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    • 1. 发明申请
    • PLANAR THERMOPILE INFRARED MICROSENSOR
    • 平面热像红外微型传感器
    • WO2010029488A1
    • 2010-03-18
    • PCT/IB2009/053896
    • 2009-09-07
    • NXP B.V.BOUTCHICH, MohamedBATAILLOU, Benoit
    • BOUTCHICH, MohamedBATAILLOU, Benoit
    • G01J5/12
    • G01J5/12G01J5/022G01J5/0806G01J5/0815G01J5/0853
    • An IR sensor comprises a heat sink substrate (10) having portions (12) of relatively high thermal conductivity and portions (14) of relatively low thermal conductivity and a planar thermocouple layer (16) having a hot junction (18) and a cold junction (20), with the hot junction (18) located on a portion (14) of the heat sink substrate with relatively low thermal conductivity. A low thermal conductivity dielectric layer (22) is provided over the thermocouple layer (16), and has a via (24) leading to the hot junction (18). An IR reflector layer (26) covers the low thermal conductivity dielectric layer (22) and the side walls of the via (24). An IR absorber (30; 30') is within the via. This structure forms a planar IR microsensor which uses a structured substrate and a dielectric layer to avoid the need for any specific packaging. This design provides a higher sensitivity by providing a focus on the thermocouple, and also gives better immunity to gas conduction and convection.
    • IR传感器包括散热基板(10),散热基板(10)具有相对较高导热率的部分(12)和具有相对较低导热率的部分(14)和具有热接点(18)的平面热电偶层(16) (20),热接头(18)位于散热器衬底的一部分(14)上,导热系数相对较低。 在热电偶层(16)之上提供低导热介电层(22),并且具有通向热连接点(18)的通孔(24)。 IR反射器层(26)覆盖低导热介电层(22)和通孔(24)的侧壁。 IR吸收器(30; 30')在通孔内。 该结构形成平面的IR微传感器,其使用结构化基板和电介质层以避免对任何特定封装的需要。 该设计通过提供对热电偶的关注而提供更高的灵敏度,并且还对气体传导和对流提供更好的抗扰性。
    • 2. 发明申请
    • INTEGRATED CIRCUIT MANUFACTURING METHOD
    • 集成电路制造方法
    • WO2009128022A1
    • 2009-10-22
    • PCT/IB2009/051546
    • 2009-04-14
    • NXP B.V.NGUYEN HOANG, VietSURDEANU, RaduBATAILLOU, Benoit
    • NGUYEN HOANG, VietSURDEANU, RaduBATAILLOU, Benoit
    • H01L27/146
    • H01L27/14685H01L21/31053H01L21/31111H01L27/14621H01L27/14629
    • A method of providing a dielectric material (18) having regions (18', 18") with a varying thickness in an IC manufacturing process is disclosed. The method comprises forming a plurality of patterns in respective regions (20', 20") of the dielectric material (18), each pattern increasing the susceptibility of the dielectric material (18) to a dielectric material removal step by a predefined amount and exposing the dielectric material (18) to the dielectric material removal step. In an embodiment, the IC comprises a plurality of pixilated elements (12) and a plurality of light interference elements (24), each comprising a first mirror element (16) and a second mirror element (22), a region of the dielectric material (18) separating the first mirror element (16) and the second element (22), and each being arranged over one of said pixilated elements (12), the method further comprising forming the respective first mirror elements (16) in a dielectric layer (14) over a substrate (10) comprising the plurality of pixilated elements; depositing the dielectric material over the dielectric layer; and forming the respective second mirror elements such that each second mirror element is separated from a respective first mirror element by a region of the exposed dielectric material. Hence, an IC having a layer of a dielectric material (18) comprising regions of different thicknesses can be obtained requiring only a few process steps.
    • 公开了一种在IC制造工艺中提供具有变化厚度的区域(18',18“)的介电材料(18)的方法,该方法包括在各个区域(20',20”)中形成多个图案, 电介质材料(18),每个图案将介电材料(18)的敏感性增加到电介质材料去除步骤预定量并且将电介质材料(18)暴露于电介质材料去除步骤。 在一个实施例中,IC包括多个像素化元件(12)和多个光干涉元件(24),每个元件包括第一镜元件(16)和第二镜元件(22),介电材料的区域 (18)分离第一镜元件(16)和第二元件(22),并且每个被布置在一个所述像素化元件(12)上,所述方法还包括在电介质层中形成相应的第一镜元件(16) (14)包括多个像素化元件的衬底(10)上; 在电介质层上沉积电介质材料; 以及形成各个第二反射镜元件,使得每个第二反射镜元件通过暴露的电介质材料的区域与相应的第一反射镜元件分离。 因此,可以获得具有包括不同厚度的区域的电介质材料层(18)的IC,只需要几个工艺步骤。