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    • 4. 发明申请
    • ELECTROCHEMICAL POTENTIOMETRIC SENSING WITHOUT REFERENCE ELECTRODE
    • 无参考电极的电化学电位感测
    • WO2010023611A1
    • 2010-03-04
    • PCT/IB2009/053710
    • 2009-08-24
    • NXP B.V.MERZ, MatthiasPONOMAREV, Youri, V.CURATOLA, Gilberto
    • MERZ, MatthiasPONOMAREV, Youri, V.CURATOLA, Gilberto
    • G01N27/403G01N27/333G01N27/414
    • G01N27/4148G01N27/4145
    • The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET’s and EIS capacitors.
    • 本发明涉及一种测定分析物(100)中带电粒子浓度的方法,所述方法包括以下步骤:i)确定表面电位对界面温度曲线(c1,c2,c3,c3)的至少两个测量点, c4),其中界面温度是从第一离子敏感介质(Fsd)和分析物(100)之间的第一界面与第二离子敏感介质(Ssd)和分析物之间的第二界面 (100),并且其中所述表面电位由所述第一离子敏感电介质(Fsd)和所述第二离子敏感电介质(Ssd)上的第一电极(Fe)和第二电极(Se)之间的电位差获得, ),和ii)从所述曲线(c1,c2,c3,c4)的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器,即EGFET和EIS电容器。
    • 5. 发明申请
    • APPARATUS AND METHOD FOR MOLECULE DETECTION USING NANOPORES
    • 使用纳米分子检测的装置和方法
    • WO2010020912A1
    • 2010-02-25
    • PCT/IB2009/053560
    • 2009-08-12
    • NXP B.V.MERZ, Matthias
    • MERZ, Matthias
    • G01N33/487H01L23/498
    • G01N33/48721H01L2924/0002H01L2924/00
    • A detector device : a source region (S), a drain region (D) and a gate contact (100) on a substrate (104), with a channel region between the source and drain regions (S, D), an insulator layer over the substrate, comprising vias (140, 142, 144) filled with conductor material, wherein the vias (140, 142, 144) are provided over the source, drain regions and a gate contact, an additional via (152) through the insulator layer, defining a first chamber leading to a first side of the channel region, a nanopore etched from this first chamber through the channel region, and connecting the first chamber to a second chamber, a drive means (60) for providing a voltage bias between the two chambers, a drive means for providing a voltage between the source and drain regions and gate, a current sensor (64) for sensing a charge flow between the source and the drain regions.
    • 检测器装置:在源极和漏极区域(S,D)之间具有沟道区域的衬底(104)上的源极区(S),漏极区(D)和栅极接触(100),绝缘体层 在衬底上,包括填充有导体材料的通孔(140,142,144),其中通孔(140,142,144)设置在源极,漏极区域和栅极接触之上,通过绝缘体的附加通孔(152) 层,限定通向通道区域的第一侧的第一室,从该第一室通过沟道区蚀刻的纳米孔,以及将第一室连接到第二室;驱动装置(60),用于在 两个腔室,用于在源极和漏极区域和栅极之间提供电压的驱动装置,用于感测源极和漏极区域之间的电荷流的电流传感器(64)。
    • 6. 发明申请
    • CHIP INTEGRATED ION SENSOR
    • 芯片集成离子传感器
    • WO2010001277A1
    • 2010-01-07
    • PCT/IB2009/052072
    • 2009-05-19
    • NXP B.V.MERZ, Matthias
    • MERZ, Matthias
    • G01N27/414
    • G01N27/227
    • A chip integrated ion sensor is provided, which comprises a substrate having arranged thereon an electrolyte insulator semiconductor structure and a reference electrode. In particular, the electrolyte insulator semiconductor (EIS) structure may be formed on a chip already processed, i.e. the EIS structure may be formed in a Back End process on an already formed chip comprising a plurality of formed electronic components. In particular, the ion sensor may be adapted to form an ion concentration sensor, e.g. a pH sensor, i.e. may form a pH sensor. The reference electrode may be a non-polarizable electrode. In particular, the reference electrode may comprise Ag or AgCl as material.
    • 提供一种芯片集成离子传感器,其包括其上布置有电解质绝缘体半导体结构和参考电极的基板。 特别地,可以在已经处理的芯片上形成电解绝缘体半导体(EIS)结构,即EIS结构可以在已经形成的包括多个形成的电子部件的芯片的后端工艺中形成。 特别地,离子传感器可以适于形成离子浓度传感器,例如, pH传感器,即可形成pH传感器。 参考电极可以是非极化电极。 特别地,参考电极可以包括Ag或AgCl作为材料。
    • 8. 发明申请
    • SENSOR HAS COMBINED IN-PLANE AND PARALLEL-PLANE CONFIGURATION
    • 传感器组合在平面和平行平面配置中
    • WO2010029507A1
    • 2010-03-18
    • PCT/IB2009/053959
    • 2009-09-10
    • NXP B.V.HUMBERT, AurelieMERZ, Matthias
    • HUMBERT, AurelieMERZ, Matthias
    • G01N27/02G01N27/22
    • G01N27/223
    • A sensor senses a magnitude of a physical parameter of the sensor's environment. The sensor has first and second electrodes, and a material layer between them. The material has an electrical property, e.g., capacitance or resistance, whose value depends on the magnitude of the physical parameter. The first electrode is formed in a first layer, and the second electrode is formed in a second layer, different from the first layer. The first layer has a trench and an elevation next to the trench. The trench has a bottom wall and a side wall. The material is positioned on the bottom wall and on the side wall and on top of the elevation. The trench accommodates at least a part of the second electrode. The second electrode leaves exposed the material formed on top of the elevation.
    • 传感器感测传感器环境的物理参数的大小。 传感器具有第一和第二电极以及它们之间的材料层。 该材料具有电性能,例如电容或电阻,其值取决于物理参数的大小。 第一电极形成在第一层中,并且第二电极形成在与第一层不同的第二层中。 第一层在沟槽旁边具有沟槽和高度。 沟槽具有底壁和侧壁。 材料位于底壁和侧壁上以及高度的顶部。 沟槽容纳至少一部分第二电极。 第二个电极离开了形成在高程顶部的材料。
    • 9. 发明申请
    • ELECTROCHEMICAL POTENTIOMETRIC SENSING
    • 电化学电位感测
    • WO2010023610A1
    • 2010-03-04
    • PCT/IB2009/053709
    • 2009-08-24
    • NXP B.V.MERZ, Matthias
    • MERZ, Matthias
    • G01N27/333G01N27/414
    • G01N27/4148G01N27/4145
    • The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is defined as a temperature of the interface between a measurement electrode and the analyte (100), wherein the surface-potential is defined at the interface, and ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4).This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of a measurement electrode. The invention further provides an electrochemical sensor and electrochemical sensor system for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.
    • 本发明涉及一种测定分析物(100)中带电粒子浓度的方法,所述方法包括以下步骤:i)确定表面电位对界面温度曲线(c1,c2,c3,c3)的至少两个测量点, c4),其中所述界面温度定义为测量电极和所述分析物(100)之间的界面的温度,其中所述界面处限定所述表面电位,以及ii)从所述界面处的位置计算所述带电粒子浓度 所述曲线(c1,c2,c3,c4)的至少两个测量点。仍然是电位电化学测量的该方法利用测量电极的表面电位的温度依赖性。 本发明还提供了用于确定分析物中带电粒子浓度的电化学传感器和电化学传感器系统。 本发明还提供可用于确定带电粒子浓度的各种传感器,即EGFET和EIS电容器。