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    • 3. 发明申请
    • SYSTEM AND METHOD FOR INTEGRATED MULTI-USE OPTICAL ALIGNMENT
    • 用于集成多用途光学对准的系统和方法
    • WO2005028994A3
    • 2005-05-19
    • PCT/US2004025517
    • 2004-08-05
    • LAM RES CORPPERRY ANDREWSTEGER ROBERTBENJAMIN NEIL
    • PERRY ANDREWSTEGER ROBERTBENJAMIN NEIL
    • G01C1/00H01L21/68H01L21/00
    • G01C1/00H01J2237/30438H01L21/681
    • An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector in included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.
    • 提供了一种用于半导体处理系统的光学对准系统。 该光学对准系统包括晶片卡盘,该晶片卡盘具有集成在晶片卡盘的顶表面中的对准特征。 另外,能够将光信号发射到对准特征上的光束形成系统设置在晶片卡盘上方。 另外,包括的检测器可以检测发射到对准特征上的光信号的幅度。 在一个方面,对准特征可以是将光信号的一部分反射回光束检测器的反射对准特征。 在另外的方面中,对准特征可以是能够允许一部分光信号通过晶片卡盘到达检测器的透射比对特征。 在这方面,检测器可以设置在晶片卡盘下方。
    • 6. 发明申请
    • TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
    • 可控多区域气体注入系统
    • WO03034463A3
    • 2003-06-19
    • PCT/US0232057
    • 2002-10-09
    • LAM RES CORPCOOPERBERG DAVID JVAHEDI VAHIDRATTO DOUGLASSINGH HARMEETBENJAMIN NEIL
    • COOPERBERG DAVID JVAHEDI VAHIDRATTO DOUGLASSINGH HARMEETBENJAMIN NEIL
    • H05H1/46C23C16/44C23C16/455C23C16/507C23F4/00H01J37/32H01L21/205H01L21/3065C23C16/50
    • C23C16/45574C23C16/507H01J37/321H01J37/3244H01J2237/3323H01J2237/3344
    • A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates (13) such as semiconductor wafers. The system includes a plasma processing chamber (10), a substrate support (16) for supporting a substrate within the processing chamber, a dielectric member (20) having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector (22) fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source (19) such as a planar or non-planar spiral coil (18) which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.
    • 一种用于等离子体处理系统的可调多区域注入系统,用于诸如半导体晶片的衬底(13)的等离子体处理。 该系统包括等离子体处理室(10),用于在处理室内支撑衬底的衬底支撑件(16),具有面向衬底支撑件的内表面的电介质构件(20),该电介质构件形成处理壁 腔室,固定到电介质窗口中的开口的一部分或可移除地安装在介电窗口中的开口中的气体注入器(22),气体注射器包括多个气体出口,其以可调节的流量向腔室的多个区域提供处理气体,并且RF能量 源极(19),例如平面或非平面螺旋线圈(18),其将RF能量通过电介质构件感应耦合并进入腔室,以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口,其以第一流量向中心区域供应处理气体,并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外,与消耗式喷头装置相比,可以更容易且经济地更换可移除安装的气体喷射器。
    • 8. 发明申请
    • INTEGRATED STEERABILITY ARRAY ARRANGEMENT FOR MINIMIZING NON-UNIFORMITY
    • 集成可控性阵列安排,以最小化非均匀性
    • WO2009006147A3
    • 2009-02-19
    • PCT/US2008068144
    • 2008-06-25
    • LAM RES CORPBENJAMIN NEIL
    • BENJAMIN NEIL
    • H01L21/3065
    • H05H1/46C23C16/45563C23C16/505C23C16/509C23C16/52H01J37/32366H01J37/3244H01J37/32449H01J37/32834
    • An integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.
    • 提供了一种用于管理等离子体处理环境中的等离子体均匀性以便于衬底处理的集成可控性阵列布置。 该装置包括一组电气元件。 该布置还包括气体喷射器阵列,其中电气元件阵列和气体喷射器阵列被布置成产生多个等离子体区域,多个等离子体区域中的每个等离子体区域基本相似。 该装置还包括一组泵,其中泵阵列中的单独一个泵散布在电气元件阵列和气体喷射器阵列之间。 泵的阵列被配置为便于局部去除气体排气以在等离子体处理环境内保持均匀的等离子体区域。
    • 9. 发明申请
    • CERAMIC ELECTROSTATIC CHUCK ASSEMBLY AND METHOD OF MAKING
    • 陶瓷静电块组件及其制造方法
    • WO03003449A2
    • 2003-01-09
    • PCT/US0218093
    • 2002-06-10
    • LAM RES CORPNAKAJIMA SHUBENJAMIN NEIL
    • NAKAJIMA SHUBENJAMIN NEIL
    • H01L21/3065H01L21/683H02N13/00H01L21/68
    • H01L21/6833
    • A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.
    • 一种烧结陶瓷静电夹持装置(ESC),其包括嵌入在陶瓷体中的图案化静电夹持电极,其中所述夹持电极包括布置成精细图案的至少一个烧结导电材料条。 由于所使用的电极图案的细度,ESC制造期间引起的应力减小,使得夹紧电极在烧结操作之后保持基本平坦。 所得的ESC允许改进的夹紧均匀性。 另一个ESC包括绝缘或半导电体和具有高电阻率或高横向阻抗的夹持电极。 当RF能量通过来自底层RF电极的钳位电极耦合时,静电夹持装置提供改进的RF耦合均匀性。 RF电极可以是单独的基板,也可以是卡盘的一部分。 ESC可用于支持诸如等离子体处理设备中的半导体晶片的半导体衬底。
    • 10. 发明申请
    • PLASMA PROCESSOR COIL
    • 等离子处理器线圈
    • WO03026364A8
    • 2004-01-15
    • PCT/US0229223
    • 2002-09-16
    • LAM RES CORP
    • BENJAMIN NEILCOOPERBERG DAVID
    • H05H1/46H01J37/32
    • H05H1/46H01J37/321
    • A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.
    • 等离子体处理器线圈可以包括欧姆地或仅反应地耦合到多个多匝,共面,交错的螺旋,并联的绕组的短路匝。 单独的电容器可以与每个绕组相关联以将电流从该绕组的一部分分流到绕组的另一部分。 每个绕组的周边部分的相邻匝之间的间隔可以不同于每个绕组的内部部分的相邻匝间的间隔。 线圈可以具有相对于线圈的RF激励波长短的长度。