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1. 发明申请

WO2012158347A3 SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 审中-公开
标题翻译：旋转转矩记忆细胞结构和方法
公开(公告)号：WO2012158347A3
公开(公告)日：2013-01-10
申请号：PCT/US2012036083
申请日：2012-05-02
申请人： MICRON TECHNOLOGY INC , LIU JUN , SANDHU GURTEJ S
发明人： LIU JUN , SANDHU GURTEJ S
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C11/16 , G11C11/161 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.
摘要翻译：本文描述了旋转转矩传递（STT）存储单元结构和方法。一个或多个STT存储器单元结构包括在第一铁磁材料和第二铁磁材料之间包括非磁性材料的环形STT堆叠和围绕环形STT堆叠的至少一部分的软磁材料。

2. 发明申请

WO2012036728A2 SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 审中-公开
标题翻译：自旋转矩传递记忆细胞结构与方法
公开(公告)号：WO2012036728A2
公开(公告)日：2012-03-22
申请号：PCT/US2011001573
申请日：2011-09-13
申请人： MICRON TECHNOLOGY INC , KRAMER STEPHEN J , SANDHU GURTEJ S
发明人： KRAMER STEPHEN J , SANDHU GURTEJ S
IPC分类号： G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.
摘要翻译：自旋转矩传输（STT）存储器单元结构和方法在本文中描述。一个或多个STT存储器单元结构包括位于铁磁存储材料和与反铁磁材料接触的钉扎铁磁材料和与铁磁存储材料接触的多铁性材料之间的钉扎铁磁材料之间的隧穿势垒材料，其中反铁磁材料，铁磁存储材料并且钉扎铁磁材料位于第一电极和第二电极之间。

3. 发明申请

WO2010059451A3 SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME 审中-公开
标题翻译：包括开放体积的选择装置，包括该体积的存储器装置和系统以及形成该装置的方法
公开(公告)号：WO2010059451A3
公开(公告)日：2010-08-26
申请号：PCT/US2009063761
申请日：2009-11-09
申请人： MICRON TECHNOLOGY INC , SRINIVASAN BHASKAR , SANDHU GURTEJ S
发明人： SRINIVASAN BHASKAR , SANDHU GURTEJ S
IPC分类号： H01L29/861
CPC分类号： H01L29/88 , H01L21/3205 , H01L27/1021 , Y10S438/957
摘要： Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select device may comprise, for example, a metal insulator insulator metal (MIIM) device. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
摘要翻译：公开了包括用作具有低介电常数的高带隙材料的开放体积的器件。开放体积可以在选择器件中提供更加非线性的非对称I-V曲线和增强的整流行为。选择装置可以包括例如金属绝缘体绝缘金属（MIIM）装置。可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。存储器设备和电子系统包括这种选择设备。

4. 发明申请

WO2007127496A8 TOPOGRAPHY DIRECTED PATTERNING 审中-公开
标题翻译：地形指导图案
公开(公告)号：WO2007127496A8
公开(公告)日：2010-08-19
申请号：PCT/US2007011524
申请日：2007-05-14
申请人： MICRON TECHNOLOGY INC , SANDHU GURTEJ S
发明人： SANDHU GURTEJ S
IPC分类号： B82B3/00 , H01L21/033 , H01L21/308
CPC分类号： H01L21/3081 , G03F7/0002 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , Y10T428/24058 , Y10T428/2995
摘要： A pattern having exceptionally small features is formed on a partially fabricated integrated circuit (102) during integrated circuit fabrication. The pattern comprises features (162), (164) formed by self-organizing material, such as diblock copolymers. The organization of the copolymers is directed by spacers (152) which have been formed by a pitch multiplication process in which the spacers (152) are formed at the sides of sacrificial mandrels (142), which are later removed to leave the spaced-apart, free-standing spacers (152). Diblock copolymers, composed of two immiscible block species, are deposited over and in the space between the spacers (152). The copolymers are made to self-organize, with each block species aggregating with other block species of the same type.
摘要翻译：在集成电路制造期间，在部分制造的集成电路（102）上形成具有特别小特征的图案。图案包括由自组织材料形成的特征（162），（164），例如二嵌段共聚物。共聚物的组织由间隔物（152）引导，间隔物（152）已经通过间距倍增过程形成，其中间隔物（152）形成在牺牲心轴（142）的侧面，后者被去除以离开间隔开，独立式间隔件（152）。由两个不混溶的嵌段物质组成的二嵌段共聚物沉积在间隔物（152）之上和之间的空间中。使共聚物自组织，每个嵌段物质与相同类型的其它嵌段物种聚集。

5. 发明申请

WO2010065252A3 METHODS OF FABRICATING SUBSTRATES 审中-公开
标题翻译：制作基板的方法
公开(公告)号：WO2010065252A3
公开(公告)日：2010-08-12
申请号：PCT/US2009064004
申请日：2009-11-11
申请人： MICRON TECHNOLOGY INC , SILLS SCOTT , SANDHU GURTEJ S , DEVILLIERS ANTON
发明人： SILLS SCOTT , SANDHU GURTEJ S , DEVILLIERS ANTON
IPC分类号： H01L21/027 , H01L21/20 , H01L21/302
CPC分类号： H01L21/3088 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/31138
摘要： A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成间隔开的第一特征。可变材料沉积在间隔开的第一特征上，并且可变材料用来自间隔开的第一特征的材料改变以在间隔开的第一特征的侧壁上形成改变的材料。第一种材料沉积在改变的材料上，并且与改变的材料的组成不同。蚀刻第一材料以暴露改变的材料，并且包含第一材料的间隔开的第二特征形成在改变的材料的侧壁上。然后，从间隔开的第二特征和间隔开的第一特征之间蚀刻改变的材料。通过包括间隔开的第一特征和间隔开的第二特征的掩模图案来处理衬底。公开了其它实施例。

6. 发明申请

WO2009154886A3 DIODES, AND METHODS OF FORMING DIODES 审中-公开
标题翻译：二极体和形成二极体的方法
公开(公告)号：WO2009154886A3
公开(公告)日：2010-02-18
申请号：PCT/US2009042540
申请日：2009-05-01
申请人： MICRON TECHNOLOGY INC , SANDHU GURTEJ S , SRINIVASAN BHASKAR
发明人： SANDHU GURTEJ S , SRINIVASAN BHASKAR
IPC分类号： H01L29/861
CPC分类号： H01L45/00 , Y10S257/91 , Y10S438/90 , Y10S438/902 , Y10S438/983
摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要翻译：一些实施例包括形成二极管的方法。所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。在一些实施方案中，所述方法可包括在导电电极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。在一些实施例中，所述方法可包括在导电电极上形成金属卤化物层。一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

7. 发明申请

WO2008045202A3 METHOD TO DEPOSIT CONFORMAL LOW TEMPERATURE SIO2 审中-公开
标题翻译：沉积一致的低温SIO2的方法
公开(公告)号：WO2008045202A3
公开(公告)日：2009-03-05
申请号：PCT/US2007020687
申请日：2007-09-25
申请人： MICRON TECHNOLOGY INC , SMYTHE JOHN A , SANDHU GURTEJ S , COPPA BRIAN J , SURTHI SHYAM , MENG SHUANG
发明人： SMYTHE JOHN A , SANDHU GURTEJ S , COPPA BRIAN J , SURTHI SHYAM , MENG SHUANG
IPC分类号： H01L21/314 , H01L21/033 , H01L21/308 , H01L21/316
CPC分类号： H01L21/3088 , H01L21/02164 , H01L21/02211 , H01L21/0228 , H01L21/3086 , H01L21/3141 , H01L21/31612
摘要： Methods of controlling critical dimensions of reduced-sized features during semiconductor fabrication through pitch multiplication are disclosed. Pitch multiplication is accomplished by patterning mask structures via conventional photoresist techniques and subsequently transferring the pattern to a sacrificial material. Spacer regions are then formed on the vertical surfaces of the transferred pattern following the deposition of a conformal material via atomic layer deposition. The spacer regions, and therefore the reduced features, are then transferred to a semiconductor substrate.
摘要翻译：公开了通过间距倍增来控制半导体制造期间尺寸减小的特征的关键尺寸的方法。间距倍增通过通过常规光致抗蚀剂技术图案化掩模结构并随后将图案转移到牺牲材料来实现。然后通过原子层沉积沉积保形材料之后，在转印图案的垂直表面上形成间隔区。然后将间隔区域以及因此减小的特征转移到半导体衬底。

8. 发明申请

WO2008019039A3 MEMORY CELL WITH NANODOTS AS CHARGE STORAGE ELEMENTS AND CORRESPONDING MANUFACTURING METHOD 审中-公开
标题翻译：具有纳米电极的存储单元作为充电存储元件和相应的制造方法
公开(公告)号：WO2008019039A3
公开(公告)日：2008-09-12
申请号：PCT/US2007017297
申请日：2007-08-02
申请人： MICRON TECHNOLOGY INC , PRALL KIRK D , SANDHU GURTEJ S
发明人： PRALL KIRK D , SANDHU GURTEJ S
IPC分类号： H01L21/28 , H01L29/423
CPC分类号： H01L21/28273 , B82Y10/00 , H01L29/42332
摘要： A method of fabricating a memory cell including forming nanodots (106) over a first dielectric layer (104) and forming an intergate dielectric layer (110) over the nanodots, where the intergate dielectric layer encases the nanodots. To form sidewalls of the memory cell, a portion of the intergate dielectric layer is removed with a dry etch, where the sidewalls include a location where a nanodot has been deposited. A spacing layer (120) is formed over the sidewalls to cover the location where a nanodot has been deposited and the remaining portion of the intergate dielectric layer and the nanodots can be removed with an etch selective to the intergate dielectric layer. The spacing layer can fill hollows or voids (119) where a nanodot has been removed at the sidewall, thereby preventing the loss of data retention in the cell.
摘要翻译：一种制造存储单元的方法，包括在第一介电层（104）上形成纳米点（106），并在纳米点上形成隔间介电层（110），其中隔间电介质层封装在纳米点上。为了形成存储器单元的侧壁，隔离介电层的一部分用干蚀刻去除，其中侧壁包括已经沉积纳米点的位置。间隔层（120）形成在侧壁上以覆盖其中已经沉积纳米点的位置，并且间隙电介质层和纳米点的剩余部分可以用对栅极间介电层的选择性蚀刻去除。间隔层可以填充中空或空隙（119），其中已经在侧壁处去除了纳米点，从而防止了电池中数据保留的损失。

9. 发明申请

WO2008008157A3 ELECTRON INDUCED CHEMICAL ETCHING FOR DETECTING DEFECTS 审中-公开
标题翻译：电子诱发化学蚀刻检测缺陷
公开(公告)号：WO2008008157A3
公开(公告)日：2008-05-29
申请号：PCT/US2007014446
申请日：2007-06-21
申请人： MICRON TECHNOLOGY INC , WILLIAMSON MARK J , JOHNSON PAUL M , LYONSMITH SHAWN D , SANDHU GURTEJ S , ARRINGTON JUSTIN R
发明人： WILLIAMSON MARK J , JOHNSON PAUL M , LYONSMITH SHAWN D , SANDHU GURTEJ S , ARRINGTON JUSTIN R
IPC分类号： H01L21/66
CPC分类号： G01N1/32
摘要： A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译：描述了成像和识别集成电路表面上的缺陷和污染的方法。该方法可用于直径小于1微米的区域。诸如电子束的高能束被引导至具有在表面上形成的固体，流体或气体反应材料层的选定IC位置。高能束将该区域中的反应性材料分解成化学基团，化学基团优先化学蚀刻表面，或者在高能束周围的局部区域上沉积薄层导电材料。当各种层被选择性地蚀刻以修饰缺陷和/或当各层在局部沉积在高能束周围的区域时可检查表面。可以使用SEM成像和其他分析方法来更容易地识别问题。

10. 发明申请

WO2013015935A3 METHODS OF FORMING GRAPHENE-CONTAINING SWITCHES 审中-公开
标题翻译：形成含石墨开关的方法
公开(公告)号：WO2013015935A3
公开(公告)日：2013-04-18
申请号：PCT/US2012044484
申请日：2012-06-27
申请人： MICRON TECHNOLOGY INC , SANDHU GURTEJ S
发明人： SANDHU GURTEJ S
IPC分类号： H01L27/02
CPC分类号： H01L21/768 , H01L23/525 , H01L23/53276 , H01L29/0665 , H01L29/0676 , H01L29/1606 , H01L29/66022 , H01L29/66742 , H01L29/7788 , H01L29/78642 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming graphene-containing switches. A bottom electrode may be formed over a base, and a first electrically conductive structure may be formed to extend upwardly from the bottom electrode. Dielectric material may be formed along a sidewall of the first electrically conductive structure, while leaving a portion of the bottom electrode exposed. A graphene structure may be formed to be electrically coupled with the exposed portion of the bottom electrode. A second electrically conductive structure may be formed on an opposing side of the graphene structure from the first electrically conductive structure. A top electrode may be formed over the graphene structure and electrically coupled with the second electrically conductive structure. The first and second electrically conductive structures may be configured to provide an electric field across the graphene structure.
摘要翻译：一些实施方案包括形成含石墨烯的开关的方法。底部电极可以形成在基底上，并且第一导电结构可以形成为从底部电极向上延伸。电介质材料可沿着第一导电结构的侧壁形成，同时使底部电极的一部分露出。石墨烯结构可以形成为与底部电极的暴露部分电耦合。可以在石墨烯结构的与第一导电结构相对的一侧上形成第二导电结构。顶部电极可以形成在石墨烯结构之上并与第二导电结构电耦合。第一和第二导电结构可以被配置为提供跨越石墨烯结构的电场。

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