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1. 发明申请

WO2005062885A2 SELECTIVITY CONTROL IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：WO2005062885A2
公开(公告)日：2005-07-14
申请号：PCT/US2004/043115
申请日：2004-12-21
申请人： LAM RESEARCH CORPORATION , TAKESHITA, Kenji , TURMEL, Odette , KOZAKEVICH, Felix , HUDSON, Eric
发明人： TAKESHITA, Kenji , TURMEL, Odette , KOZAKEVICH, Felix , HUDSON, Eric
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76811
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate. The bias RF signal has a bias RF frequency of between about 27 MHz and about 75 MHz and a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold or configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号。偏置RF信号具有在约27MHz至约75MHz之间的偏置RF频率以及被配置为使蚀刻特征被蚀刻的偏压RF功率分量，其中衬底的第二层的蚀刻选择性高于预定义的选择性阈值或者被配置为根据预定的蚀刻速率参数和偏置RF频率下的蚀刻轮廓参数来对特征进行蚀刻。

2. 发明申请

WO2013078098A1 MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM 审中-公开
标题翻译：多区域注气上电极系统
公开(公告)号：WO2013078098A1
公开(公告)日：2013-05-30
申请号：PCT/US2012/065684
申请日：2012-11-16
申请人： LAM RESEARCH CORPORATION , BISE, Ryan , DHINDSA, Rajinder , MARAKHTANOV, Alexei , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D., III , KELLOGG, Mike , DE LA LIERA, Anthony , EHRLICH, Darrell
发明人： BISE, Ryan , DHINDSA, Rajinder , MARAKHTANOV, Alexei , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D., III , KELLOGG, Mike , DE LA LIERA, Anthony , EHRLICH, Darrell
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , H01J37/32495 , H01J37/32541
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
摘要翻译：等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。

3. 发明申请

WO2013036371A3 PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION 审中-公开
公开(公告)号：WO2013036371A3
公开(公告)日：2013-03-14
申请号：PCT/US2012/051460
申请日：2012-08-17
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY, III, Andrew, D.
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY, III, Andrew, D.
IPC分类号： G01R31/00
摘要： Systems, methods, and computer programs for processing a semiconductor substrate in a pulsed plasma chamber in a dual chamber configuration are provided. A wafer processing apparatus with a top chamber and a bottom chamber separated by a plate that fluidly connects the top chamber to the bottom chamber includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller is operable to set the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode in the top chamber. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode in the bottom chamber.

4. 发明申请

WO2013074701A1 SYSTEM, METHOD AND APPARATUS OF A WEDGE-SHAPED PARALLEL PLATE PLASMA REACTOR FOR SUBSTRATE PROCESSING 审中-公开
标题翻译：用于基板处理的楔形平行平板反应器的系统，方法和装置
公开(公告)号：WO2013074701A1
公开(公告)日：2013-05-23
申请号：PCT/US2012/065122
申请日：2012-11-14
申请人： LAM RESEARCH CORPORATION , HUDSON, Eric
发明人： HUDSON, Eric
IPC分类号： C23C16/455
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/32623 , H01J37/32651
摘要： A plasma process chamber includes a top electrode, a bottom electrode disposed opposite the top electrode, the bottom electrode capable of supporting a substrate. The plasma process chamber also includes a plasma containment structure defining a plasma containment region, the plasma containment region being less than an entire surface of the substrate. The plasma containment structure rotates relative to the substrate and wherein the plasma containment region includes a center point of the substrate throughout the rotation of the plasma containment structure relative to the substrate. The plasma containment structure includes multiple gaps. A vacuum source is coupled to the gaps in the plasma containment structure. A method of processing a substrate is also described.
摘要翻译：等离子体处理室包括顶电极，与顶电极相对设置的底电极，能够支撑衬底的底电极。等离子体处理室还包括限定等离子体容纳区域的等离子体容纳结构，等离子体容纳区域小于衬底的整个表面。等离子体容纳结构相对于衬底旋转，并且其中等离子体容纳区域包括在等离子体容纳结构相对于衬底的旋转期间衬底的中心点。等离子体容纳结构包括多个间隙。真空源耦合到等离子体容纳结构中的间隙。还描述了处理衬底的方法。

5. 发明申请

WO2013070472A2 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：WO2013070472A2
公开(公告)日：2013-05-16
申请号：PCT/US2012/062867
申请日：2012-10-31
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY III, Andrew, D.
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY III, Andrew, D.
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

6. 发明申请

WO2010080420A3 METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER 审中-公开
公开(公告)号：WO2010080420A3
公开(公告)日：2010-07-15
申请号：PCT/US2009/068183
申请日：2009-12-16
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , HUDSON, Eric
发明人： FISCHER, Andreas , HUDSON, Eric
IPC分类号： H05H1/34
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

7. 发明申请

WO2008137670A1 HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
标题翻译： HARDMASK打开和调试配置控制与HARDMASK开放
公开(公告)号：WO2008137670A1
公开(公告)日：2008-11-13
申请号：PCT/US2008/062411
申请日：2008-05-02
申请人： LAM RESEARCH CORPORATION , LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
发明人： LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/31122
摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O 2 .
摘要翻译：提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。硬掩模层设置在图案化掩模下方。将基板放置在等离子体处理室中。通过将包括COS成分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体可以进一步包括O 2。

8. 发明申请

WO2008121655A1 METHOD AND APPARATUS FOR DC VOLTAGE CONTROL ON RF-POWERED ELECTRODE 审中-公开
标题翻译： RF电源直流电压控制方法与装置
公开(公告)号：WO2008121655A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/058316
申请日：2008-03-26
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas , MORAVEJ, Maryam
发明人： DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas , MORAVEJ, Maryam
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01L21/205
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源，以及负直流电源通过RF滤波器控制等离子体处理参数。

9. 发明申请

WO2008121654A1 METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE 审中-公开
标题翻译：用于诱导直流电压在电极上的方法和装置
公开(公告)号：WO2008121654A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/058314
申请日：2008-03-26
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
发明人： DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
IPC分类号： H01L21/3065
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.
摘要翻译：公开了一种处理衬底的方法。该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。

10. 发明申请

WO2008082921A1 PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体增强基板加工方法和装置
公开(公告)号：WO2008082921A1
公开(公告)日：2008-07-10
申请号：PCT/US2007/087670
申请日：2007-12-14
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
发明人： DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

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