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1. 发明申请

WO2010059451A3 SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME 审中-公开
标题翻译：包括开放体积的选择装置，包括该体积的存储器装置和系统以及形成该装置的方法
公开(公告)号：WO2010059451A3
公开(公告)日：2010-08-26
申请号：PCT/US2009063761
申请日：2009-11-09
申请人： MICRON TECHNOLOGY INC , SRINIVASAN BHASKAR , SANDHU GURTEJ S
发明人： SRINIVASAN BHASKAR , SANDHU GURTEJ S
IPC分类号： H01L29/861
CPC分类号： H01L29/88 , H01L21/3205 , H01L27/1021 , Y10S438/957
摘要： Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select device may comprise, for example, a metal insulator insulator metal (MIIM) device. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
摘要翻译：公开了包括用作具有低介电常数的高带隙材料的开放体积的器件。开放体积可以在选择器件中提供更加非线性的非对称I-V曲线和增强的整流行为。选择装置可以包括例如金属绝缘体绝缘金属（MIIM）装置。可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。存储器设备和电子系统包括这种选择设备。

2. 发明申请

WO2009154886A3 DIODES, AND METHODS OF FORMING DIODES 审中-公开
标题翻译：二极体和形成二极体的方法
公开(公告)号：WO2009154886A3
公开(公告)日：2010-02-18
申请号：PCT/US2009042540
申请日：2009-05-01
申请人： MICRON TECHNOLOGY INC , SANDHU GURTEJ S , SRINIVASAN BHASKAR
发明人： SANDHU GURTEJ S , SRINIVASAN BHASKAR
IPC分类号： H01L29/861
CPC分类号： H01L45/00 , Y10S257/91 , Y10S438/90 , Y10S438/902 , Y10S438/983
摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要翻译：一些实施例包括形成二极管的方法。所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。在一些实施方案中，所述方法可包括在导电电极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。在一些实施例中，所述方法可包括在导电电极上形成金属卤化物层。一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

3. 发明申请

WO2011037703A3 METHODS OF READING AND USING MEMORY CELLS 审中-公开
标题翻译：阅读和使用记忆细胞的方法
公开(公告)号：WO2011037703A3
公开(公告)日：2011-06-09
申请号：PCT/US2010045856
申请日：2010-08-18
申请人： MICRON TECHNOLOGY INC , SRINIVASAN BHASKAR , SANDHU GURTEJ S
发明人： SRINIVASAN BHASKAR , SANDHU GURTEJ S
IPC分类号： G11C16/26 , G11C16/10 , G11C16/32
CPC分类号： G11C13/004 , G11C13/0002 , G11C13/0007 , G11C13/0061 , G11C2013/0052 , G11C2213/72
摘要： Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.
摘要翻译：一些实施例包括读取存储器单元的方法。存储器单元具有写入操作，该写入操作仅在施加足够绝对值的电压持续足够的持续时间时发生; 并且读取过程的持续时间太短而不足以进行写入操作。在一些实施例中，用于读取的脉冲可具有大于或等于用于写入操作的电压的绝对值。在一些实施例中，存储器单元可以包括非欧姆器件; 如忆阻器和二极管。

4. 发明申请

WO2010062645A2 METHODS OF FORMING DIODES 审中-公开
标题翻译：形成二极体的方法
公开(公告)号：WO2010062645A2
公开(公告)日：2010-06-03
申请号：PCT/US2009062358
申请日：2009-10-28
申请人： MICRON TECHNOLOGY INC , SANDHU GURTEJ S , SRINIVASAN BHASKAR
发明人： SANDHU GURTEJ S , SRINIVASAN BHASKAR
IPC分类号： H01L29/861
CPC分类号： H01L21/04 , H01L27/1021 , H01L27/2418 , H01L29/1606 , H01L45/00
摘要： Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
摘要翻译：一些实施例包括形成二极管的方法。可以在第一导电材料上形成堆叠。堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一种电介质材料之间留下间隙。在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。然后可以去除整个牺牲材料。

5. 发明申请

WO2012030380A3 MEMORY CELL STRUCTURES AND METHODS 审中-公开
标题翻译：存储单元结构和方法
公开(公告)号：WO2012030380A3
公开(公告)日：2012-05-24
申请号：PCT/US2011001484
申请日：2011-08-24
申请人： MICRON TECHNOLOGY INC , SANDHU GURTEJ S , SRINIVASAN BHASKAR
发明人： SANDHU GURTEJ S , SRINIVASAN BHASKAR
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C16/0416 , G11C16/0483
摘要： Memory cell structures and methods are described herein. One or more memory cells include a transistor having a charge storage node, a dielectric material positioned between the charge storage node and a channel region of the transistor, the channel region positioned between a source region and a drain region, and a first electrode of a diode coupled to the charge storage node.
摘要翻译：本文描述了存储单元结构和方法。一个或多个存储单元包括具有电荷存储节点的晶体管，位于电荷存储节点和晶体管的沟道区之间的电介质材料，位于源区和漏区之间的沟道区，以及位于源区和漏区之间的第一电极耦合到电荷存储节点的二极管。

6. 发明申请

WO2008100691A2 VAPOR DEPOSITION METHODS FOR FORMING A METAL- CONTAINING LAYER ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上形成含金属层的蒸气沉积方法
公开(公告)号：WO2008100691A2
公开(公告)日：2008-08-21
申请号：PCT/US2008052035
申请日：2008-01-25
申请人： MICRON TECHNOLOGY INC , SRINIVASAN BHASKAR , SMYTHE JOHN
发明人： SRINIVASAN BHASKAR , SMYTHE JOHN
IPC分类号： C23C16/40 , C23C16/455 , H01L21/316
CPC分类号： C23C16/405 , C23C16/409 , C23C16/45529 , C23C16/45531 , H01G4/085 , H01G4/1227 , H01L21/3141 , H01L21/31604 , H01L21/31691
摘要： Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
摘要翻译：本文所述的原子层沉积方法可有利地用于在基底上形成含金属的层。例如，如本文所述的某些方法可以形成具有低碳含量（例如低碳酸锶含量）的钛酸锶层，其可导致具有高介电常数的层。

7. 发明申请

WO2008064035B1 METHOD OF FORMING A STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT AND A STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT 审中-公开
标题翻译：形成具有高介电常数的结构和具有高介电常数的结构的方法
公开(公告)号：WO2008064035B1
公开(公告)日：2008-07-17
申请号：PCT/US2007084615
申请日：2007-11-14
申请人： MICRON TECHNOLOGY INC , SRINIVASAN BHASKAR , SMYTHE JOHN A
发明人： SRINIVASAN BHASKAR , SMYTHE JOHN A
IPC分类号： H01G4/12 , H01L21/02 , H01L21/8242
CPC分类号： H01G4/12 , H01G4/1218 , H01L27/10852 , Y10T29/417
摘要： A method of forming a dielectric structure, such as a layer, is disclosed. The method comprises forming a high-k structure from a plurality of portions of a high-k material. Each of the plurality of portions of the high-k material is formed by depositing a plurality of monolayers of the high-k material and annealing the high-k material. The high-k material may be a perovskite-type material including, but not limited to, strontium titanate. A dielectric structure, a capacitor incorporating a dielectric structure and a method of forming a capacitor are also disclosed.
摘要翻译：公开了形成电介质结构例如层的方法。该方法包括由高k材料的多个部分形成高k结构。高-k材料的多个部分中的每一个通过沉积多个高-k材料的单层并退火该高-k材料而形成。高k材料可以是钙钛矿型材料，包括但不限于钛酸锶。还公开了一种介电结构，包含介电结构的电容器和形成电容器的方法。

8. 发明申请

WO2010118109A3 STRONTIUM RUTHENIUM OXIDE INTERFACE 审中-公开
标题翻译：锶氧化铝界面
公开(公告)号：WO2010118109A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030205
申请日：2010-04-07
申请人： MICRON TECHNOLOGY INC , SRINIVASAN BHASKAR , ANTONOV VASSIL , SMYTHE JOHN
发明人： SRINIVASAN BHASKAR , ANTONOV VASSIL , SMYTHE JOHN
IPC分类号： C23C16/00 , C23C16/40 , C23C16/44 , H01L21/205
CPC分类号： H01L28/75 , C23C16/404 , C23C16/409 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02197 , H01L21/022 , H01L21/0228 , H01L28/56 , H01L28/65
摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
摘要翻译：钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

9. 发明申请

WO2010030484A3 METHODS UTILIZING MICROWAVE RADIATION DURING FORMATION OF SEMICONDUCTOR CONSTRUCTIONS 审中-公开
标题翻译：在形成半导体结构过程中利用微波辐射的方法
公开(公告)号：WO2010030484A3
公开(公告)日：2010-05-27
申请号：PCT/US2009054475
申请日：2009-08-20
申请人： MICRON TECHNOLOGY INC , SMYTHE JOHN , SRINIVASAN BHASKAR , ZHANG MING
发明人： SMYTHE JOHN , SRINIVASAN BHASKAR , ZHANG MING
IPC分类号： H01L21/265
CPC分类号： H01L29/66136 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/823425 , H01L21/823814 , H01L27/10873 , H01L27/24 , H01L29/665 , H01L29/6659
摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500°C during the exposure to the microwave radiation.
摘要翻译：一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

10. 发明申请

WO2008088398A3 SYSTEM, METHOD, AND DEVICE FOR CONTROLLED USER TRACKING 审中-公开
标题翻译：用于控制用户跟踪的系统，方法和设备
公开(公告)号：WO2008088398A3
公开(公告)日：2008-10-16
申请号：PCT/US2007019479
申请日：2007-09-07
申请人： BOSCH GMBH ROBERT , KESHAVARZIAN ABTIN , KRUM DAVID , LAL DHANANJAY , SRINIVASAN BHASKAR
发明人： KESHAVARZIAN ABTIN , KRUM DAVID , LAL DHANANJAY , SRINIVASAN BHASKAR
IPC分类号： G07C9/00
CPC分类号： G07C9/00111 , G08B13/19697 , G08B13/2462 , G08B21/0476 , G08B21/0492
摘要： In a system and method for controlled user tracking, a mobile device is provided for transmitting an identification signal, and a reader unit, which is statically located at a location, is provided for receiving the identification signal and transmitting to a surveillance control unit, in response to receipt of the identification signal; either the received identification signal or another signal that identifies the mobile device, for logging by the surveillance control unit of a presence of the mobile device at the location, where the mobile device and/or the reader unit is configured to transmit at least one surveillance control message for control of surveillance at the location.
摘要翻译：在用于受控用户跟踪的系统和方法中，提供了用于发送识别信号的移动设备，并且静态地位于一个位置处的读取器单元被提供用于接收识别信号并传送到监控控制单元响应接收到识别信号; 接收到的识别信号或识别移动设备的另一个信号，用于由监视控制单元记录移动设备在该位置处的存在，其中移动设备和/或读取器单元被配置为传送至少一个监视控制信息，用于控制位置的监控。

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