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1. 发明申请

WO2008109239A1 EDGE ELECTRODES WITH VARIABLE POWER 审中-公开
标题翻译：具有可变功率的边缘电极
公开(公告)号：WO2008109239A1
公开(公告)日：2008-09-12
申请号：PCT/US2008/054025
申请日：2008-02-14
申请人： LAM RESEARCH CORPORATION , SEXTON, Gregory, S. , BAILEY, Andrew, D. , KUTHI, Andras
发明人： SEXTON, Gregory, S. , BAILEY, Andrew, D. , KUTHI, Andras
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的底部电极，其中底部电极耦合到射频（RF）电源。等离子体处理室还包括围绕与底部电极相对的绝缘板的顶部边缘电极。顶边电极电接地。等离子体处理室还包括围绕底部电极的底部边缘电极。底边电极与顶边缘电极相对。上边缘电极，设置在底部电极上的基板和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。底边电极和底电极通过可调谐的RF电路彼此电耦合，以调节在设置在底部电极，底部边缘电极和顶部边缘电极之间的衬底之间的RF电流的量。

2. 发明申请

WO2008097662A1 METHODS OF AND APPARATUS FOR ALIGNING ELECTRODES IN A PROCESS CHAMBER TO PROTECT AN EXCLUSION AREA WITHIN AN EDGE ENVIRON OF A WAFER 审中-公开
标题翻译：用于在过程室中对准电极的方法和装置，以保护在WAFER边缘环境中的排除区域
公开(公告)号：WO2008097662A1
公开(公告)日：2008-08-14
申请号：PCT/US2008/001761
申请日：2008-02-07
申请人： LAM RESEARCH CORPORATION , SEXTON, Gregory, S. , BAILEY III, Andrew D. , SCHOEPP, Alan, M. , BONIFACE, John, D.
发明人： SEXTON, Gregory, S. , BAILEY III, Andrew D. , SCHOEPP, Alan, M. , BONIFACE, John, D.
IPC分类号： H01L21/68
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.
摘要翻译：位置关系建立在一个过程室中。基底配置有下电极表面以支撑晶片，并且上电极具有下表面。安装在基座上的驱动器具有连接到上电极的连杆。放置在下表面上的固定器移动到下电极的期望取向。通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

3. 发明申请

WO2008109240A1 EDGE ELECTRODES WITH DIELECTRIC COVERS 审中-公开
标题翻译：带电介质盖的边缘电极
公开(公告)号：WO2008109240A1
公开(公告)日：2008-09-12
申请号：PCT/US2008/054027
申请日：2008-02-14
申请人： LAM RESEARCH CORPORATION , SEXTON, Gregory, S. , BAILEY, Andrew, D. , KUTHI, Andras , KIM, Yunsang
发明人： SEXTON, Gregory, S. , BAILEY, Andrew, D. , KUTHI, Andras , KIM, Yunsang
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

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