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1. 发明申请

WO2008042578A2 AUTOMATIC DYNAMIC BASELINE CREATION AND ADJUSTMENT 审中-公开
标题翻译：自动动态基线的创建和调整
公开(公告)号：WO2008042578A2
公开(公告)日：2008-04-10
申请号：PCT/US2007/078574
申请日：2007-09-14
申请人： LAM RESEARCH CORPORATION , HUANG, Chung-ho , SETO, Jackie , BRIGHT, Nicolas
发明人： HUANG, Chung-ho , SETO, Jackie , BRIGHT, Nicolas
IPC分类号： G03B27/42
CPC分类号： H01J37/3299 , H01J37/32935
摘要： In a plasma processing system., a method for dynamically establishing a baseline is provided. The method includes processing a first substrate The method also includes collecting a first signal data for the first substrate. The method further includes comparing the first signal data against the baseline The method moreover includes including the first signal data in a recalculation of the baseline if the fust signal data is within a confidence level range, which is in between a top level above the baseline and a bottom level below the baseline.
摘要翻译：在等离子体处理系统中，提供了用于动态建立基线的方法。该方法包括处理第一衬底。该方法还包括收集第一衬底的第一信号数据。该方法还包括将第一信号数据与基线进行比较。该方法还包括如果第四信号数据处于置于基线以上的最高电平和第二信号数据之间的置信水平范围内的基线的重新计算中，底线以下的底部水平。

2. 发明申请

WO2008039809A1 DYNAMIC COMPONENT-TRACKING SYSTEM AND METHODS THEREFOR 审中-公开
标题翻译：动态组件跟踪系统及其方法
公开(公告)号：WO2008039809A1
公开(公告)日：2008-04-03
申请号：PCT/US2007/079471
申请日：2007-09-25
申请人： LAM RESEARCH CORPORATION , HUANG, Chung-ho , JEA, Hae-pyng , HSU, Tung , SETO, Jackie
发明人： HUANG, Chung-ho , JEA, Hae-pyng , HSU, Tung , SETO, Jackie
IPC分类号： H01L21/3065
CPC分类号： G05B19/418 , Y02P90/02 , Y02P90/205 , Y02P90/86 , Y10S707/99943 , Y10S707/99945
摘要： A computer-implemented method for facilitating plasma processing tool component management across plurality of tools is provided. The method includes receiving first component data for first plurality of components, including identification and usage history, at first database associated with first tool. The method also includes receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The method further includes synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools. The method yet also includes obtaining information, using rules and usage history data about given component prior to performing one of replacement, analysis, and maintenance.
摘要翻译：提供了一种用于促进跨多个工具的等离子体处理工具部件管理的计算机实现的方法。该方法包括在与第一工具相关联的第一数据库处接收包括标识和使用历史的第一多个组件的第一组件数据。该方法还包括在与第二工具相关联的第二数据库处接收与第一工具不同的第二多个组件的第二组件数据。该方法还包括将第一和第二组件数据与第三数据库同步。同步包括在第三数据库与管理第一和第二多个组件的至少一个组件的使用的第一和第二数据库规则中的至少一个之间进行同步。第三数据库被耦合以与多个工具交换数据。该方法还包括在执行替换，分析和维护之前获得信息，使用关于给定组件的规则和使用历史数据。

3. 发明申请

WO2008157018A1 MINIMIZATION OF MASK UNDERCUT ON DEEP SILICON ETCH 审中-公开
标题翻译：最小化深层硅蚀刻掩模
公开(公告)号：WO2008157018A1
公开(公告)日：2008-12-24
申请号：PCT/US2008/065578
申请日：2008-06-02
申请人： LAM RESEARCH CORPORATION , PANDHUMSOPORN, Tamarak , CHUNG, Patrick , SETO, Jackie , SADJADI, S.M. Reza
发明人： PANDHUMSOPORN, Tamarak , CHUNG, Patrick , SETO, Jackie , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/3086 , H01L21/31138
摘要： A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising C4F8, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.
摘要翻译：提供了一种在硅层中形成特征的方法。在硅层上形成有多个掩模开口的掩模。通过使包含C4F8的无氢沉积气体从沉积气体形成等离子体，从等离子体沉积聚合物至少20秒，并在至少20秒后停止沉积聚合物，沉积聚合物层。沉积的聚合物层通过流动开口气体而打开，从开口气体形成等离子体，其在多个掩模开口的侧面上相对于沉积的聚合物选择性地去除多个掩模开口的底部上沉积的聚合物，并且停止当多个掩模特征中的至少一些被打开时打开。通过掩模蚀刻硅层并沉积聚合物层。

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