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1. 发明申请

WO2008020944A3 RESISTIVE MEMORY DEVICE WITH TWO SELECT TRANSISTORS 审中-公开
公开(公告)号：WO2008020944A3
公开(公告)日：2008-02-21
申请号：PCT/US2007/016217
申请日：2007-07-17
申请人： MICRON TECHNOLOGY, INC. , LIU, Jun , HUSH, Glen , VIOLETTE, Mike , INGRAM, Mark
发明人： LIU, Jun , HUSH, Glen , VIOLETTE, Mike , INGRAM, Mark
IPC分类号： G11C16/02 , G11C13/00 , G11C7/22
摘要： A system (10) having a memory cell (60). In certain embodiments, the memory cell (60) includes a resistive memory element (66), an access transistor (68) having a gate, a first terminal, and a second terminal, and a control transistor (70) having a gate, a first terminal, and a second terminal. The first terminal of the access transistor (68) may be coupled to the resistive memory element (66), and the gate of the access transistor (68) may be coupled to the gate of the control transistor (70). Additionally, the first terminal of the control transistor (70) may be coupled to the resistive memory element (66).

2. 发明申请

WO2003077256A2 PROGRAMMABLE CONDUCTOR RANDOM ACCESS MEMORY AND METHOD FOR SENSING SAME 审中-公开
标题翻译：可编程导体随机存取存储器及其传感方法
公开(公告)号：WO2003077256A2
公开(公告)日：2003-09-18
申请号：PCT/US2003/006414
申请日：2003-03-05
申请人： MICRON TECHNOLOGY, INC.
发明人： HUSH, Glen , MOORE, John, T.
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C13/0011 , G11C13/003 , G11C2013/0054 , G11C2213/72 , G11C2213/74
摘要： A sense circuit and method for reading a resistance level of a programmable conductor memory element are provided. All rows and columns in a given memory array are initially held to the same potential. A desired row line is enabled by bringing it to approximately ground. The difference in voltage potential across a diode circuit of a selected cell activates the diodes and initiates current flow through the desired memory element of the desired cell. A column line associated with the cell is discharged from a precharge value through the diode circuit and memory element. The discharging voltage at the column line is compared with a reference voltage. If the voltage at the column line is greater than the reference voltage, then a high resistance level is detected, and, if the column line voltage is less than the reference voltage, a low resistance level is detected.
摘要翻译：提供了用于读取可编程导体存储元件的电阻电平的感测电路和方法。给定内存阵列中的所有行和列最初都保持相同的可能性。通过使所需的行线近似接地来实现。所选择的单元的二极管电路之间的电压差异激活二极管并且启动通过所需单元的所需存储元件的电流。与单元相关联的列线通过二极管电路和存储元件从预充电值放电。将列线处的放电电压与参考电压进行比较。如果列线上的电压大于参考电压，则检测到高电阻电平，并且如果列线电压小于参考电压，则检测到低电阻电平。

3. 发明申请

WO2003071549A1 PROGRAMMABLE CONDUCTOR RANDOM ACCESS MEMORY AND METHOD FOR SENSING SAME 审中-公开
标题翻译：可编程导体随机存取存储器及其传感方法
公开(公告)号：WO2003071549A1
公开(公告)日：2003-08-28
申请号：PCT/US2003/003674
申请日：2003-02-10
申请人： MICRON TECHNOLOGY, INC.
发明人： CASPER, Stephen, L. , DUESMAN, Kevin, G. , HUSH, Glen
IPC分类号： G11C11/34
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0011 , G11C13/004 , G11C2013/0042 , G11C2013/0054 , G11C2013/009 , G11C2213/79
摘要： A sense circuit for reading a resistance level of a programmable conductor random access memory (PCRAM) cell is provided. A voltage potential difference is introduced across a PCRAM cell by activating an access transistor from a raised rowline voltage. Both a digit line and a digit complement reference line are precharged to a first predetermined voltage. The cell being sensed has the precharged voltage discharged through the resistance of the programmable conductor memory element of the PCRAM cell. A comparison is made of the voltage read at the digit line and at the reference conductor. If the voltage at the digit line is greater than the reference voltage, the cell is read as a high resistance value (e.g., logic HIGH); however, if the voltage measured at the digit line is lower than that of the reference voltage, the cell is read as a low resistance value (e.g., logic LOW).
摘要翻译：提供了用于读取可编程导体随机存取存储器PCRAM单元的电阻电平的感测电路。通过从升高的行线电压激活存取晶体管，通过PCRAM单元引入电压电位差。数字线和数位补码参考线都被预充电到第一预定电压。被感测的电池具有通过PCRAM单元的可编程导体存储元件的电阻放电的预充电电压。比较在数字线和参考导体读取的电压。如果数字线上的电压大于参考电压，则将单元读为高电阻值，例如逻辑高电平，但如果在数字线上测量的电压低于参考电压，则读取单元作为低电阻值，例如逻辑低电平。

4. 发明申请

WO2003044802A3 COMPLEMENTARY BIT PCRAM (PROGRAMMABLE CONDUCTOR RAM) AND METHOD OF OPERATION 审中-公开
公开(公告)号：WO2003044802A3
公开(公告)日：2003-05-30
申请号：PCT/US2002/037227
申请日：2002-11-20
申请人： MICRON TECHNOLOGY INC.
发明人： HUSH, Glen , BAKER, Jake
IPC分类号： G11C11/34
摘要： A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.

5. 发明申请

WO2004102577A1 SKEWED SENSE AMP FOR VARIABLE RESISTANCE MEMORY SENSING 审中-公开
标题翻译：用于可变电阻记忆感应器的检测感应器
公开(公告)号：WO2004102577A1
公开(公告)日：2004-11-25
申请号：PCT/US2004/014391
申请日：2004-05-07
申请人： MICRON TECHNOLOGY, INC.
发明人： HUSH, Glen , BAKER, Jacob, R. , MOORE, John
IPC分类号： G11C7/06
CPC分类号： G11C13/00 , G11C7/065 , G11C11/4091 , G11C13/004 , G11C2013/0042 , G11C2013/0054 , G11C2207/2227
摘要： A variable resistance memory sense amplifier has a built-in offset to assist in switching the sense amplifier when a resistive memory cell is in a low resistance state. The built-in offset can be achieved by varying size, threshold voltage, associated capacity or associated resistance of the transistors within the sense amplifier.
摘要翻译：可变电阻存储器读出放大器具有内置偏移量，以在电阻性存储器单元处于低电阻状态时有助于切换读出放大器。可以通过改变读出放大器内的晶体管的尺寸，阈值电压，相关容量或相关电阻来实现内置偏移。

6. 发明申请

WO2003077256A3 PROGRAMMABLE CONDUCTOR RANDOM ACCESS MEMORY AND METHOD FOR SENSING SAME 审中-公开
公开(公告)号：WO2003077256A3
公开(公告)日：2003-09-18
申请号：PCT/US2003/006414
申请日：2003-03-05
申请人： MICRON TECHNOLOGY, INC.
发明人： HUSH, Glen , MOORE, John, T.
IPC分类号： G11C11/34
摘要： A sense circuit and method for reading a resistance level of a programmable conductor memory element are provided. All rows and columns in a given memory array are initially held to the same potential. A desired row line is enabled by bringing it to approximately ground. The difference in voltage potential across a diode circuit of a selected cell activates the diodes and initiates current flow through the desired memory element of the desired cell. A column line associated with the cell is discharged from a precharge value through the diode circuit and memory element. The discharging voltage at the column line is compared with a reference voltage. If the voltage at the column line is greater than the reference voltage, then a high resistance level is detected, and, if the column line voltage is less than the reference voltage, a low resistance level is detected.

7. 发明申请

WO2003054887A1 A PROGRAMMABLE CONDUCTOR RANDOM ACCESS MEMORY AND A METHOD FOR WRITING THERETO 审中-公开
标题翻译：可编程导体随机存取存储器及其写入方法
公开(公告)号：WO2003054887A1
公开(公告)日：2003-07-03
申请号：PCT/US2002/040078
申请日：2002-12-16
申请人： MICRON TECHNOLOGY INC.
发明人： HUSH, Glen
IPC分类号： G11C11/34
CPC分类号： G11C13/0011 , G11C7/12 , G11C13/0026 , G11C13/0069 , G11C2013/009 , G11C2213/79
摘要： The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a first terminal of a chalcogenide memory element. A second terminal of the chalcogenide memory element is selectively coupled to the bit line to produce a voltage across the memory element sufficient to write a predetermined resistance state into the element. The first voltage may take on two different values to program two different resistance states into the memory element.
摘要翻译：本发明提供一种用于写入可编程导体随机存取存储器PCRAM单元的改进的写入电路和方法。该方法包括将位线预充电到第一电压，并向硫族化物存储元件的第一端施加第二电压。硫族化物存储元件的第二端子被选择性地耦合到位线以产生跨过存储器元件的足以将预定电阻状态写入元件的电压。第一电压可以采取两个不同的值来将两个不同的电阻状态编程到存储器元件中。

8. 发明申请

WO2003044802A2 COMPLEMENTARY BIT PCRAM SENSE AMPLIFIER AND METHOD OF OPERATION 审中-公开
标题翻译：补充位PCRAM感应放大器及其操作方法
公开(公告)号：WO2003044802A2
公开(公告)日：2003-05-30
申请号：PCT/US2002/037227
申请日：2002-11-20
申请人： MICRON TECHNOLOGY INC.
发明人： HUSH, Glen , BAKER, Jake
IPC分类号： G11C11/34
CPC分类号： G11C13/0011 , G11C7/062 , G11C11/16 , G11C13/004 , G11C2013/0042 , G11C2213/79
摘要： A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.
摘要翻译：公开了一种用于使用互补PCRAM元件感测可编程导体随机存取存储器（PCRAM）元件的电阻状态的方法和装置，一种保持正被感测的电阻状态，另一种保持互补电阻状态。读出放大器检测通过高电阻和低电阻元件放电的电压，以确定被读取元件的电阻状态。

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