力。要处理的表面的处理速率由由第一常数，处理压力和相对速度的乘积形成的部件之间的差指示的估计表达式以及由第二常数和相对速度的立方体。然后，基于估计的处理速率来管理相对速度。

3. 发明申请

WO2011074691A1 POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL 审中-公开
标题翻译：抛光方法，抛光装置和抛光工具
公开(公告)号：WO2011074691A1
公开(公告)日：2011-06-23
申请号：PCT/JP2010/072837
申请日：2010-12-14
申请人： OSAKA UNIVERSITY , EBARA CORPORATION , SANO, Yasuhisa , YAMAUCHI, Kazuto , MURATA, Junji , OKAMOTO, Takeshi , SADAKUNI, Shun , YAGI, Keita
发明人： SANO, Yasuhisa , YAMAUCHI, Kazuto , MURATA, Junji , OKAMOTO, Takeshi , SADAKUNI, Shun , YAGI, Keita
IPC分类号： H01L21/304 , B24B37/00 , B24B49/12 , H01L21/306
CPC分类号： H01L21/32125 , B24B37/0053 , B24B37/042 , B24B37/10 , B24B37/30 , B24B49/12 , H01L21/02024
摘要： A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).
摘要翻译：一种抛光方法和抛光装置，特别适用于将包含诸如Ga等的元素的化合物半导体的基板的表面整理到期望的平坦度，使得含有元素的化合物半导体的基板的表面的Ga可以在实际的处理时间内以高表面精度平坦化。在存在水（232）如弱酸水，溶于其中的空气的水或电解离子水的存在下，由包含Ga，Al和In中的任一个的化合物半导体制成的基板（142）的表面和在与基板（142）保持接触的表面的区域中具有导电构件（264）的抛光垫（242）的表面相对移动，同时保持彼此接触，从而抛光表面衬底（142）。

4. 发明申请

WO2010110463A1 POLISHING METHOD, POLISHING APPARATUS AND GaN WAFER 审中-公开
标题翻译：抛光方法，抛光装置和GaN波长
公开(公告)号：WO2010110463A1
公开(公告)日：2010-09-30
申请号：PCT/JP2010/055484
申请日：2010-03-19
申请人： OSAKA UNIVERSITY , EBARA CORPORATION , SANO, Yasuhisa , YAMAUCHI, Kazuto , MURATA, Junji , SADAKUNI, Shun , YAGI, Keita
发明人： SANO, Yasuhisa , YAMAUCHI, Kazuto , MURATA, Junji , SADAKUNI, Shun , YAGI, Keita
IPC分类号： H01L21/304 , B24B37/00
CPC分类号： B24B37/0056
摘要： A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.
摘要翻译：抛光方法可以在实际的加工时间和高的表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。抛光方法包括：在包含含有Ga离子的中性pH缓冲溶液的处理溶液（14）的存在下，使含Ga元素的化合物半导体衬底（16）与抛光工具（10）接触; 用光照射衬底的表面或向衬底施加偏置电位，或者在用衬底照射衬底表面的同时向衬底施加偏置电位，从而在衬底的表面上形成Ga氧化物（16a）; 同时相对于彼此移动衬底和抛光工具以抛光和去除形成在衬底的表面上的Ga氧化物。

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